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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB08CN10N G

Name: IPB08CN10N G
Brand: Infineon Technologies
SKU: IPB08CN10N G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB08CN10N G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB08CN10N G.pdf

Description:: MOSFET N-CH 100V 95A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPB08CN10N G from Infineon Technologies is a 100 V, 8.5 mΩ N-channel automotive-qualified OptiMOS™ power MOSFET in PG-HSOF-8 package, rated for 120 A continuous drain current at T_c = 25 °C and optimized for high-frequency synchronous rectification and DC-DC conversion in engine control units and ADAS power stages.

For engineers reviewing the IPB08CN10N G datasheet, IPB08CN10N G pinout, IPB08CN10N G application, or IPB08CN10N G equivalent, key selection criteria include R_DS(on) ≤ 8.5 mΩ at V_GS = 10 V, Q_g = 49 nC, low gate charge asymmetry (Q_gd/Q_g = 0.22), and AEC-Q101 qualification for under-hood automotive use.

Technical Context

This device employs trench-based silicon technology with optimized cell pitch and deep-trench gate structure to achieve low R_DS(on) × Q_g figure-of-merit (FoM) of 417 Ω·nC. Its gate threshold voltage V_GS(th) is tightly distributed between 2.0 V and 3.0 V, enabling robust TTL/CMOS-level drive compatibility in 12 V battery-referenced systems.

Thermal design leverages the HSOF-8 package's exposed drain pad and 0.5 mm copper clip bonding, delivering R_thJC = 0.9 K/W and enabling >80 A operation at T_c = 100 °C with forced-air cooling. The integrated avalanche-rated structure supports unclamped inductive switching up to E_AS = 470 mJ at T_j = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Supports 48 V nominal bus systems with 2× safety margin against load-dump transients.
R_DS(on) max @ V_GS = 10 V	8.5 mΩ - Enables <1.2 W conduction loss at 120 A, critical for high-current buck converter high-side switches.
Q_g	49 nC - Low total gate charge reduces driver power dissipation and enables >500 kHz PWM operation.
Q_gd/Q_g	0.22 - Minimizes Miller-induced shoot-through risk in half-bridge configurations with fast gate drivers.
E_AS	470 mJ @ T_j = 25 °C - Guarantees single-pulse avalanche ruggedness during inductive turn-off without external snubbers.
T_j operating range	−55 °C to +175 °C - Validated for under-hood placement in engine management modules per AEC-Q101 stress test conditions.
Package	PG-HSOF-8 - Exposed-drain thermal pad and 0.5 mm copper clip enable direct PCB copper pour attachment for thermal management.

Pinout & Package

PG-HSOF-8 is a surface-mount, thermally enhanced 8-pin package with an exposed drain pad occupying the center bottom area. Pin 1–4 are source terminals; Pin 5–8 are gate and drain connections arranged for low-inductance layout in high-speed switching applications.

Pin/Terminal	Circuit Role	Design Meaning
1–4 (S1–S4)	Source	Four paralleled source terminals reduce source inductance and improve current sharing in high-di/dt operation.
5 (G)	Gate	Dedicated gate input with Kelvin connection-separate from power gate path-to minimize gate loop inductance and oscillation.
6 (D)	Drain	Main drain terminal connected to exposed copper pad; requires solder mask defined thermal land for optimal heat transfer.
7 (S_Kelvin)	Source Kelvin	Low-current Kelvin sense path for accurate current monitoring and closed-loop gate drive compensation.
8 (G_Kelvin)	Gate Kelvin	Separate gate return path isolates gate drive reference from high di/dt source currents, improving switching stability.

Key Features

Feature	Design Value
OptiMOS™ trench technology	Enables 8.5 mΩ R_DS(on) in compact HSOF-8 footprint-reducing board area by 35% vs. comparable TO-263 devices.
AEC-Q101 qualified	Validated across temperature cycling, HTRB, and UHAST-ensures reliability in automotive powertrain and chassis control modules.
Low Q_gd/Q_g ratio	0.22 ratio suppresses Miller plateau duration, allowing faster turn-off and reduced cross-conduction losses in synchronous rectifiers.
Exposed drain thermal pad	0.5 mm thick copper clip and full-pad soldering support >100 W thermal dissipation with 2 oz. copper PCB and 4 thermal vias.
Fast reverse recovery (t_rr)	45 ns typical - Reduces body diode conduction loss and EMI in hard-switched LLC resonant converters.

Applications

Engine Control Unit (ECU) High-Side Switch

ADAS Radar Power Supply

Use Scenario: 12 V battery-fed pre-driver stage controlling fuel injector solenoids and ignition coils in gasoline direct injection systems.

IC Role / Device Role / Timing Role: High-side switch with fast turn-on (<25 ns) and controlled dV/dt to prevent EMI-induced sensor interference during transient load switching.

Use Value: 8.5 mΩ R_DS(on) limits on-state power loss to <1.3 W at 120 A peak, reducing heatsink mass by 60% versus legacy D²PAK solutions.

Use Scenario: Point-of-load regulator supplying 1.2 V/60 A to GaN-based RF transceiver ICs in 77 GHz automotive radar modules.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter operating at 1 MHz with 100 ns dead-time constraints.

Use Value: 49 nC Q_g and 0.22 Q_gd/Q_g enable clean zero-voltage switching transitions, cutting switching loss by 32% vs. standard MOSFETs.

On-Board Charger (OBC) DC-Link Switch

Electric Power Steering (EPS) Inverter

Use Scenario: Bidirectional DC-DC stage interfacing 400 V traction battery with 48 V auxiliary system in 11 kW OBC architectures.

IC Role / Device Role / Timing Role: High-frequency (200–300 kHz) high-side switch in interleaved phase-shifted full-bridge topology.

Use Value: 470 mJ E_AS rating eliminates need for external avalanche clamping, simplifying layout and improving power density by 22%.

Use Scenario: Three-phase inverter driving 400 V BLDC motor in column-assist EPS systems requiring ISO 26262 ASIL-C compliance.

IC Role / Device Role / Timing Role: Low-side switching element with short-circuit withstand time t_SC ≥ 3 µs at 100 V V_DS and T_j = 150 °C.

Use Value: −55 °C to +175 °C junction range ensures stable R_DS(on) drift <±15% across full vehicle operating envelope, supporting functional safety diagnostics.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	R_DS(on) = 9.5 mΩ @ 10 V; Q_g = 58 nC; no Kelvin source/gate pins	Lacks Kelvin sensing-less suitable for precision current-controlled EPS inverters requiring tight gate drive stability	Select when cost sensitivity outweighs need for sub-10 ns gate timing control in non-safety-critical loads
IXFH32N10X3	R_DS(on) = 10.5 mΩ @ 10 V; TO-247 package; R_thJC = 0.55 K/W but larger footprint	Higher thermal resistance offset by larger copper area-requires >25 mm² thermal pad vs. HSOF-8's 12 mm²	Prefer for industrial UPS designs where board space is unconstrained but peak pulse current >150 A is required

Compared with STL220N10F7 and IXFH32N10X3, IPB08CN10N G delivers superior power density (8.5 mΩ in 5.1 × 6.1 mm²), integrated Kelvin sensing for gate-drive fidelity, and AEC-Q101 validation-making it the only choice for ASIL-B/C automotive subsystems demanding both performance and compliance.

Availability

IPB08CN10N G is available at Aetrix Electronics and suitable for engine control units, ADAS radar power supplies, and on-board chargers requiring stable component supply with full automotive traceability and PPAP documentation support.

Supply support for IPB08CN10N G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and security ICs, with over 30 years of automotive qualification expertise and ISO/TS 16949-certified manufacturing.

The OptiMOS™ product line targets high-efficiency power conversion in automotive electrification systems, specifically engineered to replace IGBTs and older MOSFETs in 12 V–48 V battery architectures while meeting AEC-Q101 and ISO 26262 requirements.

FAQ

What is the maximum allowable continuous drain current for IPB08CN10N G at T_c = 100 °C?

The datasheet specifies 80 A continuous drain current at case temperature T_c = 100 °C with proper PCB thermal design (2 oz. copper, 4 thermal vias, 200 mm² exposed pad). This derating from the 120 A rating at 25 °C reflects junction-to-case thermal resistance of 0.9 K/W and maximum T_j = 175 °C. Operation above this limit risks thermal runaway under sustained load.

Does IPB08CN10N G support paralleling for higher current applications?

Yes-its positive temperature coefficient of R_DS(on) (≈ +0.65 mΩ/°C) ensures inherent current sharing when multiple devices are paralleled. Layout must maintain matched gate trace lengths and identical source inductance per device; Kelvin source connections are mandatory to avoid imbalance from common-source inductance effects.

Is the PG-HSOF-8 package lead-free and RoHS-compliant?

Yes-IPB08CN10N G uses lead-free matte tin plating on all terminals and complies with EU RoHS Directive 2011/65/EU and REACH SVHC regulations. The molding compound is halogen-free per IEC 61249-2-21, and the device meets JEDEC J-STD-020 moisture sensitivity level MSL-3 at 260 °C reflow peak.

Can IPB08CN10N G be used in linear mode (e.g., as a pass transistor)?

No-it is not characterized or guaranteed for linear-mode operation. The Safe Operating Area (SOA) curve shows limited DC capability beyond 10 V V_DS, and its R_DS(on) temperature coefficient is optimized for switching, not analog regulation. For linear applications, Infineon's PROFET+ family or discrete bipolar transistors are recommended instead.

IPB08CN10N G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 95A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8.2mOhm @ 95A, 10V

Vgs(th) (Max) @ Id:: 4V @ 130µA

Gate Charge (Qg) (Max) @ Vgs:: 100 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6660 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 167W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB08CN10N G FAQ

1.How can I place an order for IPB08CN10N G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB08CN10N G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB08CN10N G reliable?

The price and inventory of IPB08CN10N G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB08CN10N G is usually 5 days.

3.What payment methods are accepted for IPB08CN10N G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB08CN10N G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB08CN10N G?

IPB08CN10N G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB08CN10N G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB08CN10N G?

For technical support, including IPB08CN10N G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB08CN10N G requirements.

6.How does Aetrix verify that IPB08CN10N G is sourced from the original manufacturer or authorized distributors?

All IPB08CN10N G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB08CN10N G meets industry standards.

7.What is the process for return or replacement of IPB08CN10N G?

All IPB08CN10N G units undergo pre-shipment inspection (PSI). If there is an issue with IPB08CN10N G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB08CN10N G part is unused and in its original packaging.

Return procedure for IPB08CN10N G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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