Infineon Technologies IPB06N03LB

Overview

IPB06N03LB from Infineon Technologies is an N-channel logic-level OptiMOS®2 power MOSFET in PG-TO263-3 (D²PAK) package, rated for 30 V V_DS, 6.3 mΩ R_DS(on) at 10 V_GS, 50 A continuous drain current, and 175 °C junction operation-optimized for high-frequency DC/DC converters in server VRMs and POL modules.

For engineers reviewing the IPB06N03LB datasheet, IPB06N03LB pinout, IPB06N03LB application, or IPB06N03LB equivalent, key selection criteria include its low gate charge × R_DS(on) figure-of-merit (FOM), dv/dt ruggedness (6 kV/µs), 1.8 K/W R_thJC, and integrated body diode with Q_rr ≤ 10 nC for synchronous rectification.

Technical Context

This device employs a trench-gate silicon process optimized for low conduction and switching losses in hard-switched topologies. Its logic-level gate threshold (1.2–2.0 V) enables direct drive from 3.3 V or 5 V controllers, while the 16–22 nC total gate charge supports efficient operation at >500 kHz switching frequencies.

The MOSFET features fully rated avalanche capability (E_AS = 164 mJ), robust dv/dt immunity up to 6 kV/µs, and thermal design support via low junction-to-case resistance (1.8 K/W) on standard FR4 PCBs with 6 cm² copper area-enabling compact thermal management in space-constrained power stages.

Key Specifications

Pinout & Package

IPB06N03LB uses the PG-TO263-3 (D²PAK) surface-mount package with exposed drain pad for thermal and electrical performance. The package has three terminals: Drain (tab and pins 2+3), Source (pin 1), and Gate (pin 4).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with STL110N3LLH6 and IRL3803PBF, IPB06N03LB delivers superior high-frequency efficiency due to its lower Q_g × R_DS(on) FOM and tighter thermal resistance-making it optimal for compact, high-switching-frequency POL and telecom converters where board space and thermal headroom are constrained.

Availability

IPB06N03LB is available at Aetrix Electronics and suitable for server point-of-load regulators, industrial motor drive half-bridges, and telecom DC/DC converters requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for IPB06N03LB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with leadership in silicon and wide-bandgap technologies.

The OptiMOS®2 product line targets high-efficiency, high-frequency power conversion-designed specifically for server VRMs, telecom power supplies, and motor control applications demanding low R_DS(on), fast switching, and ruggedness.

FAQ

What is the maximum continuous drain current for IPB06N03LB at 100 °C case temperature?

The maximum continuous drain current is 50 A at T_C = 100 °C, limited by bondwire capacity-not thermal constraints-as confirmed in the datasheet's "Maximum ratings" table. At this condition, junction temperature remains within 175 °C limit when R_thJC = 1.8 K/W is maintained.

Does IPB06N03LB support gate drive from a 3.3 V microcontroller without level shifting?

Yes. With a gate threshold voltage of 1.2–2.0 V and full enhancement at V_GS ≥ 4.5 V, IPB06N03LB achieves R_DS(on) ≤ 9.3 mΩ at 30 A with 4.5 V drive-enabling direct interface to 3.3 V logic outputs when paired with appropriate gate resistor and layout to suppress ringing.

How does the body diode performance compare to discrete Schottky alternatives in synchronous rectification?

The integrated body diode has V_SD = 0.92–1.2 V at 50 A and Q_rr ≤ 10 nC, offering lower reverse recovery loss than standard silicon diodes but higher forward drop than 0.5 V Schottkys. It eliminates external component count and layout complexity, making it optimal where moderate V_F is acceptable for cost and size savings.

Is IPB06N03LB suitable for avalanche-prone circuits like non-clamped inductive switching?

Yes. It is fully specified for single-pulse avalanche with E_AS = 164 mJ at I_D = 50 A and R_GS = 25 Ω. This rating validates safe operation in flyback, boost, and LLC resonant converters where inductive energy must be absorbed internally without external clamping.