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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB080N03LGATMA1

Name: IPB080N03LGATMA1
Brand: Infineon Technologies
SKU: IPB080N03LGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB080N03LGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB080N03LGATMA1.pdf

Description:: MOSFET N-CH 30V 50A D2PAK

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Inventory:9,650

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Product details

Overview

IPB080N03LGATMA1 from Infineon Technologies is an N-channel logic-level power MOSFET in PG-TO263-3 (D²PAK) package, rated for 30 V V_DS, 8.0 mΩ R_DS(on) at V_GS = 10 V, and 48 A continuous drain current at T_C = 25 °C. It features avalanche rating, low gate charge (Q_g = 8.7 nC), and optimized FOM for high-efficiency DC/DC converters and SMPS.

For engineers reviewing the IPB080N03LGATMA1 datasheet, IPB080N03LGATMA1 pinout, IPB080N03LGATMA1 application, or IPB080N03LGATMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V drive, single-pulse avalanche energy (E_AS = 50 mJ), thermal resistance (R_thJC = 3.2 K/W), and diode forward voltage (V_SD = 0.91–1.1 V).

Technical Context

This MOSFET employs Infineon's OptiMOS™ 3 technology, delivering enhanced switching speed via low C_iss (1400–1900 pF) and C_rss (29 pF), with fast turn-on delay (t_d(on) = 4.6 ns) and rise time (t_r = 3.6 ns). Its logic-level gate threshold (V_GS(th) = 1–2.2 V) enables direct drive from 3.3 V or 5 V controllers.

The device integrates a robust body diode with Q_rr = 10 nC and reverse recovery dv/dt capability of 6 kV/µs, supporting synchronous rectification and hard-switched topologies. Thermal design is supported by a low junction-to-case resistance (3.2 K/W) and JEDEC-qualified reliability for industrial power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V nominal bus applications
R_DS(on) max @ V_GS = 10 V	8.0 mΩ - Enables <1.2 W conduction loss at 40 A in TO-263 package
I_D cont. @ T_C = 25 °C	48 A - Sustains high-current output stage without forced cooling
Q_g	8.7 nC - Reduces gate driver power and switching losses in 500 kHz+ converters
E_AS	50 mJ - Withstands single-pulse inductive energy during fault conditions
V_GS(th)	1–2.2 V - Ensures reliable turn-on with standard logic-level microcontrollers
R_thJC	3.2 K/W - Allows precise junction temperature estimation under steady-state load

Pinout & Package

IPB080N03LGATMA1 uses the PG-TO263-3 (D²PAK) surface-mount package with exposed drain tab for thermal performance. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Logic-level control input; requires <2.2 V to turn on, compatible with 3.3 V GPIO
Pin 2 (D)	Drain	High-side or low-side switch node; electrically connected to exposed copper tab for heatsinking
Pin 3 (S)	Source	Reference node for gate drive and current sensing; tied to PCB ground plane in low-side configuration

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4.5 V, eliminating need for gate boosters in 5 V systems
Avalanche-rated	Rated for repetitive single-pulse energy up to 50 mJ, enabling ruggedness in inductive switching
Low Q_g × R_DS(on) FOM	69.6 mΩ·nC - Optimized for high-frequency, high-efficiency buck converters
Integrated body diode	V_SD = 0.91–1.1 V at 30 A ensures low-loss freewheeling in synchronous rectifiers

Applications

Server VRM Power Stage

Industrial DC/DC Converter

Use Scenario: High-current, multi-phase 12 V → 1 V conversion for CPU/GPU core supplies.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in interleaved buck stage.

Use Value: 8.0 mΩ R_DS(on) and 48 A rating minimize conduction loss at >300 A per phase; low Q_g supports 1 MHz+ switching.

Use Scenario: Isolated 48 V to 12 V step-down for PLC I/O modules and motor drives.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or LLC half-bridge.

Use Value: Avalanche rating and 6 kV/µs dv/dt immunity ensure reliability during transformer leakage spikes and load transients.

Automotive Body Control Module

Telecom PoE++ Switch

Use Scenario: Load switching for headlights, HVAC actuators, and solenoids in 12 V vehicle systems.

IC Role / Device Role / Timing Role: High-side load switch with integrated protection.

Use Value: Logic-level gate allows direct MCU drive; 30 V rating covers load dump transients up to ISO 7637-2 Pulse 5a.

Use Scenario: 90 W PoE++ (IEEE 802.3bt Type 4) power sourcing equipment (PSE) switch.

IC Role / Device Role / Timing Role: Hot-swap MOSFET in 57 V primary-side current limiting path.

Use Value: Low R_DS(on) minimizes I²R loss across 100 mΩ sense resistor; RoHS/halogen-free compliance meets telecom environmental specs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PBF	R_DS(on) = 12 mΩ @ 10 V; higher Q_g (21 nC); TO-220 package	Larger footprint and higher thermal resistance (R_thJC = 3.0 K/W but no exposed tab)	Prefer IPB080N03LGATMA1 for space-constrained, high-frequency designs requiring lower switching loss.
STL220N3LLH6	R_DS(on) = 7.5 mΩ @ 10 V; same D²PAK package; Q_g = 10.5 nC	Slightly better conduction loss but higher gate charge increases driver stress at >1 MHz	Choose IPB080N03LGATMA1 when optimizing for gate drive simplicity and E_AS margin over minimal R_DS(on) gain.

Compared with IRL3803PBF and STL220N3LLH6, IPB080N03LGATMA1 delivers superior FOM (69.6 vs. 252 and 78.8 mΩ·nC), tighter V_GS(th) distribution (1–2.2 V), and JEDEC-qualified reliability-making it optimal for high-reliability, high-frequency industrial and telecom power stages.

Availability

IPB080N03LGATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, and automotive body control modules requiring stable component supply and long-term manufacturability.

Supply support for IPB080N03LGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101.

This part belongs to Infineon's OptiMOS™ 3 logic-level MOSFET product line, engineered for high-efficiency, high-frequency switching in server, telecom, and industrial power supplies where low R_DS(on), low Q_g, and avalanche robustness are critical.

FAQ

Is IPB080N03LGATMA1 suitable for 48 V input DC/DC converters?

Yes. With a 30 V V_DS rating and avalanche energy of 50 mJ, it is appropriate for secondary-side synchronous rectification in isolated 48 V → 12 V or 5 V converters. For primary-side use, a higher-voltage MOSFET is required due to reflected transients exceeding 30 V.

What is the maximum recommended gate resistor for 1 MHz operation?

A gate resistor of ≤1.6 Ω is recommended to maintain t_d(on) ≤ 4.6 ns and t_r ≤ 3.6 ns at 1 MHz. Higher values increase switching time and losses; simulation with the provided Q_g = 8.7 nC and gate plateau voltage of 3.3 V confirms this range.

Does the body diode support continuous reverse conduction in synchronous rectification?

Yes. The device supports I_S = 43 A continuous forward current and I_S,pulse = 350 A, with V_SD = 0.91–1.1 V at 30 A and 25 °C. This enables efficient freewheeling in buck-derived topologies without external Schottky diodes.

How does its thermal performance compare between TO-220 and TO-263 packages?

IPB080N03LGATMA1 in PG-TO263-3 achieves R_thJC = 3.2 K/W, matching IPP080N03LG's TO-220 value. However, the D²PAK's larger copper area improves R_thJA on PCBs-40 K/W with 6 cm² cooling versus 62 K/W for minimal footprint-enhancing system-level thermal headroom.

IPB080N03LGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1900 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 47W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB080N03LGATMA1 FAQ

1.How can I place an order for IPB080N03LGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB080N03LGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB080N03LGATMA1 reliable?

The price and inventory of IPB080N03LGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB080N03LGATMA1 is usually 5 days.

3.What payment methods are accepted for IPB080N03LGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB080N03LGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB080N03LGATMA1?

IPB080N03LGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB080N03LGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB080N03LGATMA1?

For technical support, including IPB080N03LGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB080N03LGATMA1 requirements.

6.How does Aetrix verify that IPB080N03LGATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB080N03LGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB080N03LGATMA1 meets industry standards.

7.What is the process for return or replacement of IPB080N03LGATMA1?

All IPB080N03LGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB080N03LGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB080N03LGATMA1 part is unused and in its original packaging.

Return procedure for IPB080N03LGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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