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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB06N03LB G

Name: IPB06N03LB G
Brand: Infineon Technologies
SKU: IPB06N03LB G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB06N03LB G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB06N03LB G.pdf

Description:: MOSFET N-CH 30V 50A D2PAK

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Product details

Overview

IPB06N03LB from Infineon Technologies is a 30 V, 50 A N-channel logic-level OptiMOS®2 power MOSFET in PG-TO263-3 (D²PAK) package, featuring 6.3 mΩ max R_DS(on) at V_GS = 10 V, 1.8 K/W thermal resistance (junction-to-case), and 175 °C maximum operating temperature. It is engineered for high-frequency DC/DC converters where low conduction loss, fast switching, and robust dv/dt immunity are critical.

For engineers reviewing the IPB06N03LB datasheet, IPB06N03LB pinout, IPB06N03LB application, or IPB06N03LB equivalent, key selection criteria include its gate charge × R_DS(on) figure-of-merit (FOM), 6 kV/µs dv/dt rating, 164 mJ single-pulse avalanche energy, and compatibility with 4.5 V logic-level drive in synchronous rectification and POL converter topologies.

Technical Context

This device employs a trench-based silicon process optimized for low R_DS(on) and minimized gate charge. Its 22 nC total gate charge (Q_g) and 6.4 nC gate-to-drain charge (Q_gd) support efficient hard-switching up to several hundred kHz. The integrated body diode exhibits 10 nC reverse recovery charge (Q_rr) and 0.92–1.2 V forward voltage at 50 A, enabling use in synchronous FET roles without external Schottky replacement.

The MOSFET is fully rated for 175 °C junction operation and qualified per JEDEC standards for industrial and automotive power supply applications. Its 1.8 K/W R_thJC enables high-power density mounting on 40 mm × 40 mm FR4 PCBs with 6 cm² copper area, delivering 83 W power dissipation at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 12 V and 24 V input DC/DC stages
R_DS(on), max	6.3 mΩ @ V_GS = 10 V - Enables ≤158 mW conduction loss at 50 A continuous current
I_D, cont	50 A @ T_C = 25 °C - Sustained output current capability with standard heatsinking
Q_g	16–22 nC - Determines gate driver power requirement and switching speed in hard-switched converters
E_AS	164 mJ - Withstands single-pulse inductive energy during overcurrent or short-circuit events
dv/dt rating	6 kV/µs - Resists false turn-on in high-di/dt synchronous buck or half-bridge configurations
T_j,max	175 °C - Supports operation in sealed enclosures or high-ambient industrial environments

Pinout & Package

IPB06N03LB uses the PG-TO263-3 (D²PAK) surface-mount package with exposed drain pad for thermal and electrical connection. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives logic-level (≥4.5 V) drive signal; 1.2 Ω gate resistance limits ringing
Pin 2 (Drain)	High-side power node	Exposed copper tab - must be soldered to large PCB copper area for thermal and current path
Pin 3 (Source)	Reference node / return path	Connects to power ground or low-side switch source; defines gate drive reference

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V - compatible with 3.3 V and 5 V microcontrollers without level-shifting
Low Q_g × R_DS(on) FOM	~139 mΩ·nC - balances switching loss and conduction loss for optimal efficiency in 300–1000 kHz converters
Robust avalanche capability	164 mJ single-pulse E_AS - eliminates need for external snubbers in non-isolated topologies
Enhanced dv/dt immunity	6 kV/µs rating - prevents spurious turn-on during fast voltage transients across drain-source
Thermal performance	1.8 K/W R_thJC - enables >70 W sustained power handling with minimal heatsink footprint

Applications

Server VRM

Industrial DC/DC Converter

Use Scenario: Point-of-load (POL) regulation for CPU/GPU core voltage in 1U rack servers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck converter with 500 kHz–1 MHz switching frequency.

Use Value: 6.3 mΩ R_DS(on) and 22 nC Q_g reduce both conduction and switching losses, improving full-load efficiency by ≥1.2% vs. legacy MOSFETs.

Use Scenario: Isolated 24 V to 5 V/12 V DC/DC module for PLC I/O power rails.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or asymmetrical half-bridge topology.

Use Value: 175 °C T_j,max and 164 mJ E_AS ensure reliable operation under overload and ambient temperatures up to 85 °C.

Automotive Body Control Module

Telecom Rectifier

Use Scenario: Load switching and reverse polarity protection in 12 V battery-fed BCM sub-systems.

IC Role / Device Role / Timing Role: Low-side high-current switch controlling solenoids, relays, and LED arrays.

Use Value: Logic-level gate threshold (1.2–2.0 V) ensures clean turn-on with automotive MCU GPIOs; 50 A I_D supports peak inrush currents.

Use Scenario: Secondary-side synchronous rectifier in 48 V telecom rectifier modules.

IC Role / Device Role / Timing Role: Synchronous FET replacing Schottky diodes in LLC resonant converter output stage.

Use Value: 10 nC Q_rr and 0.92 V V_SD minimize reverse recovery loss and forward conduction loss, raising efficiency above 96% at 20 A load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N3LLH6	30 V, 220 A, 2.2 mΩ R_DS(on), DFN8 5×6 mm package, higher current but larger footprint	Targeted at higher-current POLs requiring >100 A per phase; not drop-in due to different package and pinout	Select when board space allows larger package and system requires <2 mΩ conduction loss at 100 A
IRL3803PBF	30 V, 68 A, 8.0 mΩ R_DS(on), TO-220AB package, higher R_DS(on) and thermal resistance (R_thJC = 2.5 K/W)	Suitable for lower-frequency (<200 kHz), lower-density designs where through-hole mounting is preferred	Select only if thermal budget permits higher junction rise or TO-220 mechanical integration is mandatory

Compared with STL220N3LLH6 and IRL3803PBF, IPB06N03LB delivers optimal balance of low R_DS(on), compact D²PAK footprint, and proven 175 °C reliability-making it preferred for space-constrained, high-frequency industrial and telecom DC/DC converters where thermal management and gate drive simplicity are critical.

Availability

IPB06N03LB is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, and automotive body control modules requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for IPB06N03LB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The OptiMOS®2 product line was developed specifically for high-efficiency, high-frequency power conversion in server, telecom, and industrial SMPS applications-emphasizing low FOM, robustness, and logic-level drivability.

FAQ

What is the maximum recommended gate drive voltage for IPB06N03LB?

The absolute maximum gate-source voltage is ±20 V, but the device is fully enhanced at V_GS ≥ 4.5 V. For reliable long-term operation, Infineon recommends limiting V_GS to 10–15 V in hard-switched applications to avoid overstressing the gate oxide while maintaining low R_DS(on). Driving above 15 V yields diminishing R_DS(on) improvement and increases risk of gate leakage acceleration.

Can IPB06N03LB be used as a synchronous rectifier in a 48 V to 12 V LLC converter?

Yes. With its 0.92–1.2 V body diode forward voltage at 50 A and only 10 nC Q_rr, IPB06N03LB reduces reverse recovery loss significantly versus Schottky diodes. Its 6.3 mΩ R_DS(on) ensures low conduction loss at typical LLC secondary-side currents, and its 6 kV/µs dv/dt rating prevents false turn-on during rapid V_DS transitions in resonant topologies.

How does the thermal resistance of IPB06N03LB compare between junction-to-case and junction-to-ambient?

R_thJC is specified at 1.8 K/W (measured directly from die to case), while R_thJA depends on PCB layout: 62 K/W for minimal footprint and 40 K/W with 6 cm² copper area. Unlike R_thJA, R_thJC is process-controlled and repeatable-making it the reliable basis for thermal design. Actual junction temperature must be calculated using R_thJC + PCB interface resistance + heatsink R_thCA.

Is IPB06N03LB suitable for automotive AEC-Q101 qualification?

No. While IPB06N03LB is JEDEC-qualified for industrial target applications and rated for 175 °C operation, it is not AEC-Q101 certified. Infineon offers the AUIRF3803S and AUIRL3803S as automotive-qualified equivalents with identical voltage/current ratings but additional stress testing and traceability requirements for automotive use.

IPB06N03LB G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.3mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 40µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2782 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 83W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB06N03LB G FAQ

1.How can I place an order for IPB06N03LB G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB06N03LB G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB06N03LB G reliable?

The price and inventory of IPB06N03LB G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB06N03LB G is usually 5 days.

3.What payment methods are accepted for IPB06N03LB G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB06N03LB G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB06N03LB G?

IPB06N03LB G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB06N03LB G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB06N03LB G?

For technical support, including IPB06N03LB G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB06N03LB G requirements.

6.How does Aetrix verify that IPB06N03LB G is sourced from the original manufacturer or authorized distributors?

All IPB06N03LB G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB06N03LB G meets industry standards.

7.What is the process for return or replacement of IPB06N03LB G?

All IPB06N03LB G units undergo pre-shipment inspection (PSI). If there is an issue with IPB06N03LB G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB06N03LB G part is unused and in its original packaging.

Return procedure for IPB06N03LB G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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