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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB055N03LGATMA1

Name: IPB055N03LGATMA1
Brand: Infineon Technologies
SKU: IPB055N03LGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB055N03LGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB055N03LGATMA1.pdf

Description:: MOSFET N-CH 30V 50A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:5,606

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Product details

Overview

IPB055N03LGATMA1 from Infineon Technologies is an N-channel logic-level power MOSFET in PG-TO263-3 package, rated for 30 V V_DS, 5.5 mΩ R_DS(on) at V_GS = 10 V, and 50 A continuous drain current at T_C = 100 °C. It features avalanche rating, low gate charge (Q_g = 31 nC), and optimized FOM for high-efficiency DC/DC converters and SMPS.

For engineers reviewing the IPB055N03LGATMA1 datasheet, IPB055N03LGATMA1 pinout, IPB055N03LGATMA1 application, or IPB055N03LGATMA1 equivalent, key selection criteria include R_DS(on) vs. gate drive voltage, single-pulse avalanche energy (E_AS = 60 mJ), thermal resistance (R_thJC = 2.2 K/W), and synchronous FET gate charge (Q_g(sync) = 13 nC).

Technical Context

This MOSFET employs Infineon's OptiMOS™3 silicon technology, delivering enhanced conduction and switching performance via reduced R_DS(on) × Q_g figure-of-merit. Its logic-level gate threshold (V_GS(th) = 1–2.2 V) enables direct drive from 3.3 V or 5 V controllers without level-shifting.

Designed for hard-switched topologies, it supports fast dv/dt immunity (6 kV/µs) and exhibits robust reverse diode recovery (Q_rr = 20 nC, I_F = 30 A). Thermal design is enabled by low junction-to-case resistance and validated operation up to T_j = 175 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V input rail applications with margin
R_DS(on) max	5.5 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 50 A in high-current POL stages
I_D cont.	50 A @ T_C = 100 °C - Sustains full load in compact heatsinked SMPS designs
Q_g	31 nC @ V_DD = 15 V, I_D = 30 A - Determines gate driver power and switching loss in 300–1000 kHz converters
E_AS	60 mJ - Supports reliable operation under inductive turn-off stress without external snubbing
R_thJC	2.2 K/W - Enables precise junction temperature estimation using case temperature measurement
Q_g(sync)	13 nC @ V_GS = 0–4.5 V - Optimized for low-voltage gate drive in synchronous buck high-side or low-side roles

Pinout & Package

IPB055N03LGATMA1 uses the PG-TO263-3 (D²PAK) surface-mount package with isolated drain tab, optimized for PCB thermal dissipation. The device has three terminals: Drain (Tab), Source (Pin 1), and Gate (Pin 2).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Exposed copper pad electrically connected to drain; requires soldered thermal pad for R_thJA ≤ 40 K/W
Source (Pin 1)	Reference node for gate drive and current sensing	Low-inductance connection point for gate driver return and shunt resistor placement
Gate (Pin 2)	Control terminal for channel modulation	High-impedance input requiring <20 V absolute max; sensitive to ESD and ringing

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V - compatible with standard microcontroller GPIO and PWM IC outputs
Avalanche-rated	Rated for repetitive single-pulse avalanche (I_AS = 50 A, E_AS = 60 mJ) - eliminates need for external clamping in flyback or LLC resonant circuits
Low Q_g × R_DS(on) FOM	31 nC × 5.5 mΩ = 170.5 - benchmark efficiency metric for high-frequency synchronous rectification
Halogen-free & RoHS	Complies with IEC61249-2-21 and EU RoHS Directive 2011/65/EU - suitable for consumer and industrial end-equipment

Applications

Server VRM

Industrial DC/DC Converter

Use Scenario: Point-of-load regulation for CPU/GPU core voltage in 1U rack servers.

IC Role / Device Role / Timing Role: Low-side synchronous FET in multiphase buck converter operating at 500–800 kHz.

Use Value: 5.5 mΩ R_DS(on) and 13 nC Q_g(sync) minimize conduction + switching losses, enabling >95% efficiency at 40 A per phase.

Use Scenario: Isolated 24 V to 5 V/12 V DC/DC supply in programmable logic controllers.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or half-bridge topology.

Use Value: 60 mJ E_AS and 6 kV/µs dv/dt immunity ensure robustness against transformer leakage spikes and layout parasitics.

Automotive Body Control Module

Telecom Power Supply

Use Scenario: Load switching and motor drive in 12 V automotive body electronics.

IC Role / Device Role / Timing Role: High-current load switch with integrated reverse polarity protection.

Use Value: Logic-level V_GS(th) (1–2.2 V) allows direct drive from 3.3 V CAN/LIN transceivers; avalanche rating handles inductive kickback from solenoids.

Use Scenario: Primary-side switch in 48 V telecom rectifier modules with forced-air cooling.

IC Role / Device Role / Timing Role: Main switching element in phase-shifted full-bridge topology.

Use Value: R_thJC = 2.2 K/W and 50 A rating support high-power density (≥500 W/in³) with minimal heatsink volume.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PBF	R_DS(on) = 6.0 mΩ @ 10 V; Q_g = 42 nC; TO-220 package	Higher conduction loss and larger package footprint; no avalanche rating	Acceptable where thermal budget permits higher R_DS(on) and board space allows through-hole mounting
STL220N3LLH6	R_DS(on) = 5.2 mΩ @ 10 V; Q_g = 35 nC; PowerFLAT 8x8 package	Lower R_DS(on) but no isolated drain tab; limited avalanche capability (E_AS not specified)	Better for ultra-low-loss SMT-only designs where avalanche stress is mitigated externally

Compared with IRL3803PBF and STL220N3LLH6, IPB055N03LGATMA1 uniquely combines 5.5 mΩ R_DS(on), 60 mJ avalanche energy, and D²PAK thermal performance-making it optimal for thermally constrained, high-reliability DC/DC and motor control applications requiring both efficiency and ruggedness.

Availability

IPB055N03LGATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, and automotive body control modules requiring stable component supply across multi-year production cycles.

Supply support for IPB055N03LGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101.

This device belongs to the OptiMOS™3 power transistor product line, engineered specifically for high-frequency, high-efficiency switching in server, telecom, and industrial power supplies where low R_DS(on) and fast switching are critical.

FAQ

What is the maximum gate-source voltage rating for IPB055N03LGATMA1?

The absolute maximum V_GS is ±20 V. Operation beyond this risks permanent gate oxide damage. For reliable logic-level drive, V_GS should be maintained between 4.5 V (full enhancement) and 10 V (optimal R_DS(on)), with transient overshoot suppressed using gate resistors and TVS clamping.

Is IPB055N03LGATMA1 suitable for synchronous rectification in a 48 V input buck converter?

Yes - its 4.5 V logic-level threshold, 13 nC Q_g(sync), and 5.5 mΩ R_DS(on) make it well-suited as a low-side synchronous FET in 48 V input buck converters up to 300 kHz. Thermal validation must confirm T_j remains ≤175 °C under worst-case load and ambient conditions.

Does IPB055N03LGATMA1 have a built-in body diode, and what are its key parameters?

Yes - it integrates a fast-recovery epitaxial body diode rated for 50 A continuous forward current (I_S) and 350 A pulsed current (I_S,pulse). Key specs include V_SD = 0.88–1.1 V at 30 A/25 °C and Q_rr = 20 nC, enabling use in freewheeling and synchronous rectification without external diodes.

How does the PG-TO263-3 package of IPB055N03LGATMA1 compare thermally to TO-220?

The PG-TO263-3 (D²PAK) offers superior PCB-based thermal dissipation: R_thJA = 40 K/W with 6 cm² copper area versus ~62 K/W for TO-220 on same PCB. Its exposed drain tab enables direct thermal coupling to internal ground planes, reducing junction temperature rise by up to 15 °C at 50 A compared to TO-220 in identical layouts.

IPB055N03LGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3200 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 68W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB055N03LGATMA1 FAQ

1.How can I place an order for IPB055N03LGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB055N03LGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB055N03LGATMA1 reliable?

The price and inventory of IPB055N03LGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB055N03LGATMA1 is usually 5 days.

3.What payment methods are accepted for IPB055N03LGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB055N03LGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB055N03LGATMA1?

IPB055N03LGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB055N03LGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB055N03LGATMA1?

For technical support, including IPB055N03LGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB055N03LGATMA1 requirements.

6.How does Aetrix verify that IPB055N03LGATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB055N03LGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB055N03LGATMA1 meets industry standards.

7.What is the process for return or replacement of IPB055N03LGATMA1?

All IPB055N03LGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB055N03LGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB055N03LGATMA1 part is unused and in its original packaging.

Return procedure for IPB055N03LGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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