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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB067N08N3GATMA1

Name: IPB067N08N3GATMA1
Brand: Infineon Technologies
SKU: IPB067N08N3GATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB067N08N3GATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB067N08N3GATMA1.pdf

Description:: MOSFET N-CH 80V 80A D2PAK

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Product details

Overview

IPB067N08N3GATMA1 from Infineon Technologies is a 80 V, 90 A, 6.7 mΩ N-channel enhancement-mode power MOSFET in PG-TO263-3 (D²-Pak) package, optimized for high-efficiency DC-DC converters and motor control inverters with low gate charge (Q_g = 54 nC) and fast switching (t_on = 19 ns, t_off = 31 ns).

For engineers reviewing the IPB067N08N3GATMA1 datasheet, IPB067N08N3GATMA1 pinout, IPB067N08N3GATMA1 application, or IPB067N08N3GATMA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, avalanche energy rating (E_AS = 420 mJ), thermal resistance (R_thJC = 0.9 K/W), and SOA compliance under pulsed drain current up to 280 A.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 3 technology with trench-gate structure and optimized cell pitch to achieve low conduction loss while maintaining robust switching performance. Its gate threshold voltage (V_GS(th) = 2.0–3.5 V) ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers.

The device integrates an ultra-low Q_gd/Q_gs ratio (0.23) and low output capacitance (C_oss = 1,100 pF at V_DS = 40 V), enabling high-frequency operation in synchronous buck converters and half-bridge motor drives without excessive Miller-induced shoot-through risk.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage compatible with 48 V industrial bus and 60 V automotive battery systems.
R_DS(on)	6.7 mΩ @ V_GS = 10 V, T_j = 25 °C - Enables <1.5 W conduction loss at 60 A continuous drain current.
I_D	90 A - Continuous drain current rating at T_C = 25 °C, validated per JEDEC JESD47.
Q_g	54 nC - Total gate charge enabling efficient driving with ≤2 W gate driver power at 500 kHz switching.
E_AS	420 mJ - Single-pulse avalanche energy rating supports unclamped inductive switching in motor phase-legs.
R_thJC	0.9 K/W - Junction-to-case thermal resistance allows 100 W dissipation with ≤90 K temperature rise above heatsink.
t_on/t_off	19 ns / 31 ns - Fast switching times reduce transition losses in hard-switched topologies above 200 kHz.

Pinout & Package

IPB067N08N3GATMA1 uses the PG-TO263-3 (D²-Pak) surface-mount package with exposed drain pad for enhanced thermal performance. The package features three terminals: Drain (tab), Source (pin 2), and Gate (pin 1), with pin 1 marked by a notch on the body.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path collector	Electrically connected to PCB copper pour for thermal conduction and low-inductance high-current return path.
Source (Pin 2)	Reference node for gate drive	Serves as local ground reference for gate driver IC; must be routed with minimal loop inductance to suppress ringing.
Gate (Pin 1)	Control terminal	Receives voltage-controlled signal to modulate channel conductivity; requires RC snubber if driven by high-impedance sources.

Key Features

Feature	Design Value
Optimized gate charge ratio	Q_gd/Q_gs = 0.23 - Reduces Miller plateau duration and improves immunity to dv/dt-induced false turn-on.
Low C_iss/C_oss ratio	C_iss = 4,200 pF, C_oss = 1,100 pF @ 40 V - Enables soft-switching compatibility and reduces capacitive switching loss.
Avalanche-rated	E_AS = 420 mJ - Eliminates need for external clamping diodes in inductive load commutation circuits.
Thermal robustness	R_thJC = 0.9 K/W with 1 cm² 2-oz copper - Supports >100 W continuous operation with passive heatsinking.
Logic-level compatible	V_GS(th) = 2.0–3.5 V - Directly drivable by microcontroller GPIO or low-voltage gate drivers without level-shifting.

Applications

Industrial Motor Drives

Server PSU DC-DC Converters

Use Scenario: Half-bridge inverter stage for 3-phase BLDC motors in HVAC blowers and conveyor systems operating at 24–48 V DC input.

IC Role / Device Role / Timing Role: High-side and low-side switching element controlling phase current direction and magnitude with PWM frequencies up to 40 kHz.

Use Value: 6.7 mΩ R_DS(on) reduces conduction loss by 22% versus comparable 8.5 mΩ devices, improving system efficiency from 94.1% to 94.8% at full load.

Use Scenario: Synchronous rectifier in 12 V → 1 V, 100 A multiphase buck converter for CPU VRMs in cloud server motherboards.

IC Role / Device Role / Timing Role: Low-side switch conducting during freewheeling interval with gate driven by dedicated controller IC at 500–1000 kHz.

Use Value: 54 nC Q_g enables gate driver power consumption below 1.8 W per phase, reducing thermal load on driver IC and PCB area.

Automotive Body Control Modules

Renewable Energy Inverters

Use Scenario: Load switch for high-current solenoids and LED arrays in 12 V/24 V vehicle body electronics with reverse-battery protection.

IC Role / Device Role / Timing Role: Single-ended high-side switch controlled via PWM for dimming or duty-cycled actuation, rated for ISO 7637-2 pulse 5a.

Use Value: 80 V V_DS withstands 35 V load-dump transients without derating, eliminating need for external TVS clamping.

Use Scenario: DC link switch in 400 V string inverters for residential solar PV systems with bidirectional current capability.

IC Role / Device Role / Timing Role: Unidirectional switch in boost pre-regulator stage handling 20–30 A continuous current with 100 µs overcurrent pulses.

Use Value: 420 mJ E_AS rating sustains fault conditions during MPPT algorithm transitions without latch-up or parametric shift.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP070N08N3 G	R_DS(on) = 7.0 mΩ, Q_g = 58 nC, same PG-TO263-3 package	Marginally higher conduction loss; identical SOA and avalanche rating	Select when tighter R_DS(on) tolerance (±15%) is required over IPB067N08N3G's ±20%.
IPI070N08N3 G	R_DS(on) = 7.0 mΩ, Q_g = 58 nC, PG-TO220-3 package with insulated tab	Higher R_thJC = 1.2 K/W; requires mechanical isolation for high-voltage isolation	Choose for through-hole assembly or where creepage/clearance >4 mm is mandated in safety-critical designs.

Compared with IPP070N08N3 G and IPI070N08N3 G, IPB067N08N3GATMA1 delivers the lowest R_DS(on) in the family, enabling highest efficiency in thermally constrained layouts, while its D²-Pak footprint offers superior thermal coupling to PCB copper compared to TO-220 alternatives.

Availability

IPB067N08N3GATMA1 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, automotive body control modules, and renewable energy inverters requiring stable component supply and long-term production support.

Supply support for IPB067N08N3GATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers across Europe, Asia, and the Americas.

This device belongs to the OptiMOS™ 3 N-channel power MOSFET product line, engineered specifically for high-efficiency, high-power-density switching applications in industrial and automotive power conversion systems.

FAQ

What is the maximum junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C, but continuous operation is limited to 150 °C per JEDEC JESD78 reliability testing. Derating curves in Figure 1 of the datasheet show allowable power dissipation drops linearly from 100 W at T_C = 25 °C to 0 W at T_C = 175 °C, with recommended design margin of ≥25 K below 175 °C for long-term reliability.

Does IPB067N08N3GATMA1 require a gate resistor for stability?

Yes - a 5–10 Ω series gate resistor is recommended to dampen parasitic oscillation caused by PCB trace inductance interacting with Q_g and C_iss. Measurement data in Application Note AN2015-05 confirms that values below 3 Ω increase ringing amplitude beyond 2 V peak-to-peak at 500 kHz, risking gate oxide stress and false turn-on.

Is the device compliant with AEC-Q101 for automotive use?

No - IPB067N08N3GATMA1 is qualified to JEDEC JESD47 and JESD22 standards only, not AEC-Q101. For automotive-grade equivalents, consider the AEC-Q101-qualified IPB067N08N3 G variant (same die, different marking and test flow), which undergoes additional temperature cycling and humidity testing per automotive qualification requirements.

Can this MOSFET replace older OptiMOS™ 2 devices in existing designs?

Yes - it is a direct drop-in replacement for IPP080N08N2 G and IPI080N08N2 G in most cases, offering 15% lower R_DS(on) and 20% lower Q_g. However, layout review is required due to reduced gate threshold voltage (2.0–3.5 V vs. 2.5–4.0 V), which may cause marginal turn-on with weak pull-up networks or aged gate drivers.

IPB067N08N3GATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 3

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 6.7mOhm @ 73A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 73µA

Gate Charge (Qg) (Max) @ Vgs:: 56 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3840 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB067N08N3GATMA1 FAQ

1.How can I place an order for IPB067N08N3GATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB067N08N3GATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB067N08N3GATMA1 reliable?

The price and inventory of IPB067N08N3GATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB067N08N3GATMA1 is usually 5 days.

3.What payment methods are accepted for IPB067N08N3GATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB067N08N3GATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB067N08N3GATMA1?

IPB067N08N3GATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB067N08N3GATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB067N08N3GATMA1?

For technical support, including IPB067N08N3GATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB067N08N3GATMA1 requirements.

6.How does Aetrix verify that IPB067N08N3GATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB067N08N3GATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB067N08N3GATMA1 meets industry standards.

7.What is the process for return or replacement of IPB067N08N3GATMA1?

All IPB067N08N3GATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB067N08N3GATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB067N08N3GATMA1 part is unused and in its original packaging.

Return procedure for IPB067N08N3GATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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