Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IPB04N03LA

Part No.:
IPB04N03LA
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIPB04N03LA.pdf
Description:
MOSFET N-CH 25V 80A TO263-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,118

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IPB04N03LA from Infineon Technologies is an N-channel logic-level Power MOSFET in PG-TO263 package, rated for 25 V VDS, 3.9 mΩ RDS(on) (max) at VGS = 10 V, 80 A continuous drain current, and 175 °C operation-designed for high-frequency DC/DC converters in server VRMs and POL modules.

For engineers reviewing the IPB04N03LA datasheet, IPB04N03LA pinout, IPB04N03LA application, or IPB04N03LA equivalent, key selection criteria include gate charge (Qg = 24–32 nC), dv/dt rating (6 kV/µs), thermal resistance (RthJC = 1.4 K/W), and synchronous FET gate drive compatibility (Qg(sync) = 20–27 nC).

Technical Context

This OptiMOS®2 device uses trench-gate superjunction technology to achieve low RDS(on) × Qg figure-of-merit (FOM), enabling high-efficiency switching in hard-switched and synchronous rectifier topologies. Its 1.4 K/W junction-to-case thermal resistance supports high-power density PCB layouts with minimal copper area.

The MOSFET features a fully rated avalanche capability (EAS = 290 mJ), dv/dt immunity up to 6 kV/µs, and gate threshold voltage (VGS(th) = 1.2–2.0 V) optimized for 3.3 V and 5 V logic-level gate drivers-ensuring robust turn-on under low-voltage control conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VDS25 V - Maximum blocking voltage for 12 V input bus applications with margin
RDS(on) max3.9 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 80 A in compact VRM designs
Qg24–32 nC - Determines gate driver power requirement and switching speed in 300–1000 kHz converters
RthJC1.4 K/W - Allows direct heatsink mounting for thermal management without thermal vias
EAS290 mJ - Supports single-pulse inductive energy absorption without failure in non-clamped circuits
dv/dt rating6 kV/µs - Ensures reliable operation in fast-switching synchronous buck converters with steep edge rates
Tj max175 °C - Permits sustained operation in high-ambient industrial and telecom power systems

Pinout & Package

PG-TO263-3 (D²PAK) package with isolated tab (drain-connected), standard 3-pin layout: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (G)Gate terminalLow-impedance control input requiring <32 nC total charge for full enhancement
Pin 2 (D)Drain terminal (exposed tab)Primary high-current path; electrically connected to thermal pad for direct heatsinking
Pin 3 (S)Source terminalReference node for gate drive; carries full load current and reverse diode conduction

Key Features

FeatureDesign Value
Logic-level gate driveOperates fully enhanced at VGS ≥ 4.5 V-compatible with 3.3 V microcontrollers and dedicated POL gate drivers
Low RDS(on) × Qg FOM~100 Ω·nC - balances conduction and switching losses for optimal efficiency at 500 kHz
Enhanced dv/dt immunityRated to 6 kV/µs - prevents spurious turn-on in high-di/dt synchronous rectifier configurations
175 °C rated junctionEnables derating-free operation in sealed enclosures or high-ambient telecom base stations
Integrated body diodeVSD = 0.96–1.2 V @ 80 A - supports bidirectional current in synchronous buck and OR-ing applications

Applications

Server Point-of-Load (POL)Telecom DC/DC Converters

Use Scenario: High-current, high-density 12 V to 1 V conversion for CPU/GPU VRMs in rack-mounted servers.

IC Role / Device Role / Timing Role: Synchronous high-side switch in multiphase buck converter, operating at 500–800 kHz.

Use Value: 3.9 mΩ RDS(on) and 1.4 K/W RthJC enable >94% efficiency at 80 A while maintaining <85 °C case temperature.

Use Scenario: 48 V to 12 V intermediate bus conversion in 5G remote radio units (RRUs).

IC Role / Device Role / Timing Role: Primary switch in active clamp forward or phase-shifted full-bridge topology.

Use Value: 290 mJ EAS and 6 kV/µs dv/dt rating ensure reliability during transient overloads and fast switching transitions.

Industrial Motor DrivesAutomotive ADAS Power Supplies

Use Scenario: Low-voltage (<30 V) H-bridge half-bridge stage for BLDC gate driver auxiliary supplies.

IC Role / Device Role / Timing Role: High-side switch in isolated flyback controller secondary-side synchronous rectification.

Use Value: Logic-level VGS(th) (1.2–2.0 V) ensures clean turn-on with minimal gate drive overhead in space-constrained motor control PCBs.

Use Scenario: 12 V input to 3.3 V/5 V dual-rail supply for radar sensor SoCs and camera ISPs.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in compact 300 kHz flyback converter.

Use Value: Qg(sync) = 20–27 nC and low VSD reduce switching and conduction losses critical for ASIL-B compliant power stages.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRL3803PbFRDS(on) = 4.5 mΩ @ 10 V; Qg = 42 nC; RthJC = 1.7 K/WHigher gate charge increases driver loss and limits max switching frequency to ~300 kHzPreferred where cost sensitivity outweighs efficiency and thermal performance requirements
STL220N3LLH6RDS(on) = 3.0 mΩ @ 10 V; Qg = 48 nC; Tj max = 175 °C; PG-TSDSON8 packageSmaller footprint but higher thermal resistance (RthJC = 2.5 K/W); requires careful PCB thermal designSelected when board space is constrained and thermal vias can be deployed for heat spreading

Compared with IRL3803PbF and STL220N3LLH6, IPB04N03LA delivers superior FOM (RDS(on) × Qg) and lowest junction-to-case thermal resistance-making it optimal for thermally limited, high-frequency POL and telecom DC/DC designs where efficiency and power density are prioritized.

Availability

IPB04N03LA is available at Aetrix Electronics and suitable for server point-of-load regulators, telecom DC/DC converters, and industrial motor drive auxiliary supplies requiring stable component supply and long-term lifecycle support.

Supply support for IPB04N03LA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This device belongs to the OptiMOS®2 family-engineered specifically for high-efficiency, high-frequency DC/DC conversion in server, telecom, and industrial power supplies.

FAQ

Is IPB04N03LA suitable for synchronous rectification in flyback converters?

Yes. With Qg(sync) = 20–27 nC at 0–5 V gate swing and VSD = 0.96–1.2 V at 80 A, it delivers low gate drive loss and reduced conduction loss versus Schottky diodes-enabling >2% efficiency gain in 300 kHz flyback designs operating at 12 V output.

What is the maximum recommended PCB copper area for thermal performance?

The datasheet specifies optimal performance with a 40 mm × 40 mm × 1.5 mm FR4 PCB and 6 cm² cooling area on one layer. Using this layout achieves RthJA = 40 K/W; reducing copper area increases junction temperature proportionally-designs must verify Tj ≤ 175 °C under worst-case load and ambient.

Does IPB04N03LA require a gate resistor for stability?

A gate resistor (typically 2.7 Ω) is recommended per Figure 16 in the datasheet to dampen ringing and control switching speed. This value balances EMI reduction and switching loss-lower values increase dv/dt stress; higher values raise turn-on delay and conduction time in high-frequency operation.

Can IPB04N03LA replace older OptiMOS®1 devices in existing designs?

Yes-pin-compatible with IPB03N03LA and IPB02N03LA in PG-TO263 package. It offers lower RDS(on) (3.9 mΩ vs. 4.5/5.2 mΩ) and improved thermal resistance (1.4 K/W vs. 1.6/1.8 K/W), enabling direct drop-in upgrades that reduce conduction loss by up to 15% without layout changes.

IPB04N03LA Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
25 V
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
3.9mOhm @ 55A, 10V
Vgs(th) (Max) @ Id:
2V @ 60µA
Gate Charge (Qg) (Max) @ Vgs:
32 nC @ 5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3877 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
107W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO263-3-2

IPB04N03LA FAQ

1.How can I place an order for IPB04N03LA through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB04N03LA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB04N03LA reliable?

The price and inventory of IPB04N03LA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB04N03LA is usually 5 days.

3.What payment methods are accepted for IPB04N03LA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB04N03LA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB04N03LA?

IPB04N03LA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB04N03LA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB04N03LA?

For technical support, including IPB04N03LA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB04N03LA requirements.

6.How does Aetrix verify that IPB04N03LA is sourced from the original manufacturer or authorized distributors?

All IPB04N03LA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB04N03LA meets industry standards.

7.What is the process for return or replacement of IPB04N03LA?

All IPB04N03LA units undergo pre-shipment inspection (PSI). If there is an issue with IPB04N03LA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB04N03LA part is unused and in its original packaging.

Return procedure for IPB04N03LA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPB04N03LA Tags

  • IPB04N03LA
  • IPB04N03LA PDF
  • IPB04N03LA Datasheet
  • IPB04N03LA Specifications
  • IPB04N03LA Images
  • Infineon Technologies
  • Infineon Technologies IPB04N03LA
  • Buy IPB04N03LA
  • IPB04N03LA Price
  • IPB04N03LA Distributor
  • IPB04N03LA Supplier
  • IPB04N03LA Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER