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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB04N03LB

Name: IPB04N03LB
Brand: Infineon Technologies
SKU: IPB04N03LB
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB04N03LB

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB04N03LB.pdf

Description:: MOSFET N-CH 30V 80A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPB04N03LB from Infineon Technologies is an N-channel logic-level OptiMOS®2 power MOSFET in PG-TO263-3 (D²PAK) package, rated for 30 V V_DS, 80 A continuous drain current at T_C = 100 °C, and 3.5 mΩ max R_DS(on) at V_GS = 10 V. It delivers high-efficiency switching in synchronous buck converters for server VRMs and telecom DC/DC modules.

For engineers reviewing the IPB04N03LB datasheet, IPB04N03LB pinout, IPB04N03LB application, or IPB04N03LB equivalent, key selection criteria include its 30 V rating, 3.5 mΩ on-resistance, 175 °C junction temperature capability, dv/dt ruggedness (6 kV/µs), and gate charge profile optimized for high-frequency operation up to 1 MHz.

Technical Context

This MOSFET employs a trench-based silicon process enabling low R_DS(on) × Q_g figure-of-merit (FOM) of ~105 mΩ·nC (typ.), supporting high-efficiency synchronous rectification. Its gate threshold voltage (1.2–2.0 V typ.) ensures reliable turn-on with 3.3 V or 5 V logic drivers.

Thermally, it features 1.4 K/W junction-to-case resistance and is qualified per JEDEC standards for industrial and telecom power stages. The integrated body diode exhibits low V_SD (0.92–1.2 V) and minimal Q_rr (≤10 nC), reducing reverse recovery losses in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V input bus applications
R_DS(on) max	3.5 mΩ @ V_GS = 10 V - Enables <1.4 W conduction loss at 60 A
I_D cont.	80 A @ T_C = 100 °C - Supports high-current output stages without derating
Q_g total	30–40 nC - Low gate drive energy enables efficient 500 kHz–1 MHz switching
dv/dt rating	6 kV/µs - Ensures robustness against parasitic ringing in fast-switching converters
T_j max	175 °C - Allows operation in thermally constrained environments like sealed telecom modules
Q_rr	≤10 nC - Minimizes reverse recovery loss and EMI in synchronous FET position

Pinout & Package

IPB04N03LB uses the PG-TO263-3 (D²PAK) surface-mount package with exposed drain pad for thermal enhancement. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Low-threshold input requiring ≤2.0 V to turn on; connects to PWM controller gate driver
Pin 2 (D)	Drain terminal (exposed tab)	Main high-side or low-side switch node; electrically and thermally connected to PCB copper pour
Pin 3 (S)	Source terminal	Reference node for gate drive; ties to power ground or switch node depending on topology

Key Features

Feature	Design Value
Logic-level gate drive	Turns fully on with 4.5 V gate voltage-compatible with standard microcontroller or PWM IC outputs
Optimized FOM (R_DS(on) × Q_g)	~105 mΩ·nC typ.-balances conduction and switching losses for 500 kHz–1 MHz operation
Enhanced dv/dt ruggedness	6 kV/µs rating-prevents false turn-on during high-slew-rate transients in compact layouts
High-temperature operation	Rated to 175 °C junction-enables use in sealed enclosures without forced air cooling
Low Q_rr body diode	≤10 nC reverse recovery charge-reduces shoot-through risk and EMI in synchronous rectifiers

Applications

Server VRM Power Stage

Telecom DC/DC Converter

Use Scenario: High-current, high-efficiency 12 V input to 1 V output conversion in CPU/GPU voltage regulators.

IC Role / Device Role / Timing Role: Synchronous rectifier (low-side FET) in multiphase buck converter.

Use Value: 3.5 mΩ R_DS(on) and 30 nC Q_g enable >95% efficiency at 60 A load while maintaining <100 ns switching transitions.

Use Scenario: Isolated 48 V to 12 V intermediate bus converter in base station power supplies.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or LLC resonant topology.

Use Value: 175 °C rating and 6 kV/µs dv/dt immunity ensure reliability under transient overvoltage and thermal cycling.

Industrial Motor Drive Inverter

Automotive DC/DC Module

Use Scenario: 24 V battery-fed H-bridge for BLDC motor control in factory automation equipment.

IC Role / Device Role / Timing Role: Half-bridge low-side switch with integrated freewheeling path.

Use Value: Low V_SD (0.92 V) and fast diode recovery reduce conduction loss and commutation spikes during PWM dead-time.

Use Scenario: 12 V to 5 V/3.3 V point-of-load regulator in automotive infotainment head units.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in isolated flyback converter.

Use Value: Logic-level gate and 80 A rating support compact design with minimal external drive circuitry and no bootstrap complexity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	30 V, 75 A, R_DS(on) = 4.0 mΩ @ 10 V; TO-252 package; higher R_thJA (62 K/W)	Limited to lower-power applications due to inferior thermal performance and higher conduction loss	Prefer when board space constraints favor DPAK over D²PAK and power < 50 W
STL220N3LLH6	30 V, 120 A, R_DS(on) = 2.2 mΩ @ 10 V; PowerFLAT 5x6; requires gate driver with >2 A peak	Better FOM but demands tighter layout control and higher gate drive strength	Choose for ultra-high-density designs where thermal interface to PCB is optimized and gate drive capability exists

Compared with IRF7470PBF and STL220N3LLH6, IPB04N03LB offers balanced trade-offs: superior thermal resistance (1.4 K/W vs. >3 K/W), logic-level compatibility without external level-shifting, and proven ruggedness in telecom-grade dc/dc converters-making it optimal for mid-to-high power industrial and infrastructure applications.

Availability

IPB04N03LB is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, and industrial motor drives requiring stable component supply and long-term lifecycle assurance.

Supply support for IPB04N03LB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices.

The OptiMOS®2 product line targets high-frequency, high-efficiency power conversion with optimized R_DS(on)/Q_g trade-offs for server, telecom, and industrial SMPS applications.

FAQ

Is IPB04N03LB suitable for synchronous rectification in a 1 MHz LLC converter?

Yes. With 30–40 nC total gate charge, 3.5 mΩ R_DS(on), and ≤10 nC Q_rr, IPB04N03LB supports efficient synchronous rectification up to 1 MHz. Its 6 kV/µs dv/dt rating prevents spurious turn-on during fast resonant transitions, and the 175 °C rating accommodates elevated temperatures in high-frequency magnetics proximity.

What is the recommended gate resistor value for hard-switched 500 kHz operation?

A 2.7 Ω gate resistor is validated in the datasheet for 500 kHz operation with 15 V drive and 40 A load. This value balances switching speed (t_r/t_f ≈ 8–9 ns) and gate oscillation damping. For lower EMI, increase to 4.7 Ω; for faster transitions in zero-voltage switching, reduce to 1.5 Ω with careful layout.

Does IPB04N03LB require a negative gate turn-off voltage?

No. The device has no requirement for negative gate voltage. Its gate threshold (1.2–2.0 V) and 20 V maximum V_GS rating allow safe operation with 0 V to +10 V or +12 V gate drive. Negative bias is unnecessary and not specified in any application circuit in the official datasheet.

Can IPB04N03LB be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (increases with T_j) enables stable current sharing. Layout must ensure matched gate loop inductance and symmetrical thermal coupling. Derate total current by 15% versus single-device rating; use individual 2.7 Ω gate resistors and Kelvin source connections for best balance.

IPB04N03LB Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.5mOhm @ 55A, 10V

Vgs(th) (Max) @ Id:: 2V @ 70µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5203 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 107W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB04N03LB FAQ

1.How can I place an order for IPB04N03LB through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB04N03LB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB04N03LB reliable?

The price and inventory of IPB04N03LB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB04N03LB is usually 5 days.

3.What payment methods are accepted for IPB04N03LB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB04N03LB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB04N03LB?

IPB04N03LB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB04N03LB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB04N03LB?

For technical support, including IPB04N03LB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB04N03LB requirements.

6.How does Aetrix verify that IPB04N03LB is sourced from the original manufacturer or authorized distributors?

All IPB04N03LB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB04N03LB meets industry standards.

7.What is the process for return or replacement of IPB04N03LB?

All IPB04N03LB units undergo pre-shipment inspection (PSI). If there is an issue with IPB04N03LB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB04N03LB part is unused and in its original packaging.

Return procedure for IPB04N03LB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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