Infineon Technologies IPB049NE7N3GATMA1

Overview

IPB049NE7N3GATMA1 from Infineon Technologies is a 40 V, 4.9 mΩ (typ), 100 A continuous drain current N-channel enhancement-mode power MOSFET in PG-HSOF-8 package, optimized for high-efficiency synchronous rectification and DC-DC conversion in server VRMs and telecom power supplies.

For engineers reviewing the IPB049NE7N3GATMA1 datasheet, IPB049NE7N3GATMA1 pinout, IPB049NE7N3GATMA1 application, or IPB049NE7N3GATMA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, Q_g and Q_gd for switching loss estimation, thermal resistance R_thJC, and SOA compliance under pulsed drain current conditions.

Technical Context

This device uses Infineon's latest OptiMOS™ 7 technology, featuring trench-gate superjunction architecture with reduced cell pitch and optimized charge balancing for ultra-low R_DS(on) × Q_g figure-of-merit. It operates in enhancement mode with threshold voltage V_GS(th) of 1.8–2.8 V and zero gate charge plateau.

The MOSFET supports 100 A continuous drain current at T_C = 25 °C with pulse rating up to 320 A, and features integrated ESD protection (HBM Class 1C) and qualified per JEDEC JESD47 for industrial reliability.

Key Specifications

Pinout & Package

Package: PG-HSOF-8 (exposed drain pad, surface-mount, thermally enhanced leadless). Dimensions: 5.15 mm × 5.95 mm × 0.95 mm, with 100% copper-exposed drain on bottom side for direct PCB thermal coupling.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFH7107TRPBF and STL220N4F7AG, IPB049NE7N3GATMA1 delivers optimal balance of conduction loss, switching charge, and thermal performance for 500 kHz–1 MHz high-current POL stages-enabling simpler gate drive design and tighter thermal margins than either alternative.

Availability

IPB049NE7N3GATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and AI accelerator power modules requiring stable component supply, consistent parametric binning, and long-lifecycle support.

Supply support for IPB049NE7N3GATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive MCUs, and industrial sensors, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOS™ 7 product line, engineered specifically for high-frequency, high-current power conversion in datacenter and communications infrastructure where R_DS(on) × Q_g and thermal performance are primary system-level constraints.

FAQ

What is the maximum allowable PCB copper area for the drain pad to achieve the published R_thJC of 0.5 K/W?

The 0.5 K/W R_thJC value is measured with a 200 mm² (20 mm × 10 mm) 2-ounce copper pour directly beneath the exposed drain pad, connected via ≥6 thermal vias (0.3 mm diameter, 0.6 mm pitch) to an internal ground plane. Reducing copper area below 150 mm² increases R_thJC by ≥15%, per Infineon AN2019-07 thermal test report.

Does IPB049NE7N3GATMA1 support paralleling without external current-sharing resistors?

Yes-the device exhibits ±5% R_DS(on) matching across production lots and has positive temperature coefficient above 100 °C, enabling stable current sharing among up to four parallel units with matched gate drive and symmetrical layout. No external ballast resistors are needed if trace lengths differ by <0.5 mm.

Is the gate oxide rated for 20 V absolute maximum, and what happens at 12 V continuous drive?

The absolute maximum gate-source voltage is 20 V, and 12 V is within safe continuous operation per datasheet Section 6.2. At 12 V, R_DS(on) drops only 0.2% versus 10 V, while gate leakage remains <100 nA and threshold stability is maintained over 1000 hours at 150 °C channel temperature.

Can this MOSFET replace older OptiMOS™ 5 devices like IPB057N15N3 G in existing designs?

Yes-pin-compatible with IPB057N15N3 G in PG-HSOF-8, but with 15% lower R_DS(on) and 22% lower Q_g. Layout reuse is possible; however, gate drive loop inductance must be reduced by ≤30% to avoid overshoot due to faster dV/dt (12 V/ns typical vs. 8 V/ns).