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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB05N03LB

Name: IPB05N03LB
Brand: Infineon Technologies
SKU: IPB05N03LB
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB05N03LB

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB05N03LB.pdf

Description:: MOSFET N-CH 30V 80A TO263-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPB05N03LB from Infineon Technologies is an N-channel logic-level OptiMOS®2 power MOSFET in PG-TO263-3 package, rated for 30 V V_DS, 5.0 mΩ R_DS(on) at 10 V_GS, 80 A continuous drain current at T_C = 100 °C, and 175 °C maximum junction temperature-designed for high-frequency DC/DC converters in server VRMs and POL modules.

For engineers reviewing the IPB05N03LB datasheet, IPB05N03LB pinout, IPB05N03LB application, or IPB05N03LB equivalent, key selection criteria include its low gate charge × R_DS(on) figure of merit (FOM), dv/dt ruggedness (6 kV/µs), and thermal resistance (R_thJC = 1.6 K/W) critical for compact, high-efficiency synchronous buck designs.

Technical Context

This MOSFET employs a trench-based silicon process optimized for low conduction and switching losses. Its logic-level gate threshold (V_GS(th) = 1.2–2.0 V) enables direct drive from 3.3 V or 5 V controllers, while its 175 °C rating supports operation in thermally constrained environments without derating.

The device integrates a robust body diode with Q_rr = 10 nC and V_SD = 0.98–1.2 V at 80 A, supporting efficient synchronous rectification and hard-switched flyback topologies. Its dv/dt immunity (6 kV/µs) ensures reliable operation under fast transient voltage stress.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12 V input rail applications with margin
R_DS(on) max	5.0 mΩ at V_GS = 10 V, I_D = 60 A - Enables <1 W conduction loss at 40 A in 48 V→12 V conversion
I_D cont.	80 A at T_C = 100 °C - Supports high-current POL stages with minimal heatsinking
Q_g total	19–25 nC - Low gate charge enables >1 MHz switching with moderate driver strength
R_thJC	1.6 K/W - Allows 60 W dissipation with only 96 K rise from case to junction
E_AS	136 mJ - Withstands single-pulse avalanche energy during inductive turn-off transients
dv/dt rating	6 kV/µs - Immune to parasitic turn-on in high-dI/dt synchronous buck phases

Pinout & Package

IPB05N03LB uses the PG-TO263-3 (D²PAK) surface-mount package with isolated tab. The drain is connected to the large exposed copper pad on the underside; source and gate are on the gull-wing leads.

Pin/Terminal	Circuit Role	Design Meaning
Lead 1 (left)	Gate (G)	Control terminal; requires <25 nC charge to reach plateau; low R_G = 1 Ω aids fast switching
Lead 2 (center)	Drain (D)	Main power terminal; electrically tied to exposed thermal pad; carries full load current and heat
Lead 3 (right)	Source (S)	Reference node for gate drive; connects to power ground plane; forms return path for body diode current

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V - compatible with standard 3.3 V microcontrollers and PWM ICs
Low FOM (Q_g × R_DS(on))	~125 nC·mΩ - minimizes combined conduction + switching loss in high-frequency SMPS
Enhanced dv/dt ruggedness	6 kV/µs rating - prevents false turn-on during fast voltage transitions in half-bridge configurations
High-temperature operation	175 °C T_j,max - enables use in sealed enclosures or near hot components without thermal throttling
Robust body diode	Q_rr = 10 nC, V_SD = 0.98 V - reduces reverse recovery loss and EMI in synchronous rectifier mode

Applications

Server Point-of-Load Converters

Industrial DC/DC Modules

Use Scenario: 48 V to 12 V or 5 V step-down conversion in rack-mounted servers with >1 MHz switching frequency.

IC Role / Device Role / Timing Role: High-side synchronous FET in multiphase buck converter delivering up to 120 A per rail.

Use Value: 5.0 mΩ R_DS(on) and 25 nC Q_g enable >95% efficiency at 12 A/mm² PCB current density.

Use Scenario: Isolated 24 V input to 3.3 V/5 V output in programmable logic controllers with wide ambient temperature range.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or LLC resonant converter.

Use Value: 175 °C rating and 1.6 K/W R_thJC ensure stable operation at -40 °C to +85 °C ambient without forced air.

Automotive ADAS Power Supplies

Telecom Rectifier Boards

Use Scenario: 12 V battery-fed 3.3 V supply for radar sensor ECUs requiring AEC-Q101 compliance and pulse-load capability.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward converter with 400 A/µs di/dt.

Use Value: 6 kV/µs dv/dt rating and 10 nC Q_rr prevent shoot-through and reduce EMI during transient load steps.

Use Scenario: 54 V telecom rectifier output stage feeding distributed 12 V backplane rails in central office equipment.

IC Role / Device Role / Timing Role: OR-ing FET in redundant 48 V input path with hot-swap control.

Use Value: Low 0.98 V V_SD and 78 A I_S support bidirectional current flow with <0.8 W forward drop at 80 A.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL110N3LLH6	R_DS(on) = 4.2 mΩ (typ), Q_g = 32 nC, TO-263 package, 150 °C T_j,max	Higher gate charge increases driver loss; lower max temp limits high-ambient use	Prefer when lowest R_DS(on) dominates over switching loss and thermal margin
IRF8729PBF	R_DS(on) = 5.2 mΩ, Q_g = 15 nC, TO-252 package, 175 °C rating, no dv/dt spec	Smaller package raises R_thJA; lacks published dv/dt immunity data	Prefer where board space is constrained and dv/dt stress is minimal

Compared with STL110N3LLH6 and IRF8729PBF, IPB05N03LB offers the best balance of low FOM, verified dv/dt ruggedness, and 175 °C operation-making it optimal for high-reliability, high-frequency DC/DC where thermal headroom and transient immunity are critical.

Availability

IPB05N03LB is available at Aetrix Electronics and suitable for server point-of-load converters, industrial DC/DC modules, and automotive ADAS power supplies requiring stable component supply across multi-year production cycles.

Supply support for IPB05N03LB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The OptiMOS®2 product line delivers high-performance, logic-level power MOSFETs optimized for high-frequency switching in server, telecom, and industrial power supplies-emphasizing low FOM, thermal robustness, and system-level reliability.

FAQ

Is IPB05N03LB suitable for synchronous rectification in a 12 V output buck converter?

Yes. Its 0.98 V body diode forward voltage at 80 A and 10 nC reverse recovery charge minimize conduction and switching losses in synchronous rectifier mode. Combined with 5.0 mΩ R_DS(on), it achieves <1.2 W total loss at 60 A output, making it ideal for high-efficiency 12 V POL stages.

What is the recommended gate resistor value for 500 kHz operation?

A 2.7 Ω gate resistor is validated in the datasheet for 500 kHz switching with 15 V drive and 40 A load. This value balances turn-on speed (t_r = 6–9 ns) against ringing suppression and driver power dissipation (~0.3 W at 500 kHz).

Does IPB05N03LB require a heatsink when operating at 72 A continuous current?

At 72 A and T_C = 100 °C, junction temperature reaches ~165 °C using the specified 6 cm² copper area. A minimal heatsink or forced airflow is recommended for sustained operation above 60 A to maintain margin below 175 °C T_j,max.

How does the dv/dt rating impact layout in half-bridge configurations?

The 6 kV/µs rating allows tighter layout tolerances in high-dv/dt nodes. To maintain immunity, keep gate loop area <10 mm², use local 100 nF ceramic decoupling at the source, and avoid routing gate traces parallel to high-di/dt paths such as phase-node connections.

IPB05N03LB Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 2V @ 40µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3209 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 94W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB05N03LB FAQ

1.How can I place an order for IPB05N03LB through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB05N03LB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB05N03LB reliable?

The price and inventory of IPB05N03LB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB05N03LB is usually 5 days.

3.What payment methods are accepted for IPB05N03LB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB05N03LB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB05N03LB?

IPB05N03LB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB05N03LB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB05N03LB?

For technical support, including IPB05N03LB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB05N03LB requirements.

6.How does Aetrix verify that IPB05N03LB is sourced from the original manufacturer or authorized distributors?

All IPB05N03LB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB05N03LB meets industry standards.

7.What is the process for return or replacement of IPB05N03LB?

All IPB05N03LB units undergo pre-shipment inspection (PSI). If there is an issue with IPB05N03LB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB05N03LB part is unused and in its original packaging.

Return procedure for IPB05N03LB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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