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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB06N03LA G

Name: IPB06N03LA G
Brand: Infineon Technologies
SKU: IPB06N03LA G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB06N03LA G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB06N03LA G.pdf

Description:: MOSFET N-CH 25V 50A TO263-3

Quantity:: RFQ Add To RFQ list

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Inventory:9,018

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Product details

Overview

IPB06N03LA G from Infineon Technologies is an N-channel logic-level OptiMOS®2 power MOSFET in PG-TO263-3-2 package, rated for 25 V V_DS, 50 A continuous drain current at T_C = 25 °C, and 5.9 mΩ max R_DS(on) at V_GS = 10 V. It features dv/dt ruggedness, 175 °C operation, and is optimized for high-frequency DC/DC converters.

For engineers reviewing the IPB06N03LA G datasheet, IPB06N03LA G pinout, IPB06N03LA G application, or IPB06N03LA G equivalent, key selection criteria include its low gate charge × R_DS(on) figure of merit (FOM), thermal resistance of 1.8 K/W (junction-to-case), and robust avalanche energy rating of 225 mJ.

Technical Context

This device employs a trench-based silicon MOSFET structure with optimized cell pitch and gate oxide design to achieve low R_DS(on) and fast switching. Its gate threshold voltage (1.2–2.0 V typ) ensures reliable turn-on with 3.3 V and 5 V logic drivers.

The integrated body diode exhibits low forward voltage (0.94–1.2 V at 50 A, 25 °C) and minimal reverse recovery charge (≤10 nC), supporting synchronous rectification in buck converters and reducing switching losses in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage for low-voltage power stages (e.g., 12 V input rails)
R_DS(on) max	5.9 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 40 A, critical for high-current POL converters
Q_g total	17–22 nC - Low gate drive energy supports >1 MHz switching without excessive driver loss
E_AS	225 mJ - Withstands single-pulse inductive energy in non-clamped flyback or motor drive fault conditions
R_thJC	1.8 K/W - Enables direct heatsink mounting for high-power density thermal management
dv/dt rating	6 kV/µs - Ensures immunity to parasitic turn-on in fast-switching half-bridge configurations
T_j max	175 °C - Supports operation in sealed industrial enclosures without derating at full load

Pinout & Package

PG-TO263-3-2 (D²PAK) package with exposed drain pad for thermal and electrical connection. Three terminals: Drain (tab + pin 2), Source (pin 1), Gate (pin 3).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (low-side reference)	Connected to ground or low-side switch node; carries full load current and must be routed with low-inductance copper
Pin 2 (Drain)	Drain terminal (high-side output)	Exposed metal tab - electrically and thermally connected to drain; requires insulated heatsink or direct mounting
Pin 3 (Gate)	Control input	High-impedance MOSFET gate; sensitive to ESD and ringing - requires local RC snubber and short trace routing

Key Features

Feature	Design Value
Logic-level gate drive	Turns on fully at V_GS ≥ 4.5 V - compatible with standard 5 V microcontrollers and PWM controllers without level-shifting
Low Q_g × R_DS(on) FOM	~104 nC·mΩ - balances switching and conduction loss for optimal efficiency in 300 kHz–2 MHz DC/DC designs
Robust body diode	Q_rr ≤ 10 nC, V_SD ≤ 1.2 V - reduces dead-time losses and enables efficient synchronous rectification
JEDEC-qualified reliability	Qualified per J-STD-20/JESD22 - validated for reflow, temperature cycling, and humidity exposure in industrial production

Applications

Server VRMs

Automotive ADAS Power Supplies

Use Scenario: Point-of-load regulation for CPU/GPU core voltage in 1U rack servers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck converter with >50 A per phase.

Use Value: 5.9 mΩ R_DS(on) and 1.8 K/W R_thJC enable compact thermal design while maintaining >92% efficiency at 40 A.

Use Scenario: Power supply for radar sensor modules requiring stable 3.3 V/5 V from 12 V battery rail.

IC Role / Device Role / Timing Role: Low-side switch in isolated flyback or buck controller with tight transient response.

Use Value: 175 °C rating and 225 mJ E_AS ensure reliability under automotive load-dump and cold-crank conditions.

Industrial PLC I/O Modules

USB-C PD Fast Charging

Use Scenario: Solid-state relay replacement for 24 V DC output switching in programmable logic controllers.

IC Role / Device Role / Timing Role: Low-side load switch controlling solenoids, valves, or indicator LEDs.

Use Value: Logic-level gate and 50 A pulsed rating support inrush current handling up to 350 A without external protection.

Use Scenario: Secondary-side synchronous rectifier in 65 W USB-C PD adapter.

IC Role / Device Role / Timing Role: Synchronous FET replacing Schottky diode in QR flyback topology.

Use Value: Q_g(sync) = 15–19 nC and low V_SD reduce conduction and switching losses, improving efficiency by ~1.2% over discrete diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL110N3LLH6	R_DS(on) = 3.3 mΩ @ 10 V, but higher Q_g (34 nC); TO-263 package	Better conduction loss, but higher gate drive loss limits >1 MHz use	Prefer for lower-frequency, high-current applications where thermal margin exceeds 1.8 K/W
IRLHS6342TRPBF	R_DS(on) = 7.5 mΩ @ 4.5 V, smaller 2 mm × 2 mm PQFN package, R_thJC = 3.5 K/W	Smaller footprint but higher thermal resistance - unsuitable for >25 A continuous without aggressive PCB cooling	Prefer for space-constrained, medium-current designs (<20 A) with limited board area

Compared with STL110N3LLH6 and IRLHS6342TRPBF, IPB06N03LA G delivers the best balance of low R_DS(on), moderate Q_g, and proven thermal performance in D²PAK - making it optimal for industrial and server DC/DC converters operating between 300 kHz and 1.5 MHz.

Availability

IPB06N03LA G is available at Aetrix Electronics and suitable for server VRMs, automotive ADAS power supplies, and industrial PLC I/O modules requiring stable component supply and long-term manufacturability.

Supply support for IPB06N03LA G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the OptiMOS®2 family - designed specifically for high-efficiency, high-frequency DC/DC conversion in computing, industrial, and automotive power systems.

FAQ

Is IPB06N03LA G suitable for synchronous rectification in a 65 W USB-C PD adapter?

Yes. Its low R_DS(on) (5.9 mΩ), low Q_g(sync) (15–19 nC), and fast body diode (Q_rr ≤ 10 nC) make it well-suited for secondary-side synchronous rectification in QR flyback topologies. Measured efficiency gains exceed 1.1% versus Schottky diodes at full load.

What is the maximum recommended gate resistor for hard-switching at 1 MHz?

A gate resistor of 2.7 Ω is specified in the datasheet for 1 MHz testing (t_d(on) = 11–16 ns). For reliable operation, keep R_G between 1.5 Ω and 3.3 Ω using a gate driver capable of ±2 A peak current to avoid oscillation and ensure clean turn-on/turn-off.

Does IPB06N03LA G require a Kelvin source connection for precision current sensing?

No. It does not feature a dedicated Kelvin source pin. For accurate current monitoring, use external shunt resistors or current-sense amplifiers on the source path - the standard three-pin configuration supports only main-source return.

Can this MOSFET be used in a half-bridge configuration without external bootstrap diode?

Yes, when paired with a dedicated high-side gate driver (e.g., IRS21844) that integrates bootstrap charging. The device's 6 kV/µs dv/dt rating and logic-level gate ensure robust operation in high-side position, provided layout minimizes source inductance and gate loop area.

IPB06N03LA G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.9mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 40µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2653 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 83W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB06N03LA G FAQ

1.How can I place an order for IPB06N03LA G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB06N03LA G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB06N03LA G reliable?

The price and inventory of IPB06N03LA G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB06N03LA G is usually 5 days.

3.What payment methods are accepted for IPB06N03LA G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB06N03LA G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB06N03LA G?

IPB06N03LA G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB06N03LA G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB06N03LA G?

For technical support, including IPB06N03LA G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB06N03LA G requirements.

6.How does Aetrix verify that IPB06N03LA G is sourced from the original manufacturer or authorized distributors?

All IPB06N03LA G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB06N03LA G meets industry standards.

7.What is the process for return or replacement of IPB06N03LA G?

All IPB06N03LA G units undergo pre-shipment inspection (PSI). If there is an issue with IPB06N03LA G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB06N03LA G part is unused and in its original packaging.

Return procedure for IPB06N03LA G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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