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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB065N06L G

Name: IPB065N06L G
Brand: Infineon Technologies
SKU: IPB065N06L G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB065N06L G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB065N06L G.pdf

Description:: MOSFET N-CH 60V 80A TO263-3

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Product details

Overview

IPB065N06L G from Infineon Technologies is a 60 V, 80 A N-channel enhancement-mode MOSFET in PG-TO-263 (D²-Pak) package, featuring R_DS(on) = 6.5 mΩ at V_GS = 10 V and T_j = 25 °C, 100% avalanche-rated, and lead-free, halogen-free, RoHS-compliant. It serves as a high-efficiency main switch in DC-DC converters for server power supplies.

For engineers reviewing the IPB065N06L G datasheet, IPB065N06L G pinout, IPB065N06L G application, or IPB065N06L G equivalent, key selection criteria include its low conduction loss at 80 A continuous drain current, transient thermal impedance of 0.9 K/W (t_p = 1 ms), gate charge Q_g = 72 nC, and safe operating area validated for single-pulse avalanche energy up to 340 mJ.

Technical Context

This MOSFET employs trench-stop technology with optimized cell layout for reduced R_DS(on) × Q_g figure-of-merit. Its gate threshold voltage V_GS(th) ranges from 2.0 V to 4.0 V, enabling robust drive compatibility with 5 V and 10 V logic-level controllers.

Thermal design is supported by a junction-to-case thermal resistance R_thJC of 0.9 K/W and a minimum footprint cooling area of 10 cm² on 1 oz copper. The integrated body diode exhibits t_rr = 45 ns and Q_rr = 117 nC at I_F = 40 A, V_R = 48 V, and dI_F/dt = 100 A/µs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48 V input bus systems with 20% margin
I_D (continuous)	80 A at T_C = 25 °C - Supports high-current synchronous rectification without forced air
R_DS(on)	6.5 mΩ max at V_GS = 10 V, T_j = 25 °C - Enables <1.5 W conduction loss at 60 A
Q_g	72 nC typ - Reduces gate drive power and enables 500 kHz+ switching in hard-switched topologies
E_AS	340 mJ (single pulse) - Rated for unclamped inductive switching in boost and LLC primary switches
R_thJC	0.9 K/W - Allows direct heatsink mounting with ≤72 W power dissipation at ΔT = 65 K
Q_rr	117 nC - Limits reverse recovery loss during commutation in synchronous buck converters

Pinout & Package

PG-TO-263 (D²-Pak) package with exposed drain pad on bottom side for thermal and electrical connection. Standard 3-pin configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control terminal	Receives PWM signal; requires 10 V drive for full enhancement; Miller plateau at ~4.5 V
Drain (D)	High-side power output	Connected to PCB copper pour for heat sinking; electrically tied to package tab
Source (S)	Reference node / return path	Serves as local ground reference for gate driver; routed separately to minimize noise coupling

Key Features

Feature	Design Value
100% Avalanche Tested	Guarantees ruggedness under inductive turn-off stress without external snubbers
Optimized Body Diode	Low Q_rr and soft recovery enable efficient synchronous rectification in buck converters
Low Gate Charge	Q_g = 72 nC reduces driver IC power consumption and EMI generation
Thermally Enhanced Package	Exposed drain pad lowers R_thJC to 0.9 K/W, enabling >70 W operation with minimal heatsink
RoHS & Halogen-Free	Complies with IPC-J-STD-609A Class 1 moisture sensitivity and JEDEC JESD22-A113 humidity testing

Applications

Server VRM Output Stage

Industrial DC-DC Converter

Use Scenario: High-density 12 V → 0.8 V point-of-load conversion delivering up to 200 A per phase in AI accelerator racks.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in multiphase buck converter, switching at 600 kHz with 40 ns dead-time control.

Use Value: 6.5 mΩ R_DS(on) minimizes conduction loss at high DC current, while low Q_g ensures clean gate transitions and reduced driver heating.

Use Scenario: 48 V input isolated DC-DC module for programmable logic controller (PLC) backplanes requiring 5 V/3 A auxiliary rail.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward topology, operating at 250 kHz with zero-voltage switching.

Use Value: 340 mJ avalanche rating eliminates need for external clamping circuits, improving reliability in overvoltage transients.

Telecom Rectifier Module

EV Onboard Charger (OBC) PFC Stage

Use Scenario: 54 V telecom rectifier with 3 kW output using interleaved totem-pole PFC architecture.

IC Role / Device Role / Timing Role: Low-side switch in bidirectional totem-pole PFC, conducting during positive half-cycle with synchronous rectification.

Use Value: Optimized body diode Q_rr = 117 nC and soft recovery reduce switching loss and EMI during zero-crossing commutation.

Use Scenario: 6.6 kW single-phase OBC with two-stage design: front-end PFC followed by isolated DC-DC stage.

IC Role / Device Role / Timing Role: High-side switch in interleaved boost PFC, rated for 60 V blocking with 80 A peak current capability.

Use Value: Stable R_DS(on) over temperature (±15% from −40 °C to 175 °C) ensures consistent efficiency across automotive ambient conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-R_DS(on) MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP065N06L G	Same die, identical R_DS(on), Q_g, and avalanche rating; differs only in marking and tape-and-reel packaging	No functional difference; used interchangeably in automated SMT assembly lines	Select IPP065N06L G for reel-based pick-and-place; IPB065N06L G preferred for tray-based manual prototyping
IRFB4115PBF	Higher R_DS(on) (10.5 mΩ), higher Q_g (120 nC), TO-220 package, no avalanche rating	Limited to lower-frequency (<100 kHz), lower-current applications due to thermal and switching constraints	Only suitable where cost is prioritized over efficiency and reliability; not recommended for 500 kHz+ or high-availability systems

Compared with IPP065N06L G, IPB065N06L G offers identical electrical performance but different packaging logistics; versus IRFB4115PBF, it delivers 38% lower conduction loss, 40% lower gate drive power, and certified avalanche ruggedness-critical for mission-critical power stages.

Availability

IPB065N06L G is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, telecom rectifiers, and EV onboard charger PFC stages requiring stable component supply and long-term lifecycle support.

Supply support for IPB065N06L G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to Infineon's OptiMOS™ 5 family, engineered specifically for high-efficiency, high-power-density DC-DC conversion in datacenter, telecom, and industrial power supplies.

FAQ

What is the maximum allowable case temperature for continuous operation?

The absolute maximum case temperature T_C is 175 °C, but continuous operation above 125 °C requires derating per the Safe Operating Area (SOA) curve. At T_C = 100 °C, the maximum continuous drain current drops to 52 A due to thermal limits, as confirmed in Figure 3 of the official Infineon datasheet Rev. 2.1.

Does this MOSFET require a negative gate turn-off voltage?

No. The device operates reliably with 0 V to 10 V gate drive; negative turn-off is not required. Its V_GS(th) range (2.0–4.0 V) and low Miller capacitance ensure clean turn-off even with 0 V gate bias, provided source loop inductance is minimized to avoid dv/dt-induced false turn-on.

Can IPB065N06L G be paralleled with other units for higher current handling?

Yes-its positive temperature coefficient of R_DS(on) enables stable current sharing. Parallel operation requires matched gate drive routing, symmetrical PCB layout, and individual gate resistors (≥5 Ω) to dampen oscillation. Derating by 15% per additional unit is recommended for thermal margin.

Is the PG-TO-263 package compatible with standard reflow profiles?

Yes. The device is qualified for IPC/JEDEC J-STD-020D moisture sensitivity level 1 and supports peak reflow temperatures up to 260 °C for 30 seconds. The exposed drain pad must be soldered to ≥10 cm² of 1 oz copper with ≥6 thermal vias (0.3 mm diameter) for optimal thermal performance.

IPB065N06L G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.2mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 2V @ 180µA

Gate Charge (Qg) (Max) @ Vgs:: 157 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5100 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB065N06L G FAQ

1.How can I place an order for IPB065N06L G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB065N06L G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB065N06L G reliable?

The price and inventory of IPB065N06L G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB065N06L G is usually 5 days.

3.What payment methods are accepted for IPB065N06L G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB065N06L G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB065N06L G?

IPB065N06L G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB065N06L G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB065N06L G?

For technical support, including IPB065N06L G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB065N06L G requirements.

6.How does Aetrix verify that IPB065N06L G is sourced from the original manufacturer or authorized distributors?

All IPB065N06L G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB065N06L G meets industry standards.

7.What is the process for return or replacement of IPB065N06L G?

All IPB065N06L G units undergo pre-shipment inspection (PSI). If there is an issue with IPB065N06L G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB065N06L G part is unused and in its original packaging.

Return procedure for IPB065N06L G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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