Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB050N06NGATMA1

Name: IPB050N06NGATMA1
Brand: Infineon Technologies
SKU: IPB050N06NGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPB050N06NGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB050N06NGATMA1.pdf

Description:: MOSFET N-CH 60V 100A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,078

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPB050N06NGATMA1 from Infineon Technologies is a 60 V, 4.7 mΩ N-channel enhancement-mode MOSFET in PG-TO263-3 (D²-Pak) package, rated for 100 A continuous drain current at T_C = 100 °C and 175 °C junction operation. It features avalanche-rated ruggedness, 6 kV/μs dv/dt immunity, and optimized gate charge (Q_g = 126–167 nC) for high-frequency synchronous rectification in DC-DC converters.

For engineers reviewing the IPB050N06NGATMA1 datasheet, IPB050N06NGATMA1 pinout, IPB050N06NGATMA1 application, or IPB050N06NGATMA1 equivalent, key selection criteria include R_DS(on) at 100 A, thermal resistance (R_thJC = 0.5 K/W), reverse diode performance (V_SD = 0.93–1.3 V), and safe operating area under pulsed conditions.

Technical Context

This OptiMOS® power transistor uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching dynamics. Its 4.7 mΩ R_DS(on) at V_GS = 10 V and I_D = 100 A enables high-efficiency operation in 12 V and 48 V input DC-DC stages, with Q_gd = 51–76 nC supporting controlled turn-off in hard-switched topologies.

The integrated body diode delivers 100 A continuous forward current and t_rr = 60–75 ns with Q_rr = 130–160 nC, enabling reliable synchronous rectification without external Schottky replacement in medium-power server VRMs and telecom POL converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 48 V bus applications with 20 % margin
R_DS(on) max	4.7 mΩ - Confirmed at V_GS = 10 V, I_D = 100 A, SMD version; enables <1.5 W conduction loss at 100 A
I_D cont	100 A at T_C = 100 °C - Validated continuous rating with 0.5 K/W thermal path to heatsink
E_AS	810 mJ - Single-pulse avalanche energy at I_D = 100 A, R_GS = 25 Ω; supports unclamped inductive switching
Q_g	126–167 nC - Total gate charge defining drive strength requirement for 300–500 kHz operation
t_rr	60–75 ns - Reverse recovery time of integrated diode; limits cross-conduction loss in synchronous buck
V_GS(th)	2.1–4.0 V - Threshold voltage range ensuring robust turn-on with standard 5 V logic-level gate drivers

Pinout & Package

IPB050N06NGATMA1 is housed in PG-TO263-3 (D²-Pak) package with isolated tab, optimized for surface-mount thermal management on PCBs with ≥6 cm² copper area. The drain-connected tab provides low-inductance, high-current return path.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or output rail in buck/synchronous rectifier
Pin 2 (Gate)	Control terminal	High-impedance input requiring 126–167 nC drive; sensitive to ESD and ringing
Pin 3 (Drain)	Power terminal	Internally connected to exposed metal tab; must be soldered to large copper pour for thermal and current handling

Key Features

Feature	Design Value
Avalanche-rated operation	810 mJ single-pulse energy withstand ensures reliability during inductive load transients
175 °C maximum junction temperature	Enables compact thermal design in sealed enclosures or high-ambient industrial environments
6 kV/μs dv/dt immunity	Prevents false turn-on in high-speed half-bridge configurations with fast voltage transitions
Optimized gate charge profile	Q_gd/Q_gs ratio ≈ 2.1 supports clean Miller plateau control and reduced switching loss
RoHS-compliant lead plating	Pb-free finish compatible with lead-free reflow profiles and long-term environmental compliance

Applications

Server Voltage Regulator Modules

Telecom Point-of-Load Converters

Use Scenario: High-current, multiphase buck converter supplying CPU/GPU core voltage from 12 V intermediate bus.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 300–600 kHz with precise dead-time control.

Use Value: 4.7 mΩ R_DS(on) reduces conduction loss by >30 % vs. legacy 6.5 mΩ devices, improving full-load efficiency by 0.8–1.2 %.

Use Scenario: Isolated DC-DC module converting -48 V telecom supply to 3.3 V/5 V for baseband processing.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp flyback topology.

Use Value: 60–75 ns t_rr and 130–160 nC Q_rr minimize reverse recovery loss, enabling >94 % peak efficiency at 50 A output.

Industrial Motor Drive Inverters

EV On-Board Charger Stages

Use Scenario: Half-bridge leg in 2–5 kW servo drive inverters using 60 V bus with regenerative braking.

IC Role / Device Role / Timing Role: High-side switch in three-phase inverter with bootstrap gate drive and 175 °C thermal margin.

Use Value: 810 mJ E_AS withstands motor phase short-circuits and inductive kickback without failure.

Use Scenario: Primary-side switching FET in LLC resonant converter stage of 3.3 kW OBC.

IC Role / Device Role / Timing Role: Hard-switched 60 V primary switch operating at 150–250 kHz with zero-voltage switching assist.

Use Value: 0.5 K/W R_thJC allows direct mounting to aluminum heatsink, reducing thermal interface layers and system size.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP050N06N G	Same die, PG-TO220-3 package; R_thJC = 0.5 K/W but higher R_thJA due to through-hole mounting	Better suited for prototyping or lower-volume assemblies where manual soldering is preferred	Select IPP050N06N G when board space permits TO-220 footprint and thermal interface relies on clip-on heatsinks
IPB045N06N G	Lower R_DS(on) (4.5 mΩ typ), identical package and pinout; Q_g increased to 140–185 nC	Delivers marginally higher efficiency but requires stronger gate driver due to higher Q_g	Choose IPB045N06N G only if conduction loss dominates system loss budget and gate drive capability supports 185 nC

Compared with IPP050N06N G, IPB050N06NGATMA1 offers superior PCB thermal integration via D²-Pak mounting, while IPB045N06N G trades higher gate drive demand for marginal R_DS(on) reduction-neither is drop-in compatible without layout or driver review.

Availability

IPB050N06NGATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, industrial motor drives, and EV on-board charger stages requiring stable component supply and long-lifecycle support.

Supply support for IPB050N06NGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the OptiMOS® 60 V product line, engineered specifically for high-current, high-frequency DC-DC conversion in datacenter, telecom, and industrial power systems where low R_DS(on), fast switching, and ruggedness are critical.

FAQ

What is the maximum allowable gate-source voltage for IPB050N06NGATMA1?

The absolute maximum V_GS is ±20 V per datasheet Rev. 1.14. Operation beyond ±16 V risks oxide breakdown, especially at elevated temperatures. For reliable 10 V gate drive, use a clamped driver with Zener protection at 12 V to ensure margin against overshoot during fast switching.

Can IPB050N06NGATMA1 be used in linear mode (as a pass transistor)?

No-it is not characterized or rated for linear (SOA-limited) operation. Its Safe Operating Area curve shows pulse-only capability up to 100 A at V_DS = 10 V for t_p ≤ 1 ms. Continuous linear use risks thermal runaway due to positive temperature coefficient of R_DS(on) and insufficient SOA derating.

Is the drain tab electrically isolated in PG-TO263-3 package?

No-the drain is internally connected to the exposed metal tab in PG-TO263-3. This tab must be soldered to a PCB copper pour tied to the drain net. Electrical isolation requires insulating thermal pads or dedicated isolated packages like TO-220FP.

What is the recommended PCB layout for optimal thermal performance?

Use ≥6 cm² of 70 μm thick copper on inner or outer layer, directly connected to the drain tab with ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch). Place gate and source traces short and wide to minimize L_GS and L_SS; avoid routing high-dv/dt nodes near sensitive analog signals.

IPB050N06NGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.7mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 270µA

Gate Charge (Qg) (Max) @ Vgs:: 167 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6100 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB050N06NGATMA1 FAQ

1.How can I place an order for IPB050N06NGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB050N06NGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB050N06NGATMA1 reliable?

The price and inventory of IPB050N06NGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB050N06NGATMA1 is usually 5 days.

3.What payment methods are accepted for IPB050N06NGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB050N06NGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB050N06NGATMA1?

IPB050N06NGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB050N06NGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB050N06NGATMA1?

For technical support, including IPB050N06NGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB050N06NGATMA1 requirements.

6.How does Aetrix verify that IPB050N06NGATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB050N06NGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB050N06NGATMA1 meets industry standards.

7.What is the process for return or replacement of IPB050N06NGATMA1?

All IPB050N06NGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB050N06NGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB050N06NGATMA1 part is unused and in its original packaging.

Return procedure for IPB050N06NGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…