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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB065N10N3GATMA1

Name: IPB065N10N3GATMA1
Brand: Infineon Technologies
SKU: IPB065N10N3GATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB065N10N3GATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB065N10N3GATMA1.pdf

Description:: MOSFET N-CH 100V 80A D2PAK

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Inventory:4,885

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Product details

Overview

IPB065N10N3GATMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET optimized for high-frequency switching and synchronous rectification in 100 V power conversion systems. It delivers 6.5 mΩ max R_DS(on) at V_GS = 10 V, 80 A continuous drain current (T_C = 25 °C), and operates up to 175 °C junction temperature. Used in DC-DC converters, motor drives, and industrial SMPS.

For engineers reviewing the IPB065N10N3GATMA1 datasheet, IPB065N10N3GATMA1 pinout, IPB065N10N3GATMA1 application, or IPB065N10N3GATMA1 equivalent, key selection criteria include gate charge × R_DS(on) figure-of-merit, thermal resistance (R_thJC = 1 K/W), avalanche energy rating (E_AS = 160 mJ), and D²PAK package compatibility with high-current PCB layouts.

Technical Context

This OptiMOS™ 3 device employs trench-gate superjunction technology to achieve low conduction and switching losses simultaneously. Its gate threshold voltage (V_GS(th) = 2.0–3.5 V) ensures robust noise immunity while enabling standard 10 V gate drive, and its Q_g = 51–64 nC supports efficient high-frequency operation above 200 kHz.

The integrated body diode exhibits fast reverse recovery (t_rr = 73–146 ns, Q_rr = 139–278 nC) and low forward voltage (V_SD = 1.0–1.2 V at I_F = 80 A), making it suitable for synchronous rectification where diode conduction loss and switching loss must be minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - maximum blocking voltage for 48 V input bus designs with 2× safety margin
R_DS(on), max	6.5 mΩ @ V_GS = 10 V - enables <1 W conduction loss at 40 A in TO-263 footprint
I_D, cont.	80 A @ T_C = 25 °C - supports high-current output stages without parallel devices
E_AS	160 mJ - withstands single-pulse inductive energy in motor drive fault conditions
R_thJC	1 K/W - allows direct heatsink mounting for >100 W power dissipation at ΔT = 100 K
Q_g	51–64 nC - balances gate drive strength and switching speed for 100–500 kHz operation
t_rr	73–146 ns - reduces diode recovery loss and EMI in hard-switched topologies

Pinout & Package

IPB065N10N3GATMA1 uses the PG-TO263-3 (D²PAK) package with exposed drain tab for thermal and electrical connection. The package features gull-wing leads and RoHS-compliant lead plating.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives 10 V logic-level gate drive; low input capacitance (C_iss = 3690–4910 pF) minimizes driver loading
Pin 2 / Tab (Drain)	Main power terminal	Exposed copper tab provides primary thermal path to heatsink and carries full load current
Pin 3 (Source)	Reference node	Serves as return path for load current and gate drive reference; connects to PCB ground plane

Key Features

Feature	Design Value
N-channel, normal level	Operates with standard 10 V gate drivers-no level-shifting required in half-bridge high-side configurations
Excellent Q_g × R_DS(on) FOM	~330 mΩ·nC - benchmark efficiency metric for high-frequency DC-DC converter design
175 °C operating temperature	Enables operation in sealed enclosures or high-ambient environments without derating
Pb-free, halogen-free	Complies with RoHS and IEC 61249-2-21 - meets environmental requirements for industrial and automotive end equipment
JEDEC-qualified	Validated per J-STD-020 and JESD22 for reliability in target applications including motor control and power supplies

Applications

Server VRM

Industrial Motor Drive

Use Scenario: Point-of-load regulation for CPU/GPU core voltage in 1U rack servers.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter, switching at 500 kHz.

Use Value: Low R_DS(on) and fast t_rr reduce conduction and recovery losses, improving efficiency by ≥1.2% at 40 A load.

Use Scenario: Inverter leg switch in 3 kW BLDC motor controller for HVAC compressors.

IC Role / Device Role / Timing Role: High-side and low-side switching element in 6-step commutation topology.

Use Value: 160 mJ E_AS rating and 175 °C T_j support reliable operation under short-circuit and overload transients.

Telecom PSU

EV Onboard Charger

Use Scenario: Primary-side switch in 3.3 kW LLC resonant converter for telecom rectifiers.

IC Role / Device Role / Timing Role: Hard-switched main switch operating at 200–300 kHz with ZVS-assisted turn-on.

Use Value: Low C_oss (646–859 pF) and Q_gd (10–15 nC) minimize capacitive turn-off loss and improve ZVS margin.

Use Scenario: Secondary-side synchronous rectifier in 6.6 kW isolated DC-DC stage of OBC.

IC Role / Device Role / Timing Role: Unidirectional current handling with body diode conduction during dead-time.

Use Value: V_SD = 1.0–1.2 V and low Q_rr reduce dead-time conduction loss and EMI generation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	R_DS(on) = 5.5 mΩ (lower), Q_g = 72 nC (higher), TO-220FP package	Larger footprint, higher gate drive power needed; less suited for high-density D²PAK layouts	Prefer when lower R_DS(on) dominates over layout density and thermal performance
IXFH50N10X3	R_DS(on) = 7.2 mΩ (higher), Q_g = 45 nC (lower), TO-247 package	Higher thermal resistance (R_thJC ≈ 0.5 K/W but larger mechanical size), no surface-mount option	Prefer when gate drive simplicity and ruggedness outweigh board space constraints

Compared with STL220N10F7 and IXFH50N10X3, IPB065N10N3GATMA1 offers optimal balance of low R_DS(on), moderate Q_g, D²PAK thermal performance, and surface-mount manufacturability for high-volume industrial and telecom power designs.

Availability

IPB065N10N3GATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom PSUs, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPB065N10N3GATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ 3 family, engineered specifically for high-efficiency, high-frequency power conversion in industrial, telecom, and computing applications where low R_DS(on) and fast switching are critical.

FAQ

What is the maximum allowable gate-source voltage for IPB065N10N3GATMA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond ±20 V risks permanent gate oxide damage. Recommended gate drive is 10 V for full enhancement, with 4.9 V gate plateau voltage confirmed in gate charge testing. Gate drive circuits must include clamping or zener protection to prevent overshoot during fast switching transitions.

Can IPB065N10N3GATMA1 be used in avalanche mode?

Yes - it is rated for single-pulse avalanche energy of 160 mJ under specified test conditions (I_D = 80 A, R_GS = 25 Ω). This capability supports limited fault tolerance in motor drive and inductive load applications, but repetitive avalanche operation is not guaranteed and requires careful thermal and stress analysis per JEDEC JESD22-A109.

Is the D²PAK package lead-free and RoHS compliant?

Yes - IPB065N10N3GATMA1 uses Pb-free lead plating and complies with RoHS Directive 2011/65/EU. The device also meets halogen-free requirements per IEC 61249-2-21, with chlorine and bromine content below 900 ppm each, verified through material declaration and analytical testing.

How does the body diode performance compare to external Schottky diodes?

The integrated body diode has V_SD = 1.0–1.2 V and t_rr = 73–146 ns at 80 A, which outperforms most 100 V Schottkys in reverse recovery behavior but has higher forward drop than SiC Schottkys. It eliminates discrete diode count and layout complexity in synchronous rectification, though SiC alternatives remain preferred for >300 kHz or >100 °C ambient designs.

IPB065N10N3GATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 90µA

Gate Charge (Qg) (Max) @ Vgs:: 64 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4910 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB065N10N3GATMA1 FAQ

1.How can I place an order for IPB065N10N3GATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB065N10N3GATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB065N10N3GATMA1 reliable?

The price and inventory of IPB065N10N3GATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB065N10N3GATMA1 is usually 5 days.

3.What payment methods are accepted for IPB065N10N3GATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB065N10N3GATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB065N10N3GATMA1?

IPB065N10N3GATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB065N10N3GATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB065N10N3GATMA1?

For technical support, including IPB065N10N3GATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB065N10N3GATMA1 requirements.

6.How does Aetrix verify that IPB065N10N3GATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB065N10N3GATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB065N10N3GATMA1 meets industry standards.

7.What is the process for return or replacement of IPB065N10N3GATMA1?

All IPB065N10N3GATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB065N10N3GATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB065N10N3GATMA1 part is unused and in its original packaging.

Return procedure for IPB065N10N3GATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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