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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB04N03LAT

Name: IPB04N03LAT
Brand: Infineon Technologies
SKU: IPB04N03LAT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB04N03LAT

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB04N03LAT.pdf

Description:: MOSFET N-CH 25V 80A TO263-3

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Product details

Overview

IPB04N03LAT from Infineon Technologies is an N-channel logic-level OptiMOS®2 power MOSFET in PG-TO263 package, rated for 25 V V_DS, 3.9 mΩ R_DS(on) (max) at V_GS = 10 V, 80 A continuous drain current, and 175 °C operation-designed for high-frequency DC/DC converters in server VRMs and POL modules.

For engineers reviewing the IPB04N03LAT datasheet, IPB04N03LAT pinout, IPB04N03LAT application, or IPB04N03LAT equivalent, key selection criteria include its low gate charge × R_DS(on) figure of merit (FOM), dv/dt ruggedness (6 kV/µs), and thermal resistance (R_thJC = 1.4 K/W), critical for compact, high-efficiency synchronous buck stages.

Technical Context

This device employs a trench-based silicon MOSFET structure optimized for low conduction and switching losses. Its gate threshold voltage (1.2–2.0 V typ.) enables direct drive from 3.3 V or 5 V logic, while the 24–32 nC total gate charge supports fast turn-on/turn-off with minimal driver loss.

The integrated body diode exhibits low reverse recovery charge (Q_rr ≤ 15 nC) and forward voltage (V_SD ≤ 1.2 V at 80 A), making it suitable as a synchronous rectifier in high-current, high-frequency topologies where reverse recovery stress must be minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - maximum blocking voltage for 12 V input rail applications with margin
R_DS(on) max	3.9 mΩ at V_GS = 10 V - enables <1 W conduction loss at 80 A in PCB-mounted configuration
I_D cont.	80 A at T_C = 25 °C - supported by low R_thJC (1.4 K/W) and robust bondwire construction
Q_g total	24–32 nC - determines gate driver power and switching speed in 300–1000 kHz converters
dv/dt rating	6 kV/µs - ensures reliable operation under fast transient voltage slew without false turn-on
T_j max	175 °C - allows sustained operation in thermally constrained server and telecom power stages
Q_rr	≤15 nC - reduces switching loss and EMI in synchronous rectification mode

Pinout & Package

PG-TO263-3 package (also known as TO-263AB or D2PAK), surface-mount, single-die layout with exposed drain pad for thermal enhancement. Pin 1: Gate; Pin 2: Drain (tab); Pin 3: Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Low-impedance control input; requires <32 nC charge to fully enhance; compatible with 3.3 V/5 V drivers
Pin 2 (D)	Drain terminal (exposed tab)	Primary high-side or low-side switch node; electrically connected to thermal pad for direct PCB heat sinking
Pin 3 (S)	Source terminal	Reference node for gate drive; carries full load current and forms return path for body diode conduction

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V-eliminates need for gate boosters in 5 V control systems
Low FOM (Q_g × R_DS(on))	~125 nC·mΩ typical-directly improves efficiency in high-frequency synchronous buck converters
dv/dt ruggedness	6 kV/µs rated-prevents parasitic turn-on during hard-switching transients in multiphase VRMs
175 °C junction rating	Enables derating headroom in sealed enclosures or high-ambient telecom base stations
Pb-free & RoHS compliant	Meets industrial and datacom environmental compliance requirements without lead-based solder concerns

Applications

Server VRM Phase Legs

Telecom DC/DC Converters

Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage (0.8–1.2 V @ >200 A).

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in interleaved phase leg, switching at 500–800 kHz.

Use Value: 3.9 mΩ R_DS(on) and 15 nC Q_rr reduce conduction + recovery losses, improving full-load efficiency by ~0.8% vs. legacy MOSFETs.

Use Scenario: 48 V to 12 V intermediate bus converter in wireless base station power shelf.

IC Role / Device Role / Timing Role: Primary switch in active-clamp forward or LLC resonant topology operating up to 1 MHz.

Use Value: 6 kV/µs dv/dt rating prevents false triggering during fast ZVS transitions, enhancing reliability in high-noise RF environments.

Industrial PLC Power Supplies

Automotive ADAS Domain Controllers

Use Scenario: 24 V input, 3.3/5/12 V output isolated flyback or forward converter for I/O module regulation.

IC Role / Device Role / Timing Role: Primary-side switch handling 10–20 A peak current with tight thermal constraints on dense PCBs.

Use Value: R_thJC = 1.4 K/W enables direct heatsinking to copper pour, reducing need for external thermal interface materials.

Use Scenario: 12 V input, 1.8/3.3/5 V point-of-load regulator for radar processor and camera SoCs.

IC Role / Device Role / Timing Role: High-efficiency synchronous buck stage operating at 1.2 MHz with strict automotive temperature cycling (−40 to 125 °C ambient).

Use Value: 175 °C T_j,max and JEDEC-qualified construction ensure long-term stability under repeated thermal shock in ADAS ECUs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PbF	R_DS(on) = 4.5 mΩ (max), Q_g = 34 nC, V_DS = 30 V, TO-220 package	Higher R_DS(on) and gate charge; through-hole mounting limits high-frequency layout density	Preferred only when through-hole assembly or higher V_DS margin is required
STL220N3LLH6	R_DS(on) = 3.0 mΩ (typ), Q_g = 41 nC, V_DS = 30 V, PowerFLAT 5x6	Lower R_DS(on) but higher Q_g; smaller footprint lacks thermal mass for >60 A continuous use	Better for space-constrained designs below 60 A; less suitable for sustained 80 A server loads

Compared with IRL3803PbF and STL220N3LLH6, IPB04N03LAT delivers optimal balance of ultra-low R_DS(on), moderate gate charge, and robust thermal packaging-making it the preferred choice for high-current, high-frequency synchronous rectification where thermal management and dv/dt immunity are critical.

Availability

IPB04N03LAT is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, and industrial PLC power supplies requiring stable component supply, JEDEC-qualified reliability, and long-lifecycle availability.

Supply support for IPB04N03LAT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification standards.

The OptiMOS®2 product line targets high-efficiency, high-frequency power conversion-specifically engineered for server, telecom, and industrial DC/DC applications demanding low R_DS(on), fast switching, and rugged thermal performance.

FAQ

Is IPB04N03LAT suitable for synchronous rectification in a 1 MHz buck converter?

Yes. With R_DS(on) ≤ 3.9 mΩ, Q_rr ≤ 15 nC, and 6 kV/µs dv/dt rating, it supports efficient synchronous rectification at 1 MHz. Its low gate charge (24–32 nC) enables fast switching with standard 1–2 A gate drivers, and the PG-TO263 package provides adequate thermal dissipation for continuous 60–80 A operation when properly mounted.

What is the maximum recommended gate resistor for driving IPB04N03LAT at 600 kHz?

A gate resistor of 2.2–3.3 Ω is recommended for 600 kHz operation. This value balances switching speed (t_r/t_f ≈ 5–7 ns) against gate driver stress and EMI. Lower values (<1.5 Ω) risk excessive peak gate current (>3 A), while higher values (>5 Ω) increase switching losses beyond acceptable levels for high-frequency POL designs.

Does IPB04N03LAT require a negative gate turn-off voltage to prevent shoot-through?

No. Its gate threshold voltage (1.2–2.0 V) and low Miller capacitance (C_rss = 175–263 pF) allow clean turn-off with 0 V gate drive. Negative bias is unnecessary in well-designed gate-drive layouts with matched propagation delays and adequate dead time (≥50 ns), as confirmed by Infineon's application notes for OptiMOS®2 in synchronous buck stages.

Can IPB04N03LAT replace IPB04N03LA in existing designs?

Yes-IPB04N03LAT is the tape-and-reel variant of IPB04N03LA, sharing identical electrical specifications, thermal characteristics, and mechanical outline. The "T" suffix denotes packaging format only; no parameter or performance differences exist between the two part numbers per Infineon's datasheet Rev. 1.7.

IPB04N03LAT Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.9mOhm @ 55A, 10V

Vgs(th) (Max) @ Id:: 2V @ 60µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3877 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 107W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB04N03LAT FAQ

1.How can I place an order for IPB04N03LAT through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB04N03LAT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB04N03LAT reliable?

The price and inventory of IPB04N03LAT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB04N03LAT is usually 5 days.

3.What payment methods are accepted for IPB04N03LAT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB04N03LAT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB04N03LAT?

IPB04N03LAT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB04N03LAT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB04N03LAT?

For technical support, including IPB04N03LAT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB04N03LAT requirements.

6.How does Aetrix verify that IPB04N03LAT is sourced from the original manufacturer or authorized distributors?

All IPB04N03LAT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB04N03LAT meets industry standards.

7.What is the process for return or replacement of IPB04N03LAT?

All IPB04N03LAT units undergo pre-shipment inspection (PSI). If there is an issue with IPB04N03LAT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB04N03LAT part is unused and in its original packaging.

Return procedure for IPB04N03LAT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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