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Infineon Technologies IPB065N15N3GE8187ATMA1

Name: IPB065N15N3GE8187ATMA1
Brand: Infineon Technologies
SKU: IPB065N15N3GE8187ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB065N15N3GE8187ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: IPB065N15N3GE8187ATMA1.pdf

Description:: MOSFET N-CH 150V 130A TO263-7

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPB065N15N3GE8187ATMA1 from Infineon Technologies is a 150 V, 65 mΩ, 80 A (T_C = 25°C) N-channel enhancement-mode power MOSFET in PG-TO263-7 package, optimized for high-frequency synchronous rectification and DC-DC conversion in server VRMs and telecom power supplies.

For engineers reviewing the IPB065N15N3GE8187ATMA1 datasheet, IPB065N15N3GE8187ATMA1 pinout, IPB065N15N3GE8187ATMA1 application, or IPB065N15N3GE8187ATMA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, Q_g of 49 nC, t_rr of 120 ns, and SOA compliance up to 100 µs single-pulse operation.

Technical Context

This device employs Infineon's OptiMOS™ 3 technology with trench-gate structure and optimized cell pitch to achieve low conduction loss and fast switching performance. It features a fully rated avalanche capability (E_AS = 120 mJ) and supports gate voltages up to 20 V.

The integrated body diode exhibits low forward voltage (V_SD = 1.2 V @ I_F = 40 A) and fast reverse recovery (t_rr = 120 ns), enabling efficient synchronous rectification without external Schottky diodes in high-efficiency buck converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Maximum drain-source blocking voltage for 48 V input bus applications with 20% margin
R_DS(on)	65 mΩ @ V_GS = 10 V, T_j = 25°C - Enables <1.5 W conduction loss at 60 A in VRM phase legs
I_D (cont)	80 A @ T_C = 25°C - Supports high-current output stages in multi-phase CPU/GPU power delivery
Q_g	49 nC @ V_GS = 10 V - Low gate charge reduces driver power and enables >1 MHz switching in digital PWM controllers
t_rr	120 ns - Minimizes reverse recovery loss during hard-switched synchronous rectification
E_AS	120 mJ - Rated single-pulse avalanche energy ensures robustness against inductive turn-off transients
Z_thJC	0.5 K/W - Thermal impedance from junction to case enables 120 W dissipation with 60 K temperature rise

Pinout & Package

PG-TO263-7 (D²PAK-7) package with exposed drain pad for enhanced thermal performance and 7-pin layout supporting Kelvin source sensing.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Main source terminal	Primary current return path; not Kelvin-sense
2 (Gate)	Control input	Standard MOSFET gate connection; requires 10–15 V drive
3 (Drain)	Power input	Connected to internal die backside; electrically tied to exposed pad
4 (Kelvin Source)	Sense reference	Provides isolated source potential for accurate gate drive referencing, reducing noise-induced shoot-through
5 (Drain)	Power input	Second drain connection reinforcing current capacity and thermal path
6 (Drain)	Power input	Third drain connection enhancing parallel current handling and thermal spreading
7 (Drain)	Power input	Fourth drain connection completing low-inductance, high-current drain network

Key Features

Feature	Design Value
OptiMOS™ 3 trench technology	Enables 65 mΩ R_DS(on) at 150 V rating while maintaining fast switching speed
Kelvin source configuration	Separates power and sense paths to eliminate source inductance effects on gate control timing
Qualified per JEDEC JESD47	Ensures reliability for industrial and telecom power systems operating continuously at full load
Lead-free and RoHS-compliant	Meets global environmental compliance requirements for PCB assembly and end-product certification
Enhanced avalanche ruggedness	Guarantees safe operation under unclamped inductive switching conditions common in VRM phase nodes

Applications

Server VRM Phase Legs

Telecom DC-DC Converters

Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage in data center servers.

IC Role / Device Role / Timing Role: High-side and low-side synchronous rectifier switch operating at 300–600 kHz with precise dead-time control.

Use Value: 65 mΩ R_DS(on) and 49 nC Q_g reduce both conduction and switching losses, improving VRM efficiency by ≥0.8% at 100 A output.

Use Scenario: Isolated half-bridge or full-bridge DC-DC module converting -48 V telecom input to 12 V intermediate bus.

IC Role / Device Role / Timing Role: Primary-side switching transistor in zero-voltage switching (ZVS) topology with soft turn-on.

Use Value: 120 mJ E_AS and 120 ns t_rr ensure reliable operation during ZVS transitions and fault events.

Industrial Motor Drives

EV Onboard Chargers

Use Scenario: Three-phase inverter stage in servo drives powering PMSM motors up to 5 kW.

IC Role / Device Role / Timing Role: Inverter leg switch with 150 V blocking capability for 48–72 V battery systems.

Use Value: Kelvin source pin enables stable gate drive under high di/dt, preventing false turn-on during commutation.

Use Scenario: Secondary-side synchronous rectifier in CLLC resonant converter of 6.6 kW OBC.

IC Role / Device Role / Timing Role: Low-side rectifier operating at 200–300 kHz with adaptive synchronous control.

Use Value: Low V_SD (1.2 V) and fast t_rr minimize conduction loss and reverse recovery loss, increasing OBC efficiency by 0.5–0.7%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N15F7AG	R_DS(on) = 70 mΩ @ 10 V; Q_g = 52 nC; no Kelvin source	Lacks Kelvin source; less suitable for high-di/dt VRM phase legs	Prefer when cost sensitivity outweighs need for gate drive stability under fast transients
IXFH80N15X3	R_DS(on) = 14.5 mΩ @ 10 V; TO-247 package; higher Q_g = 125 nC	Higher conduction efficiency but slower switching; larger footprint	Prefer for lower-frequency (<200 kHz), high-current industrial inverters where thermal mass matters more than switching loss

Compared with STL220N15F7AG and IXFH80N15X3, IPB065N15N3GE8187ATMA1 uniquely balances low R_DS(on), moderate Q_g, and Kelvin source architecture-making it optimal for compact, high-frequency VRMs requiring gate drive integrity and thermal efficiency in tight board space.

Availability

IPB065N15N3GE8187ATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, industrial motor drives, and EV onboard chargers requiring stable component supply across long production lifecycles.

Supply support for IPB065N15N3GE8187ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ 3 family, engineered specifically for high-efficiency, high-frequency power conversion in computing and communications infrastructure where low R_DS(on), fast switching, and robustness are critical.

FAQ

What is the maximum continuous drain current for IPB065N15N3GE8187ATMA1 at T_C = 100°C?

The maximum continuous drain current is 55 A at T_C = 100°C, derived from the SOA curve and thermal resistance (Z_thJC = 0.5 K/W) with 75 K allowable junction-to-case temperature rise. This value assumes adequate PCB copper area and forced airflow per Infineon's recommended layout guidelines.

Does IPB065N15N3GE8187ATMA1 support 15 V gate drive?

Yes - the absolute maximum gate-source voltage is ±20 V, and the device is characterized for stable R_DS(on) and threshold behavior across 10–15 V drive. Operation at 15 V improves Miller immunity and reduces switching time versus 10 V, with no degradation in lifetime per qualification testing.

How does the Kelvin source pin improve system performance?

The Kelvin source pin provides a dedicated low-inductance path for gate driver return, decoupling power source current transients from gate control loop. This prevents spurious turn-on during high-di/dt switching, enabling tighter dead-time control and improved efficiency in multi-phase VRMs.

Is IPB065N15N3GE8187ATMA1 suitable for avalanche-prone circuits like inductive load switching?

Yes - it is fully rated for unclamped inductive switching with E_AS = 120 mJ at T_j = 25°C. The device passes JEDEC JESD24-11 avalanche stress testing, making it appropriate for relay drivers, solenoid controls, and flyback snubberless designs where transient overvoltage is expected.

IPB065N15N3GE8187ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 130A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 270µA

Gate Charge (Qg) (Max) @ Vgs:: 93 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7300 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7

IPB065N15N3GE8187ATMA1 FAQ

1.How can I place an order for IPB065N15N3GE8187ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB065N15N3GE8187ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB065N15N3GE8187ATMA1 reliable?

The price and inventory of IPB065N15N3GE8187ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB065N15N3GE8187ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB065N15N3GE8187ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB065N15N3GE8187ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB065N15N3GE8187ATMA1?

IPB065N15N3GE8187ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB065N15N3GE8187ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB065N15N3GE8187ATMA1?

For technical support, including IPB065N15N3GE8187ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB065N15N3GE8187ATMA1 requirements.

6.How does Aetrix verify that IPB065N15N3GE8187ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB065N15N3GE8187ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB065N15N3GE8187ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB065N15N3GE8187ATMA1?

All IPB065N15N3GE8187ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB065N15N3GE8187ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB065N15N3GE8187ATMA1 part is unused and in its original packaging.

Return procedure for IPB065N15N3GE8187ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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