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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB05N03LA

Name: IPB05N03LA
Brand: Infineon Technologies
SKU: IPB05N03LA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB05N03LA

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB05N03LA.pdf

Description:: MOSFET N-CH 25V 80A TO263-3

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Product details

Overview

IPB05N03LA from Infineon Technologies is an N-channel logic-level OptiMOS®2 power MOSFET in PG-TO263 package, rated for 25 V V_DS, 4.6 mΩ R_DS(on) (max) at V_GS = 10 V and I_D = 55 A, with 175 °C maximum junction temperature and dv/dt rating of 6 kV/µs - optimized for high-frequency DC/DC converters in server VRMs and POL modules.

For engineers reviewing the IPB05N03LA datasheet, IPB05N03LA pinout, IPB05N03LA application, or IPB05N03LA equivalent, key selection criteria include its low gate charge × R_DS(on) figure-of-merit (FOM), robust avalanche energy (190 mJ), and thermal resistance (R_thJC = 1.6 K/W), critical for thermally constrained synchronous buck topologies.

Technical Context

This device employs a trench-based silicon process to achieve ultra-low R_DS(on) while maintaining fast switching via minimized C_iss (typ. 2761 pF) and C_rss (typ. 139.5 pF). Its logic-level gate threshold (V_GS(th) = 1.2–2.0 V) enables direct drive from 3.3 V or 5 V controllers without level-shifting.

The integrated body diode supports synchronous rectification with low V_SD (0.97–1.2 V at 80 A, T_j = 25 °C) and minimal Q_rr (≤10 nC), reducing reverse recovery losses in hard-switched and ZVS converter stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - defines maximum blocking voltage in low-voltage POL and battery-input applications
R_DS(on) max	4.6 mΩ at V_GS = 10 V, I_D = 55 A - enables <1 W conduction loss at 80 A in compact PCB layouts
Q_g total	19–25 nC - determines gate driver current requirement and switching loss trade-off
E_AS	190 mJ - ensures single-pulse avalanche ruggedness during transient overvoltage events
R_thJC	1.6 K/W - allows >90 W power dissipation with modest heatsinking at T_C = 100 °C
dv/dt rating	6 kV/µs - prevents spurious turn-on in high-dI/dt synchronous buck phases
T_j max	175 °C - supports operation in sealed enclosures or high-ambient industrial environments

Pinout & Package

IPB05N03LA uses the PG-TO263-3-2 surface-mount package (also known as TO-263AB or D2PAK), featuring isolated drain tab for PCB thermal relief and standard 3-pin layout.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Common return path for load current; tied to PCB ground plane for low-inductance routing
Pin 2 (Gate)	Control input	Logic-level compatible; requires <25 nC gate charge to reach plateau voltage (~3.4 V)
Pin 3 (Drain)	Power output / high-side switch node	Exposed metal tab - electrically connected to drain; must be isolated from heatsink unless floating design

Key Features

Feature	Design Value
Optimized FOM (Q_g × R_DS(on))	~115 nC·mΩ - balances switching and conduction loss for 300–1000 kHz DC/DC operation
Logic-level gate drive	V_GS(th) = 1.2–2.0 V - eliminates need for external gate drivers in 3.3 V microcontroller-based control
Enhanced thermal performance	R_thJC = 1.6 K/W - enables >75% higher power density vs. comparable SO-8 MOSFETs
Robust body diode	Q_rr ≤ 10 nC, V_SD ≤ 1.2 V - reduces dead-time losses and EMI in synchronous rectification
JEDEC-qualified reliability	Qualified per J-STD-20/JESD22 - validated for reflow, humidity, and temperature cycling in production assembly

Applications

Server Voltage Regulator Modules (VRMs)

Point-of-Load (POL) Converters

Use Scenario: High-current, multi-phase buck converters supplying CPU/GPU core voltages (0.8–1.2 V @ up to 200 A).

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in interleaved 3+ phase topology, switching at 500–800 kHz.

Use Value: 4.6 mΩ R_DS(on) and 1.6 K/W R_thJC reduce conduction loss and thermal footprint, enabling smaller heatsinks and higher power density.

Use Scenario: Compact 12 V-to-3.3 V or 5 V DC/DC modules on telecom line cards and FPGA carrier boards.

IC Role / Device Role / Timing Role: Primary power switch in monolithic or discrete buck regulator with integrated controller.

Use Value: Logic-level gate compatibility allows direct drive from PWM ICs like UCC28911 or MP2315, eliminating gate driver BOM cost.

Automotive ADAS Power Supplies

Industrial Motor Drive Half-Bridges

Use Scenario: 12 V input power conversion for radar sensors and camera modules requiring ASIL-B compliance.

IC Role / Device Role / Timing Role: High-efficiency buck stage powering image signal processors and SoCs under wide ambient (-40 to 125 °C).

Use Value: 175 °C T_j,max and JEDEC qualification ensure reliability across automotive temperature cycles without derating.

Use Scenario: Low-voltage (<30 V) BLDC motor gate driver stages in HVAC blowers and robotic actuators.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration driving gate of high-side MOSFET or IGBT.

Use Value: 6 kV/µs dv/dt rating prevents false triggering during fast high-side switching transitions in noisy motor environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 5.2 mΩ (max), Q_g = 14.5 nC, R_thJC = 2.0 K/W, same PG-TO263-3 package	Slightly higher conduction loss; lower gate charge reduces driver stress	Preferred where gate drive capability is limited but thermal margin permits higher R_DS(on)
STL220N3LLH6	R_DS(on) = 3.8 mΩ (max), Q_g = 32 nC, R_thJC = 1.8 K/W, same TO-263-3 package	Lower R_DS(on) improves efficiency but higher Q_g increases switching loss and driver demand	Best for fixed-frequency, low-switching-loss priority designs with robust gate drivers

Compared with IRLHS6342TRPBF and STL220N3LLH6, IPB05N03LA delivers the optimal balance of low R_DS(on), moderate Q_g, and industry-leading thermal resistance - making it ideal for space-constrained, high-current, high-frequency POL converters where both conduction and thermal management are critical.

Availability

IPB05N03LA is available at Aetrix Electronics and suitable for server VRMs, point-of-load converters, and automotive ADAS power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for IPB05N03LA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

IPB05N03LA belongs to the OptiMOS®2 power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing, communications, and automotive applications where low R_DS(on) and thermal performance are decisive.

FAQ

Is IPB05N03LA suitable for synchronous rectification in buck converters?

Yes. Its low V_SD (0.97–1.2 V at 80 A) and minimal Q_rr (≤10 nC) make it well-suited as a synchronous rectifier. The integrated body diode exhibits fast recovery and low forward drop, reducing conduction and switching losses compared to external Schottky solutions in 300–1000 kHz designs.

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current is 76 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area (≥6 cm²) and thermal interface to maintain junction temperature ≤175 °C under steady-state conditions.

Does IPB05N03LA require a gate resistor for stability in high-speed switching?

A gate resistor (typically 2.7 Ω, per datasheet test condition) is recommended to dampen ringing and control dV/dt during turn-on/turn-off. While not strictly mandatory, omitting it risks overshoot, shoot-through in half-bridges, and EMI due to parasitic LC resonance with gate capacitance and layout inductance.

Can IPB05N03LA be used in linear mode (as a pass transistor)?

No. It is not characterized or rated for linear (saturation) operation. The Safe Operating Area (SOA) graph shows only single-pulse capability down to DC, with no guaranteed safe continuous linear-region operation. Use only in switched-mode applications per datasheet SOA limits.

IPB05N03LA Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.6mOhm @ 55A, 10V

Vgs(th) (Max) @ Id:: 2V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3110 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 94W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB05N03LA FAQ

1.How can I place an order for IPB05N03LA through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB05N03LA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB05N03LA reliable?

The price and inventory of IPB05N03LA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB05N03LA is usually 5 days.

3.What payment methods are accepted for IPB05N03LA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB05N03LA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB05N03LA?

IPB05N03LA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB05N03LA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB05N03LA?

For technical support, including IPB05N03LA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB05N03LA requirements.

6.How does Aetrix verify that IPB05N03LA is sourced from the original manufacturer or authorized distributors?

All IPB05N03LA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB05N03LA meets industry standards.

7.What is the process for return or replacement of IPB05N03LA?

All IPB05N03LA units undergo pre-shipment inspection (PSI). If there is an issue with IPB05N03LA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB05N03LA part is unused and in its original packaging.

Return procedure for IPB05N03LA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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