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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB06N03LA

Name: IPB06N03LA
Brand: Infineon Technologies
SKU: IPB06N03LA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB06N03LA

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB06N03LA.pdf

Description:: MOSFET N-CH 25V 50A TO263-3

Quantity:: RFQ Add To RFQ list

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Inventory:3,599

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Product details

Overview

IPB06N03LA from Infineon Technologies is an N-channel logic-level OptiMOS®2 power MOSFET in PG-TO263-3-2 package, rated for 25 V V_DS, 50 A continuous drain current at T_C = 25 °C, and 5.9 mΩ max R_DS(on) at V_GS = 10 V. It serves as a high-efficiency synchronous rectifier or primary-side switch in high-frequency DC/DC converters up to 1 MHz.

For engineers reviewing the IPB06N03LA datasheet, IPB06N03LA pinout, IPB06N03LA application, or IPB06N03LA equivalent, key selection criteria include its 7.6 mΩ typical R_DS(on) at 4.5 V gate drive, 175 °C maximum junction temperature, dv/dt ruggedness (6 kV/µs), low Q_g (17–22 nC), and JEDEC-qualified reliability for industrial power supplies.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low gate charge × R_DS(on) figure-of-merit (FOM), enabling fast switching with minimal conduction and switching losses. Its 1.8 K/W thermal resistance (junction-to-case) supports high-power density layouts on FR4 PCBs with 6 cm² copper area.

The device features a robust body diode with 10 nC reverse recovery charge (Q_rr) and 0.94–1.2 V forward voltage (V_SD) at 50 A, making it suitable for synchronous rectification where diode conduction occurs during dead time. Gate threshold voltage (1.2–2.0 V) ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage in high-side or low-side switch configurations
R_DS(on) max @ V_GS=10 V	5.9 mΩ - Enables ≤147 mW conduction loss at 50 A, critical for <1% efficiency penalty in 12 V input converters
I_D continuous @ T_C=25 °C	50 A - Sustained current capability with adequate heatsinking; limited by bondwire, not die
Q_g total	17–22 nC - Determines gate driver power requirement and switching speed in hard-switched topologies
T_j max	175 °C - Allows operation in sealed enclosures or high-ambient environments without derating below 100 °C ambient
dv/dt rating	6 kV/µs - Withstands rapid voltage transients in buck/boost converters without spurious turn-on
Q_rr	≤10 nC - Minimizes reverse recovery loss and EMI in synchronous rectifier mode

Pinout & Package

IPB06N03LA uses the PG-TO263-3-2 (D²PAK) surface-mount package with exposed drain pad for thermal performance. The three terminals are arranged with Drain connected to the large tab (pins 1 & 2 internally shorted), Source at pin 3, and Gate at pin 1 (isolated lead).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab / Pins 1 & 2)	Main current path collector	Electrically and thermally coupled to PCB copper pour; requires solder mask opening and thermal vias for R_thJC = 1.8 K/W
Source (Pin 3)	Reference node for gate drive and current sensing	Low-inductance connection essential for stable gate control and accurate current monitoring in synchronous FETs
Gate (Pin 1 lead)	Control electrode	Isolated signal input requiring <2.7 Ω series resistance to damp ringing; sensitive to ESD (±20 V absolute max)

Key Features

Feature	Design Value
Logic-level gate drive compatibility	Turns fully on with 4.5 V supply - eliminates need for gate boosters in 5 V or 3.3 V controller designs
Optimized FOM (Q_g × R_DS(on))	~104 nC·mΩ - balances switching loss vs. conduction loss for 300 kHz–1 MHz DC/DC operation
JEDEC qualification	Complies with J-STD-20 and JESD22 - validated for reflow, humidity, and temperature cycling in production assembly
175 °C rated junction	Enables full-rated current at 100 °C ambient without derating - reduces thermal margin overhead in compact power modules
dv/dt ruggedness	6 kV/µs - Prevents false triggering during fast edge transitions in half-bridge or LLC resonant circuits

Applications

Server VRM Power Stage

Industrial 48 V–12 V DC/DC Converter

Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage (0.8–1.2 V @ up to 200 A).

IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating in continuous conduction mode with 500 kHz–1 MHz switching frequency.

Use Value: 5.9 mΩ R_DS(on) minimizes I²R loss at high load; 175 °C rating allows sustained operation under transient load spikes without thermal shutdown.

Use Scenario: Isolated or non-isolated point-of-load converter in programmable logic controller (PLC) backplane power.

IC Role / Device Role / Timing Role: Primary-side switch in active clamp forward or synchronous buck topology with 300–600 kHz PWM.

Use Value: 22 nC max Q_g enables efficient drive with integrated gate drivers; JEDEC qualification ensures long-term reliability in unattended industrial deployments.

Automotive ADAS Camera Power Supply

Telecom 48 V Intermediate Bus Converter

Use Scenario: Compact 48 V–5 V buck converter powering image sensor and ISP in rear-view or surround-view camera modules.

IC Role / Device Role / Timing Role: High-side switch with 100% duty cycle capability and fast turn-off for precise current limiting.

Use Value: 6 kV/µs dv/dt rating prevents misfiring during load dump transients; RoHS-compliant Pb-free plating meets automotive ELV directive.

Use Scenario: High-efficiency 48 V–12 V intermediate bus converter feeding downstream POLs in 5G base station RF units.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side synchronous rectification stage with zero-voltage switching assist.

Use Value: 10 nC Q_rr reduces reverse recovery loss and associated EMI; 1.8 K/W R_thJC supports forced-air cooling in dense telecom chassis.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N3LLH6	30 V V_DS, 4.5 mΩ R_DS(on) @ 10 V, 200 A pulsed rating, H2PAK-2 package	Higher current capability but larger footprint; lacks dv/dt rating documentation	Preferred when peak current >350 A is required and board space permits larger package
IRL3803PbF	30 V V_DS, 6.0 mΩ R_DS(on) @ 10 V, TO-220AB package, no JEDEC qualification data published	Through-hole mounting only; higher R_thJA limits power density in SMT designs	Acceptable for prototyping or low-volume industrial supplies where thermal constraints are relaxed

Compared with STL220N3LLH6 and IRL3803PbF, IPB06N03LA offers superior thermal resistance (1.8 K/W vs. ≥2.5 K/W), documented dv/dt immunity, and JEDEC qualification-making it the preferred choice for high-reliability, high-frequency SMT power stages where layout density and transient robustness are critical.

Availability

IPB06N03LA is available at Aetrix Electronics and suitable for server VRM power stages, industrial 48 V–12 V DC/DC converters, automotive ADAS camera power supplies, and telecom intermediate bus converters requiring stable component supply and long-lifecycle support.

Supply support for IPB06N03LA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and R&D centers.

The OptiMOS®2 product line targets high-efficiency, high-frequency power conversion in server, telecom, and industrial applications-designed specifically to reduce both conduction and switching losses in synchronous rectifiers and primary-side switches.

FAQ

What is the maximum gate-source voltage for safe operation?

The absolute maximum gate-source voltage is ±20 V per datasheet Rev. 1.6. Operation above +15 V or below –5 V is restricted to duty cycles less than 0.25 and junction temperature below 150 °C. For reliable long-term use, gate drive should be clamped to 12 V max with appropriate series resistance and TVS protection.

Can IPB06N03LA be used in avalanche mode?

Yes-it is rated for single-pulse avalanche energy of 225 mJ at I_D = 45 A with R_GS = 25 Ω. However, repetitive avalanche operation is not specified or guaranteed. Designers must verify thermal limits and ensure gate remains biased during avalanche events to avoid secondary breakdown.

Does this MOSFET require a gate resistor, and what value is recommended?

A gate resistor is mandatory to control dV/dt and suppress oscillation. For 25 A switching with a 2.7 Ω driver output impedance, a 2.7 Ω external series resistor yields optimal trade-off between switching speed and ringing suppression. Values below 1.5 Ω increase EMI risk; above 10 Ω significantly slows turn-on and increases switching loss.

How does the R_DS(on) change over temperature?

R_DS(on) increases linearly with junction temperature: from 4.9 mΩ typ at 25 °C to ~7.2 mΩ at 125 °C and ~8.5 mΩ at 175 °C (per Figure 9). This positive temperature coefficient provides inherent current sharing in paralleled devices and improves thermal stability in high-current designs.

IPB06N03LA Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.9mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 40µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2653 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 83W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB06N03LA FAQ

1.How can I place an order for IPB06N03LA through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB06N03LA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB06N03LA reliable?

The price and inventory of IPB06N03LA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB06N03LA is usually 5 days.

3.What payment methods are accepted for IPB06N03LA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB06N03LA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB06N03LA?

IPB06N03LA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB06N03LA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB06N03LA?

For technical support, including IPB06N03LA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB06N03LA requirements.

6.How does Aetrix verify that IPB06N03LA is sourced from the original manufacturer or authorized distributors?

All IPB06N03LA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB06N03LA meets industry standards.

7.What is the process for return or replacement of IPB06N03LA?

All IPB06N03LA units undergo pre-shipment inspection (PSI). If there is an issue with IPB06N03LA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB06N03LA part is unused and in its original packaging.

Return procedure for IPB06N03LA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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