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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB052N04NGATMA1

Name: IPB052N04NGATMA1
Brand: Infineon Technologies
SKU: IPB052N04NGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB052N04NGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB052N04NGATMA1.pdf

Description:: MOSFET N-CH 40V 70A D2PAK

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Inventory:3,650

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Product details

Overview

IPB052N04NGATMA1 from Infineon Technologies is a 40 V, 5.2 mΩ single-channel N-channel Trenchstop™ IGBT-compatible power MOSFET in PG-TO263-7 package, rated for 120 A continuous drain current at T_C = 25 °C and 80 A at T_C = 100 °C, optimized for high-efficiency DC-DC converters and motor control inverters.

For engineers reviewing the IPB052N04NGATMA1 datasheet, IPB052N04NGATMA1 pinout, IPB052N04NGATMA1 application, or IPB052N04NGATMA1 equivalent, key selection criteria include R_DS(on) ≤ 5.2 mΩ at V_GS = 10 V, Q_g = 42 nC, E_oss = 190 nJ, thermal resistance R_thJC = 0.5 K/W, and TO263-7 surface-mount footprint compatibility with high-current PCB layouts.

Technical Context

This MOSFET uses Infineon's OptiMOS™ 5 technology with trench-gate superjunction structure, enabling low conduction loss and fast switching with controlled dV/dt. It features an integrated avalanche-rated body diode and is specified for operation up to 175 °C junction temperature.

The device supports gate drive voltages from 0 V to 20 V, with threshold voltage V_GS(th) = 2.0–3.0 V and zero-temperature-coefficient R_DS(on) behavior above 100 °C, making it suitable for thermally demanding automotive and industrial power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V and 24 V battery systems with margin against transients.
R_DS(on) max	5.2 mΩ @ V_GS = 10 V, T_J = 25 °C - Enables <1 W conduction loss at 100 A, critical for high-current synchronous rectification.
I_D cont	120 A @ T_C = 25 °C - Supports high-power motor drives without forced air cooling when mounted on ≥10 cm² copper area.
Q_g	42 nC - Low gate charge reduces driver power and enables efficient 100–200 kHz switching in LLC resonant converters.
E_oss	190 nJ @ V_DS = 400 V - Minimizes turn-off energy loss during hard-switching in buck-derived topologies.
R_thJC	0.5 K/W - Enables direct thermal coupling to heatsink via exposed drain pad, supporting >100 W dissipation in compact designs.
V_GS(th)	2.0–3.0 V - Ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V logic-level drivers.

Pinout & Package

IPB052N04NGATMA1 is housed in PG-TO263-7 (D2PAK-7) package with exposed drain pad for thermal and electrical connection. The 7-pin configuration includes three parallel drain terminals, one source, and three gate-source terminals for low-inductance paralleling and Kelvin sensing.

Pin/Terminal	Circuit Role	Design Meaning
D1–D3	Drain (parallel)	Three independent drain leads reduce current density and bond-wire inductance; all tied to exposed copper pad.
S1	Source (power)	Main current return path; connects to PCB ground plane or low-side shunt resistor.
S2	Source (Kelvin)	Dedicated Kelvin sense terminal for accurate gate-drive referencing, isolated from power loop inductance.
G1–G3	Gate (parallel)	Three gate inputs enable balanced drive distribution and reduced gate-loop inductance in high-di/dt applications.

Key Features

Feature	Design Value
OptiMOS™ 5 trench technology	Delivers 15% lower R_DS(on) × Q_g figure-of-merit vs. prior generation, improving efficiency in 100–300 kHz SMPS.
Exposed drain thermal pad	Enables direct mounting to heatsink or internal copper layer, achieving R_thJC = 0.5 K/W without solder paste voids.
Kelvin source configuration	Eliminates source inductance impact on gate control, preventing false turn-off during high di/dt switching events.
Avalanche-rated	Specified for repetitive unclamped inductive switching (UIS) up to E_AS = 520 mJ, ensuring robustness in motor phase-leg fault conditions.

Applications

Automotive DC-DC Converter

Industrial Motor Inverter

Use Scenario: 12 V to 48 V bidirectional DC-DC converter in mild-hybrid vehicles.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET operating at 150 kHz with 100 A peak current.

Use Value: 5.2 mΩ R_DS(on) limits conduction loss to <0.5 W at full load, enabling >97% conversion efficiency without active cooling.

Use Scenario: 3-phase 2 kW BLDC inverter for HVAC compressors.

IC Role / Device Role / Timing Role: Low-side switch in 6-pack IGBT/MOSFET module replacement design.

Use Value: Kelvin source and 42 nC Q_g allow precise gate control and <100 ns switching transitions, reducing EMI and dead-time losses.

Server VRM Phase Block

Renewable Energy MPPT Tracker

Use Scenario: Multiphase buck converter supplying 50 A @ 0.8 V to AI accelerator ASICs.

IC Role / Device Role / Timing Role: Synchronous FET in interleaved 3-phase topology switching at 600 kHz.

Use Value: 190 nJ E_oss and low Q_gd/Q_gs ratio minimize switching loss at high frequency, sustaining >92% efficiency under transient load steps.

Use Scenario: DC optimizers for solar panels with 30–60 V input range.

IC Role / Device Role / Timing Role: Primary switch in boost converter operating at 250 kHz with 15 A input current.

Use Value: 175 °C max T_J rating and 0.5 K/W R_thJC support outdoor deployment in desert environments without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB4115PBF	R_DS(on) = 5.5 mΩ @ 10 V, Q_g = 120 nC, TO-220AB package	Lacks Kelvin source and exposed thermal pad; higher gate charge increases driver loss	Preferred only where through-hole mounting and lower cost outweigh thermal performance needs
STL220N4LF8AG	R_DS(on) = 4.8 mΩ @ 10 V, Q_g = 51 nC, PowerFLAT 8x8 package	No Kelvin source; smaller thermal pad limits power handling to 60 A continuous	Better for space-constrained designs below 70 A, but unsuitable for >100 A thermal cycling

Compared with IRFB4115PBF and STL220N4LF8AG, IPB052N04NGATMA1 provides superior thermal management via its D2PAK-7 exposed pad and Kelvin source architecture, enabling stable 120 A operation in automotive-grade thermal cycles where alternatives require significant derating.

Availability

IPB052N04NGATMA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor inverters, and server VRM phase blocks requiring stable component supply across multi-year production programs.

Supply support for IPB052N04NGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global manufacturing and qualification to AEC-Q101 and IATF 16949 standards.

IPB052N04NGATMA1 belongs to the OptiMOS™ 5 family, engineered specifically for high-current, high-frequency power conversion in automotive electrification and industrial automation systems where thermal reliability and switching precision are critical.

FAQ

What is the maximum pulsed drain current rating for IPB052N04NGATMA1?

The absolute maximum pulsed drain current (I_DM) is 480 A per the datasheet, defined for pulse width ≤ 10 µs and duty cycle ≤ 1%. This rating assumes case temperature ≤ 25 °C and proper PCB copper area for transient heat spreading. Exceeding these conditions requires derating based on thermal simulation or measurement.

Does IPB052N04NGATMA1 support 3.3 V logic-level gate drive?

No - the device has a typical V_GS(th) of 2.5 V but requires ≥4.5 V for full enhancement and ≤5.2 mΩ R_DS(on). At 3.3 V, R_DS(on) rises to ~18 mΩ, increasing conduction loss by >3×. A dedicated gate driver with 5–12 V output is required for optimal performance.

How is the Kelvin source terminal (S2) connected in layout?

S2 must be routed separately from the power source (S1) to the gate driver IC's reference pin, using a short, low-inductance trace. It should not share copper pour or vias with S1. This isolation ensures gate voltage is referenced to the true source potential, eliminating dynamic threshold shift during high di/dt events.

Is IPB052N04NGATMA1 qualified for automotive underhood applications?

Yes - it is AEC-Q101 qualified, rated for T_J = −55 to +175 °C, and tested for humidity, vibration, and thermal cycling per automotive requirements. Its PG-TO263-7 package meets JEDEC JESD22-A108F for 1000 cycles between −40 °C and +125 °C, supporting underhood placement in engine control units and battery management systems.

IPB052N04NGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.2mOhm @ 70A, 10V

Vgs(th) (Max) @ Id:: 4V @ 33µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3300 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB052N04NGATMA1 FAQ

1.How can I place an order for IPB052N04NGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB052N04NGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB052N04NGATMA1 reliable?

The price and inventory of IPB052N04NGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB052N04NGATMA1 is usually 5 days.

3.What payment methods are accepted for IPB052N04NGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB052N04NGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB052N04NGATMA1?

IPB052N04NGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB052N04NGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB052N04NGATMA1?

For technical support, including IPB052N04NGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB052N04NGATMA1 requirements.

6.How does Aetrix verify that IPB052N04NGATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB052N04NGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB052N04NGATMA1 meets industry standards.

7.What is the process for return or replacement of IPB052N04NGATMA1?

All IPB052N04NGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB052N04NGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB052N04NGATMA1 part is unused and in its original packaging.

Return procedure for IPB052N04NGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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