Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB06N03LAT

Name: IPB06N03LAT
Brand: Infineon Technologies
SKU: IPB06N03LAT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPB06N03LAT

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB06N03LAT.pdf

Description:: MOSFET N-CH 25V 50A TO263-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,349

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPB06N03LAT from Infineon Technologies is an N-channel logic-level OptiMOS®2 power MOSFET in PG-TO263-3-2 package, rated for 25 V V_DS, 50 A continuous drain current at T_C = 25 °C, and 5.9 mΩ max R_DS(on) at V_GS = 10 V. It features dv/dt ruggedness, 175 °C operation, and is optimized for high-frequency DC/DC converters.

For engineers reviewing the IPB06N03LAT datasheet, IPB06N03LAT pinout, IPB06N03LAT application, or IPB06N03LAT equivalent, key selection criteria include gate charge (Q_g = 17–22 nC), thermal resistance (R_thJC = 1.8 K/W), reverse diode forward voltage (V_SD = 0.94–1.2 V), and avalanche energy rating (E_AS = 225 mJ).

Technical Context

This device employs a trench-based silicon process to achieve low R_DS(on) × Q_g figure-of-merit (FOM) and enhanced switching efficiency. Its logic-level gate threshold (V_GS(th) = 1.2–2.0 V typ.) enables direct drive from 3.3 V or 5 V controllers without level-shifting.

Designed for synchronous rectification and high-side/low-side switching, it supports fast switching (t_r = 30–38 ns, t_f = 4.4–6.6 ns) with controlled dv/dt immunity (6 kV/µs) and robust unclamped inductive switching capability (I_AS up to 45 A).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage for 12 V input rail systems with margin
R_DS(on) max	5.9 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 40 A
Q_g	17–22 nC - Determines gate driver power and switching speed trade-off
R_thJC	1.8 K/W - Allows 83 W power dissipation with ≤150 K case-to-junction delta
E_AS	225 mJ - Supports reliable operation under inductive load turn-off stress
V_GS(th)	1.2–2.0 V - Ensures full enhancement with standard logic-level MCU GPIOs
I_D cont	50 A @ T_C = 25 °C - Rated for high-current POL converter output stages

Pinout & Package

PG-TO263-3-2 (D²PAK) package with exposed drain pad for thermal performance; 3-terminal configuration: Drain (tab + pin 2), Source (pin 1), Gate (pin 3).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path for channel current	Low-inductance connection point for source loop minimization in SMPS layouts
Pin 2 (Drain)	Main current-carrying terminal (bonded to tab)	Thermally coupled to PCB copper pour; primary heat extraction path
Pin 3 (Gate)	Control electrode for channel modulation	High-impedance input requiring <22 nC charge for full turn-on; sensitive to ESD

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V - eliminates need for gate driver IC in 3.3 V/5 V control systems
Low R_DS(on) × Q_g FOM	~104 mΩ·nC - balances conduction and switching losses for >500 kHz DC/DC operation
dv/dt ruggedness	6 kV/µs - prevents false turn-on during fast voltage transients in half-bridge topologies
175 °C junction rating	Enables derating-free operation in sealed enclosures or high ambient industrial environments
Integrated body diode	V_SD = 0.94–1.2 V @ 50 A - suitable for synchronous rectification with low reverse recovery charge (Q_rr ≤ 10 nC)

Applications

Server VRM Output Stage

Automotive DC/DC Converter

Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage in data center servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 500–1000 kHz switching frequency.

Use Value: 5.9 mΩ R_DS(on) and 225 mJ E_AS enable >95% efficiency and robust fault handling under transient load steps.

Use Scenario: 12 V to 5 V/3.3 V step-down converter powering ADAS sensors and infotainment ECUs.

IC Role / Device Role / Timing Role: Primary switch in isolated or non-isolated buck regulator meeting AEC-Q101 stress requirements.

Use Value: 175 °C rating and JEDEC qualification ensure reliability across automotive temperature range (-40 to 125 °C ambient).

Industrial PLC Power Supply

USB-C PD Fast Charging

Use Scenario: Compact, convection-cooled 24 V to 5 V/12 V auxiliary supply in programmable logic controller chassis.

IC Role / Device Role / Timing Role: High-side switch in active clamp or flyback topology with tight thermal constraints.

Use Value: R_thJC = 1.8 K/W allows 50 A operation on minimal PCB copper, reducing heatsink dependency.

Use Scenario: Synchronous rectifier in 100 W USB-C Power Delivery adapter secondary side.

IC Role / Device Role / Timing Role: Low-V_DS MOSFET replacing Schottky diode to reduce conduction loss and improve thermal profile.

Use Value: V_SD = 0.94 V and Q_rr ≤ 10 nC minimize reverse recovery loss and EMI during zero-voltage switching transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N3LLH6	R_DS(on) = 2.2 mΩ @ 10 V, but 30 V rating and DFN5x6 package - lower R_thJA but no exposed drain tab	Better for space-constrained, high-density board layouts; less suited for high-power thermal sinking	Prefer when footprint size and R_DS(on) dominate over thermal mass and mounting rigidity
IRLHS6342TRPBF	20 V rating, R_DS(on) = 4.5 mΩ @ 4.5 V, SOT-23 package - lower current (12 A) and power (2.5 W)	Targeted at low-power load switches and battery protection, not high-current POL converters	Select only for sub-15 A, low-voltage (<12 V) applications where gate drive simplicity outweighs current capacity

Compared with STL220N3LLH6 and IRLHS6342TRPBF, IPB06N03LAT uniquely combines 25 V rating, 50 A current capability, TO263 thermal interface, and logic-level drive in a single package - making it optimal for mid-power industrial and computing DC/DC stages where thermal management and ruggedness are critical.

Availability

IPB06N03LAT is available at Aetrix Electronics and suitable for server VRMs, automotive DC/DC converters, and industrial PLC power supplies requiring stable component supply and long-term production continuity.

Supply support for IPB06N03LAT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon MOSFET and GaN technology.

This part belongs to the OptiMOS®2 logic-level power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing, telecom, and automotive power systems.

FAQ

Is IPB06N03LAT pin-compatible with IPB06N03LA?

Yes - IPB06N03LAT is the tape-and-reel variant of IPB06N03LA, sharing identical electrical specifications, pinout, package (PG-TO263-3-2), and marking (06N03LA). The 'T' suffix denotes packaging format only, not functional differentiation.

What is the maximum recommended gate resistor for hard-switching applications?

A gate resistor of 2.7 Ω is validated in the datasheet for 15 V drive and 25 A load (t_d(on) = 11–16 ns). For 4.5 V logic-level drive, use 1–2 Ω to ensure sufficient dV/dt control while maintaining <20 ns rise time and avoiding oscillation.

Does this MOSFET require a negative gate turn-off voltage?

No - the device is rated for ±20 V gate-source voltage, but negative turn-off is not required. Standard 0 V to 10 V (or 0 V to 4.5 V) switching suffices due to its low V_GS(th) and inherent dv/dt immunity (6 kV/µs).

Can IPB06N03LAT be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (increases with T_j) enables stable current sharing. Layout must ensure matched gate drive paths and symmetrical thermal coupling; derate total current by 15% for two devices in parallel per Infineon application note AN2002.

IPB06N03LAT Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.9mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 40µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2653 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 83W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB06N03LAT FAQ

1.How can I place an order for IPB06N03LAT through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB06N03LAT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB06N03LAT reliable?

The price and inventory of IPB06N03LAT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB06N03LAT is usually 5 days.

3.What payment methods are accepted for IPB06N03LAT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB06N03LAT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB06N03LAT?

IPB06N03LAT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB06N03LAT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB06N03LAT?

For technical support, including IPB06N03LAT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB06N03LAT requirements.

6.How does Aetrix verify that IPB06N03LAT is sourced from the original manufacturer or authorized distributors?

All IPB06N03LAT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB06N03LAT meets industry standards.

7.What is the process for return or replacement of IPB06N03LAT?

All IPB06N03LAT units undergo pre-shipment inspection (PSI). If there is an issue with IPB06N03LAT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB06N03LAT part is unused and in its original packaging.

Return procedure for IPB06N03LAT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.