Infineon Technologies IPB070N06N G

Overview

IPB070N06N G from Infineon Technologies is a 60 V, 70 mΩ N-channel enhancement-mode power MOSFET in PG-TO-263-3 (D²PAK) package, rated for continuous drain current of 80 A at T_C = 25 °C and 50 A at T_C = 100 °C, with 100% avalanche-rated ruggedness and gate threshold voltage of 2.0–4.0 V - used in high-efficiency DC-DC converters and motor control half-bridges.

For engineers reviewing the IPB070N06N G datasheet, IPB070N06N G pinout, IPB070N06N G application, or IPB070N06N G equivalent, key selection criteria include R_DS(on) at 10 V_GS, safe operating area (SOA) limits, thermal resistance (R_thJC = 0.7 K/W), gate charge profile, and avalanche energy rating under unclamped inductive switching.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 6 technology, delivering low conduction loss and fast switching with optimized Q_g (39 nC typ.) and Q_gd/Q_g ratio for reduced Miller effect. It supports hard-switched topologies up to 100 kHz and features integrated body diode with t_rr = 45 ns and Q_rr = 120 nC at I_F = 40 A.

The device operates across T_j = –55 °C to +175 °C, with 100% UIS-tested avalanche capability (E_AS = 220 mJ at T_j = 25 °C), and meets RoHS, halogen-free, and lead-free (Pb-free) requirements per JEDEC J-STD-020.

Key Specifications

Pinout & Package

Package: PG-TO-263-3 (D²PAK), surface-mount, isolated drain tab, standard footprint compatible with TO-263-3 land pattern IPC-7351B (SOT404).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPP070N06N G, IPB070N06N G offers identical electrical performance with optimized surface-mount packaging for high-density layouts; versus IPI070N06N G, it delivers 42% lower thermal resistance and 33% higher current density in the same voltage class.

Availability

IPB070N06N G is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and automotive on-board chargers requiring stable component supply and long-term production continuity.

Supply support for IPB070N06N G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global manufacturing and R&D centers.

This part belongs to the OptiMOS™ 6 family, engineered for high-efficiency, high-power-density power conversion in data center, industrial automation, and electrified transportation systems.

FAQ

What is the maximum allowable gate-source voltage for IPB070N06N G?

The absolute maximum V_GS is ±20 V. Operation beyond ±16 V risks irreversible gate oxide damage. Recommended drive range is 0 V (off) to +10 V (fully enhanced), with 12 V acceptable for improved R_DS(on) margin at elevated temperature. Gate driver circuits must include clamping (e.g., Zener diode) to prevent overshoot during fast switching.

Does IPB070N06N G require a gate resistor, and what value is recommended?

Yes - a series gate resistor (R_G) is mandatory to dampen gate oscillation and control dV/dt. For 100 kHz operation with a 1-A peak driver, R_G = 5–10 Ω is typical. Lower values increase switching speed but raise EMI risk; higher values reduce losses but increase switching time and associated energy loss. Layout must minimize gate loop inductance (<2 nH).

Can IPB070N06N G be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) enables inherent current sharing. Parallel operation requires matched gate drive paths (identical trace length, impedance, and decoupling), symmetrical source inductance, and thermal coupling via shared heatsink. Derate total current by 15% for two devices and 25% for three or more to account for mismatch and thermal gradients.

Is the exposed drain tab electrically isolated from the PCB mounting surface?

No - the drain tab is internally connected to Pin 3 (Drain) and is not insulated. When mounted on a heatsink, electrical isolation (e.g., mica washer or silicone pad with ≥2 kV dielectric strength) is required unless the heatsink is at drain potential. Thermal interface material must be non-conductive and rated for >175 °C continuous operation.