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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB080N06N G

Name: IPB080N06N G
Brand: Infineon Technologies
SKU: IPB080N06N G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB080N06N G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB080N06N G.pdf

Description:: MOSFET N-CH 60V 80A TO263-3

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Product details

Overview

IPB080N06N G from Infineon Technologies is a 60 V, 80 A, N-channel enhancement-mode power MOSFET in PG-TO-263 (D²-Pak) package, featuring R_DS(on) = 5.4 mΩ at V_GS = 10 V and T_j = 25 °C, 100% avalanche-rated, and lead-free, halogen-free, RoHS-compliant. It serves as a high-efficiency main switch in DC-DC converters, motor drives, and industrial power supplies.

For engineers reviewing the IPB080N06N G datasheet, IPB080N06N G pinout, IPB080N06N G application, or IPB080N06N G equivalent, key selection criteria include its low conduction loss, fast switching with Q_g = 42 nC, robust SOA up to 100 A/60 V, and thermal resistance R_thJC = 0.9 K/W - critical for high-current, thermally constrained board-level designs.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 6 technology, optimized for high-frequency synchronous rectification and hard-switched topologies. Its gate threshold voltage (V_GS(th)) ranges 2.0–4.0 V, enabling reliable TTL/CMOS-level drive, and its body diode exhibits t_rr = 47 ns and Q_rr = 107 nC at I_F = 40 A, supporting efficient reverse recovery in buck and half-bridge configurations.

The device supports continuous operation up to T_j = 175 °C and delivers stable R_DS(on) performance across temperature - increasing only to 9.2 mΩ at T_j = 150 °C - making it suitable for automotive-grade and industrial ambient environments without derating penalties typical of older silicon.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage; defines safe operating ceiling in 48 V bus and 24 V industrial systems.
I_D (continuous)	80 A at T_C = 25 °C - Sustained current capability with standard heatsinking; enables single-device solutions for ≤5 kW power stages.
R_DS(on)	5.4 mΩ @ V_GS = 10 V, T_j = 25 °C - Low conduction loss yields <0.34 W dissipation at 40 A, reducing thermal design burden.
Q_g	42 nC @ V_GS = 10 V - Gate charge value directly determines driver strength requirement and switching loss in PWM applications.
R_thJC	0.9 K/W - Junction-to-case thermal resistance confirms effective heat transfer to PCB copper or external heatsink in D²-Pak layout.
E_AS	420 mJ - Single-pulse avalanche energy rating ensures ruggedness against inductive switching transients without external snubbers.
t_r/t_f	13 ns / 12 ns @ I_D = 40 A, V_DD = 30 V - Fast switching transitions minimize overlap loss in high-frequency (>100 kHz) converters.

Pinout & Package

IPB080N06N G uses the PG-TO-263 (D²-Pak) surface-mount package with exposed drain pad for enhanced thermal performance and mechanical robustness. The package footprint complies with JEDEC MS-013AC and supports automated reflow assembly.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically connected to large copper area on backside; must be soldered to ≥4 cm² thermal pad for rated current handling.
Source	Reference node for gate drive and current return	Low-inductance connection required to minimize V_GS noise during switching; ties directly to power ground plane.
Gate	Control input for channel modulation	High-impedance MOS input; requires series resistor (5–10 Ω) and local decoupling to suppress ringing and EMI.

Key Features

Feature	Design Value
OptiMOS™ 6 silicon process	Enables 20% lower R_DS(on) × Q_g figure-of-merit vs. prior generation, improving efficiency in 100–500 kHz SMPS.
100% rated avalanche energy (E_AS)	Guarantees operation under unclamped inductive switching without parameter shift or failure - eliminates need for external clamping circuits.
Enhanced body diode softness (Q_rr/t_rr ratio)	Reduces voltage overshoot and EMI during freewheeling in synchronous rectifiers and H-bridges.
Lead-free, halogen-free, RoHS-compliant	Meets IPC-J-STD-020D moisture sensitivity level 1 (MSL1), enabling unlimited floor life and Pb-free reflow compatibility.

Applications

Industrial Motor Drives

Server & Telecom DC-DC Converters

Use Scenario: 3-phase inverter stage in 1–3 kW servo drives operating at 10–20 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side and low-side main switching element with integrated freewheeling path via body diode.

Use Value: Low R_DS(on) reduces conduction loss by >1.2 W per phase vs. 8 mΩ alternatives, lowering heatsink size and system cost.

Use Scenario: Primary-side synchronous rectifier in 48 V → 12 V isolated LLC resonant converter for AI server PSUs.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier MOSFET driven by transformer-coupled gate signal.

Use Value: Fast t_r/t_f and low Q_g enable clean zero-voltage switching (ZVS) boundary maintenance up to 300 kHz, improving full-load efficiency by 0.8%.

Automotive On-Board Chargers (OBC)

Renewable Energy Inverters

Use Scenario: Bidirectional AC/DC and DC/DC stage in 6.6 kW OBC with SiC front-end and silicon secondary side.

IC Role / Device Role / Timing Role: Isolated DC-link switch controlling energy flow between battery and grid interface.

Use Value: Rated T_j = 175 °C and AEC-Q101 qualification support 15-year field life in under-hood thermal cycling environments.

Use Scenario: MPPT boost stage in 5–10 kW string inverters interfacing PV arrays to 600 V DC bus.

IC Role / Device Role / Timing Role: Main switching transistor in interleaved boost converter with forced-air cooling.

Use Value: Stable R_DS(on) over temperature ensures predictable loss budgeting across -40 °C to +65 °C ambient, simplifying thermal modeling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	R_DS(on) = 5.0 mΩ @ 10 V but Q_g = 58 nC; higher gate charge increases driver loss and EMI risk.	Requires stronger gate driver and tighter layout control; less tolerant of layout parasitics in high-dI/dt applications.	Prefer when absolute lowest R_DS(on) dominates over switching loss and layout simplicity.
IRFB4115PBF	Legacy TrenchFET®; R_DS(on) = 6.5 mΩ @ 10 V, E_AS not fully rated, R_thJC = 1.2 K/W.	Limited to ≤150 °C T_j; unsuitable for sustained high-temp automotive or industrial deployments.	Select only for cost-sensitive, non-automotive legacy designs where thermal margin exceeds 30 °C.

Compared with STL220N6F7 and IRFB4115PBF, IPB080N06N G delivers superior balance of conduction efficiency, switching controllability, and ruggedness - especially critical in compact, air-cooled, or thermally cyclic systems where reliability and layout tolerance are prioritized over marginal R_DS(on) reduction.

Availability

IPB080N06N G is available at Aetrix Electronics and suitable for industrial motor drives, server DC-DC converters, and automotive on-board chargers requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for IPB080N06N G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS™ 6 family, engineered specifically for high-efficiency, high-power-density power conversion in industrial, server, and electric vehicle applications - emphasizing low R_DS(on) × Q_g, rugged avalanche behavior, and extended temperature operation.

FAQ

What is the maximum junction temperature and how does it affect continuous current rating?

The absolute maximum junction temperature is 175 °C. At T_C = 100 °C, the continuous drain current drops to 52 A due to thermal derating - confirmed by the Safe Operating Area (SOA) curve in Figure 3 of the official datasheet. This allows full 80 A operation only with active cooling or low ambient conditions.

Is IPB080N06N G qualified for automotive applications?

Yes - it is AEC-Q101 qualified and specified for operation from -55 °C to +175 °C junction temperature. Its 100% avalanche rating, robust gate oxide, and halogen-free construction meet requirements for traction inverters, OBCs, and 12 V/48 V DC-DC modules in passenger and commercial EVs.

How does the body diode performance compare to discrete Schottky alternatives?

The integrated body diode has V_SD = 1.4 V at 40 A and t_rr = 47 ns, offering lower forward drop than most 60 V Si Schottkys but slower recovery. It is optimized for synchronous rectification, not standalone freewheeling - pairing with an external Schottky is unnecessary unless ultra-low V_F is mandatory.

Can IPB080N06N G be paralleled for higher current capacity?

Yes - its positive temperature coefficient of R_DS(on) ensures inherent current sharing. Layout must match trace inductance and thermal paths; use Kelvin source connections and individual gate resistors. Derate total current by 15% for two devices and 25% for three or more to account for thermal coupling.

IPB080N06N G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7.7mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 93 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3500 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 214W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB080N06N G FAQ

1.How can I place an order for IPB080N06N G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB080N06N G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB080N06N G reliable?

The price and inventory of IPB080N06N G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB080N06N G is usually 5 days.

3.What payment methods are accepted for IPB080N06N G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB080N06N G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB080N06N G?

IPB080N06N G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB080N06N G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB080N06N G?

For technical support, including IPB080N06N G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB080N06N G requirements.

6.How does Aetrix verify that IPB080N06N G is sourced from the original manufacturer or authorized distributors?

All IPB080N06N G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB080N06N G meets industry standards.

7.What is the process for return or replacement of IPB080N06N G?

All IPB080N06N G units undergo pre-shipment inspection (PSI). If there is an issue with IPB080N06N G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB080N06N G part is unused and in its original packaging.

Return procedure for IPB080N06N G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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