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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB065N03LGATMA1

Name: IPB065N03LGATMA1
Brand: Infineon Technologies
SKU: IPB065N03LGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB065N03LGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB065N03LGATMA1.pdf

Description:: MOSFET N-CH 30V 50A D2PAK

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Inventory:6,239

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Product details

Overview

IPB065N03LGATMA1 from Infineon Technologies is a N-channel enhancement-mode power MOSFET optimized for high-efficiency DC-DC conversion, featuring R_DS(on) = 6.5 mΩ (max) at V_GS = 10 V, continuous drain current I_D = 50 A, and V_DS = 30 V. It is used in synchronous buck converters for server VRMs and POL modules.

For engineers reviewing the IPB065N03LGATMA1 datasheet, IPB065N03LGATMA1 pinout, IPB065N03LGATMA1 application, or IPB065N03LGATMA1 equivalent, key selection criteria include low conduction loss at 4.5 V gate drive, thermally robust D2PAK-7L package, and specified avalanche energy rating (E_AS = 120 mJ).

Technical Context

This MOSFET employs Infineon's OptiMOS™ 5 technology, enabling fast switching with t_rise = 12 ns and t_fall = 9 ns at I_D = 25 A, V_DD = 15 V, and R_G = 2.5 Ω. Its gate charge Q_g is 22 nC (typ), supporting high-frequency operation up to 1 MHz in hard-switched topologies.

The device integrates an integrated Schottky diode with reverse recovery charge Q_rr = 45 nC and soft recovery behavior, reducing EMI and body-diode losses in synchronous rectification applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input bus systems
R_DS(on) max @ V_GS = 10 V	6.5 mΩ - Enables ≤1.6 W conduction loss at 50 A continuous current
I_D (continuous)	50 A - Rated for high-current POL stages without derating at T_C = 25 °C
Q_g (typ)	22 nC - Supports efficient 500 kHz–1 MHz switching with moderate gate driver strength
E_AS	120 mJ - Confirmed single-pulse avalanche capability for inductive load protection
Thermal Resistance R_thJC	1.2 K/W - Enables direct heatsink mounting in D2PAK-7L for <15 °C junction-to-case rise at 50 W dissipation

Pinout & Package

Package: D2PAK-7L (TO-263-7), surface-mount, thermally enhanced with exposed drain pad and 7-pin layout including 3-source pins and dual gate connections for paralleling.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 7	Source	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching
4	Gate	Main gate input; low threshold (V_GS(th) = 1.2–2.2 V) enables 3.3 V logic-level drive
5	Drain (exposed pad)	Primary heat path; soldered directly to PCB copper for thermal management
6	Gate (auxiliary)	Second gate terminal for Kelvin connection-bypasses source inductance in gate loop for stable switching

Key Features

Feature	Design Value
Kelvin source configuration	Separate power and signal source paths eliminate gate-loop inductance impact on switching stability
OptiMOS™ 5 process	Reduces Q_g/R_DS(on) ratio by 30% vs. prior generation, improving figure-of-merit for high-frequency SMPS
Enhanced body diode	Soft reverse recovery (Q_rr = 45 nC) minimizes voltage overshoot and EMI during freewheeling
Avalanche-rated	Guaranteed 120 mJ single-pulse E_AS supports reliable operation under transient overcurrent conditions

Applications

Server Voltage Regulator Modules (VRMs)

Industrial DC-DC Converters

Use Scenario: High-density 12 V → 1 V/50 A point-of-load regulation in AI accelerator cards.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck converter with 1 MHz switching frequency.

Use Value: 6.5 mΩ R_DS(on) reduces conduction loss by 22% versus 8.2 mΩ alternatives, lowering thermal load on VRM PCB.

Use Scenario: 24 V input to 5 V/20 A isolated auxiliary supply in PLC backplane power distribution.

IC Role / Device Role / Timing Role: Low-side switch in active clamp forward topology with 300 kHz operation.

Use Value: Kelvin source terminals suppress gate oscillation during fast dV/dt transitions, eliminating need for external gate ferrites.

Automotive ADAS Power Supplies

Telecom Rectifier Modules

Use Scenario: 12 V → 3.3 V/15 A power rail for radar sensor SoCs operating at ambient −40 °C to +125 °C.

IC Role / Device Role / Timing Role: Synchronous rectifier in buck converter with 4.5 V minimum gate drive compatibility.

Use Value: Guaranteed R_DS(on) ≤ 9.5 mΩ at V_GS = 4.5 V ensures stable efficiency across automotive cold-crank conditions.

Use Scenario: 48 V → 12 V/30 A intermediate bus converter in 19-inch telecom rack power shelves.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology.

Use Value: 120 mJ E_AS rating withstands repetitive inductive turn-off stress during fault recovery cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N3LLH6	R_DS(on) = 5.8 mΩ (min), Q_g = 26 nC, no Kelvin source	Lacks dedicated Kelvin gate; higher gate-loop inductance limits >500 kHz stability	Prefer when lowest R_DS(on) dominates and gate drive is robust; avoid in ultra-high-frequency VRMs
ON Semiconductor NTMFS5C673NL	R_DS(on) = 6.7 mΩ, Q_g = 20 nC, DFN5x6 package	Smaller footprint but higher R_thJC (2.0 K/W); limited to ≤35 A continuous in same thermal layout	Select for space-constrained designs where peak current ≤35 A and thermal margin allows higher case temp

Compared with STL220N3LLH6 and NTMFS5C673NL, IPB065N03LGATMA1 uniquely combines Kelvin source routing, 1.2 K/W thermal resistance, and guaranteed 4.5 V drive capability-making it optimal for high-reliability, high-frequency, high-current POL systems requiring both electrical and thermal headroom.

Availability

IPB065N03LGATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, automotive ADAS power supplies, and telecom rectifier modules requiring stable component supply and long-term production continuity.

Supply support for IPB065N03LGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and wafer fabrication infrastructure.

This part belongs to the OptiMOS™ 5 product line, engineered specifically for high-efficiency, high-frequency power conversion in data center, industrial, and automotive applications demanding low R_DS(on), fast switching, and robust thermal performance.

FAQ

What is the maximum recommended gate resistor value for stable 1 MHz operation?

A 2.2 Ω gate resistor is validated for clean 1 MHz switching with minimal overshoot and ringing. Lower values (≤1.5 Ω) increase peak gate current but risk driver stress; higher values (>3.3 Ω) extend switching times and raise switching losses beyond 15% at full load. Layout-dependent parasitics require empirical tuning using the Kelvin gate connection.

Does IPB065N03LGATMA1 support 3.3 V logic-level gate drive?

Yes-its V_GS(th) range of 1.2–2.2 V and guaranteed R_DS(on) ≤ 9.5 mΩ at V_GS = 4.5 V enable reliable enhancement-mode turn-on with 3.3 V microcontroller outputs when paired with appropriate gate buffering. Full 50 A conduction requires ≥4.5 V for minimal R_DS(on).

How is thermal performance affected when the exposed drain pad is not soldered?

Unsoldered drain pad increases R_thJC from 1.2 K/W to >4.5 K/W, limiting continuous current to ≤18 A at T_C = 25 °C. Thermal vias under the pad (≥9×0.3 mm diameter, filled) and 2 oz copper pour are mandatory to achieve rated 50 A performance and maintain T_J < 150 °C.

Is the body diode suitable for synchronous rectification without external control?

No-the body diode is not intended for uncontrolled freewheeling. In synchronous rectification, external gate timing must actively turn on the MOSFET before the body diode conducts. Its soft recovery (Q_rr = 45 nC) only mitigates stress during controlled commutation-not standalone diode operation.

IPB065N03LGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 3

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2400 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 56W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB065N03LGATMA1 FAQ

1.How can I place an order for IPB065N03LGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB065N03LGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB065N03LGATMA1 reliable?

The price and inventory of IPB065N03LGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB065N03LGATMA1 is usually 5 days.

3.What payment methods are accepted for IPB065N03LGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB065N03LGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB065N03LGATMA1?

IPB065N03LGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB065N03LGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB065N03LGATMA1?

For technical support, including IPB065N03LGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB065N03LGATMA1 requirements.

6.How does Aetrix verify that IPB065N03LGATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB065N03LGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB065N03LGATMA1 meets industry standards.

7.What is the process for return or replacement of IPB065N03LGATMA1?

All IPB065N03LGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB065N03LGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB065N03LGATMA1 part is unused and in its original packaging.

Return procedure for IPB065N03LGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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