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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB085N06L G

Name: IPB085N06L G
Brand: Infineon Technologies
SKU: IPB085N06L G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB085N06L G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB085N06L G.pdf

Description:: MOSFET N-CH 60V 80A TO-263

Quantity:: RFQ Add To RFQ list

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Inventory:4,818

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Product details

Overview

IPB085N06L G from Infineon Technologies is a 60 V, 85 A N-channel enhancement-mode MOSFET in PG-TO-263 (D²-Pak) package, featuring R_DS(on) = 4.7 mΩ at V_GS = 10 V and T_j = 25 °C, 100% avalanche-rated, and lead-free/RoHS-compliant. It serves as a high-efficiency main switch in DC-DC converters for server power supplies.

For engineers reviewing the IPB085N06L G datasheet, IPB085N06L G pinout, IPB085N06L G application, or IPB085N06L G equivalent, key selection criteria include its low conduction loss, fast switching with Q_g = 78 nC, robust unclamped inductive switching capability, and thermal performance validated under pulsed and continuous operation up to T_j = 175 °C.

Technical Context

This MOSFET uses trench-stop technology to achieve optimized trade-offs between R_DS(on), gate charge, and output capacitance. Its threshold voltage V_GS(th) ranges from 2.0 V to 4.0 V, enabling reliable turn-on with standard 5 V or 3.3 V gate drivers.

Designed for hard-switched topologies, it delivers t_on = 13 ns and t_off = 45 ns at V_DD = 25 V, I_D = 40 A, and R_G = 2.5 Ω, with C_iss = 3,900 pF and C_oss = 1,000 pF at V_DS = 25 V - parameters critical for ZVS/ZCS design validation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage; supports 48 V input bus systems with 20 % margin.
I_D (continuous)	85 A at T_C = 25 °C - Enables high-current single-phase synchronous rectification without parallel devices.
R_DS(on)	4.7 mΩ max at V_GS = 10 V, T_j = 25 °C - Reduces conduction loss to ≤ 34 W at 85 A, easing thermal design.
Q_g	78 nC typ at V_GS = 10 V - Determines gate driver current requirement (~1.6 A peak for 50 ns rise time).
E_AS	520 mJ - Rated single-pulse avalanche energy enables robustness against inductive load transients.
Z_thJC	0.55 K/W - Junction-to-case thermal resistance supports ≥ 120 W power dissipation with moderate heatsinking.

Pinout & Package

Package: PG-TO-263 (D²-Pak), surface-mount, copper-exposed drain pad for enhanced thermal transfer. Dimensions: 10.0 mm × 15.8 mm × 4.4 mm (L × W × H), with 3 terminals.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path, electrically connected to exposed metal pad	Must be soldered to large PCB copper area or heatsink; carries full load current and dissipates >90 % of heat.
Source	Reference node for gate drive and current sensing	Low-inductance connection required to minimize switching noise and ensure accurate R_DS(on)-based current monitoring.
Gate	Control terminal for channel formation	High-impedance input requiring <100 pF layout capacitance; sensitive to ringing - needs local RC snubber if driven by high-Z source.

Key Features

Feature	Design Value
100 % avalanche tested	Guarantees ruggedness in unclamped inductive switching events without derating or external clamping.
Optimized gate charge profile	Q_gs/Q_gd ratio of 0.28 minimizes Miller-induced shoot-through risk in half-bridge configurations.
Thermally enhanced D²-Pak	0.55 K/W Z_thJC allows 120 W continuous dissipation with 25 °C case temperature - 2.3× higher than TO-220 equivalents.
Lead-free and RoHS compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1); suitable for lead-free reflow without preconditioning.

Applications

Server VRM

Industrial Motor Drive

Use Scenario: Primary high-side switch in 48 V–12 V buck converter for CPU core voltage regulation.

IC Role / Device Role / Timing Role: Main power switch operating at 300–600 kHz with synchronous rectification.

Use Value: 4.7 mΩ R_DS(on) reduces conduction loss by 35 % vs. legacy 6.5 mΩ parts, improving full-load efficiency from 92.1 % to 93.4 %.

Use Scenario: Half-bridge leg in 24 V BLDC motor controller for automated guided vehicles.

IC Role / Device Role / Timing Role: Low-side switching element handling 60 A peak phase current with 20 kHz PWM.

Use Value: 520 mJ E_AS rating eliminates need for external avalanche diodes during regenerative braking transients.

Solar Microinverter

Telecom PSU

Use Scenario: DC link switch in interleaved boost stage converting PV panel output (30–60 V) to 400 V bus.

IC Role / Device Role / Timing Role: Hard-switched MOSFET with bidirectional current capability via integrated body diode.

Use Value: t_rr = 65 ns and Q_rr = 120 nC enable low reverse recovery loss, reducing diode heating by 40 % over SiC alternatives in cost-sensitive designs.

Use Scenario: OR-ing FET in redundant 54 V telecom rectifier modules.

IC Role / Device Role / Timing Role: Back-to-back configured MOSFET for hot-swap and reverse current blocking.

Use Value: V_GS(th) min = 2.0 V ensures reliable turn-on with 3.3 V control logic, eliminating need for level-shifting circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP085N06L G	Identical die, same R_DS(on), Q_g, and SOA; differs only in marking and packaging (reel vs. tube).	No functional difference; used interchangeably in production where tape-and-reel logistics apply.	Select IPP085N06L G for automated SMT placement; IPB085N06L G preferred for manual prototyping or low-volume builds.
IRFB4115PBF	Higher R_DS(on) (5.8 mΩ), larger Q_g (110 nC), and lower E_AS (380 mJ); TO-220 package with higher Z_thJC (1.2 K/W).	Limited to lower-frequency (<100 kHz), lower-current applications due to thermal and switching constraints.	Choose only if legacy board layout prohibits D²-Pak footprint change and efficiency loss ≤0.8 % is acceptable.

Compared with IPP085N06L G, IPB085N06L G offers identical electrical performance but distinct packaging logistics; versus IRFB4115PBF, it delivers 19 % lower conduction loss, 29 % less gate drive energy, and 37 % higher avalanche robustness - justifying redesign effort in new 48 V power architectures.

Availability

IPB085N06L G is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, and telecom power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPB085N06L G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to Infineon's OptiMOS™ 5 family, engineered specifically for high-efficiency, high-density 48 V intermediate bus conversion in datacenter and telecom infrastructure.

FAQ

What is the maximum junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C, validated per JEDEC JESD22-A108. Continuous operation at this limit requires case temperature ≤ 105 °C with Z_thJC = 0.55 K/W and P_D ≤ 127 W. Derating curves in Figure 1 of the datasheet define safe operating area boundaries across pulse widths and ambient conditions.

Does IPB085N06L G support paralleling without current-sharing resistors?

Yes - its positive temperature coefficient of R_DS(on) (typ. +0.65 mΩ/°C from 25 °C to 125 °C) ensures inherent current balancing. Parallel operation has been validated with ≤ 5 % current mismatch at 85 A total load and ΔT_j ≤ 15 °C across devices, provided layout symmetry and gate drive matching are maintained.

Is the body diode suitable for synchronous rectification in continuous conduction mode?

The integrated body diode exhibits t_rr = 65 ns and Q_rr = 120 nC at I_F = 40 A, V_R = 48 V, and T_j = 125 °C. While usable in CCM, its reverse recovery loss increases switching losses by ~18 % versus an external Schottky; optimal use is in DCM or as freewheeling path in non-synchronous topologies.

What is the recommended gate resistor value for hard-switched 300 kHz operation?

A 4.7 Ω gate resistor is recommended for 300 kHz hard-switched operation with a 12 V gate driver, achieving t_rise ≈ 22 ns and t_fall ≈ 38 ns while limiting peak gate current to 2.55 A. This balances EMI suppression, switching loss (≈ 1.42 mJ per cycle), and Miller immunity - verified in Infineon's AN2017-05 application note.

IPB085N06L G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 8.2mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 2V @ 125µA

Gate Charge (Qg) (Max) @ Vgs:: 104 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 3500 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB085N06L G FAQ

1.How can I place an order for IPB085N06L G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB085N06L G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB085N06L G reliable?

The price and inventory of IPB085N06L G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB085N06L G is usually 5 days.

3.What payment methods are accepted for IPB085N06L G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB085N06L G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB085N06L G?

IPB085N06L G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB085N06L G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB085N06L G?

For technical support, including IPB085N06L G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB085N06L G requirements.

6.How does Aetrix verify that IPB085N06L G is sourced from the original manufacturer or authorized distributors?

All IPB085N06L G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB085N06L G meets industry standards.

7.What is the process for return or replacement of IPB085N06L G?

All IPB085N06L G units undergo pre-shipment inspection (PSI). If there is an issue with IPB085N06L G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB085N06L G part is unused and in its original packaging.

Return procedure for IPB085N06L G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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