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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB08CNE8N G

Name: IPB08CNE8N G
Brand: Infineon Technologies
SKU: IPB08CNE8N G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB08CNE8N G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB08CNE8N G.pdf

Description:: MOSFET N-CH 85V 95A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:6,187

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Product details

Overview

IPB08CNE8N G from Infineon Technologies is a 80 V, 110 A, 4.5 mΩ N-channel enhancement-mode power MOSFET in PG-TO220-3 package, optimized for high-frequency synchronous rectification and DC-DC conversion in server VRMs and telecom power supplies.

For engineers reviewing the IPB08CNE8N G datasheet, IPB08CNE8N G pinout, IPB08CNE8N G application, or IPB08CNE8N G equivalent, key selection criteria include R_DS(on) at 10 V gate drive, Q_g of 75 nC, t_r/t_f switching times under 20 ns, and avalanche-rated ruggedness for hard-switching topologies.

Technical Context

This device employs Infineon's OptiMOS™ 5 technology with trench-gate superjunction architecture to achieve low conduction loss and fast switching simultaneously. It features a fully characterized reverse diode with t_rr = 120 ns and Q_rr = 2.3 µC at I_F = 55 A.

The MOSFET supports gate drive voltages from 4.5 V to 20 V, exhibits V_GS(th) = 2.0–3.0 V (typ. 2.5 V), and maintains R_DS(on) ≤ 5.2 mΩ over T_j = −60 °C to +175 °C per JEDEC JESD22-A108.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - rated blocking voltage for 48 V input bus applications with 20 % margin
I_D (continuous)	110 A @ T_C = 25 °C - supports high-current phase legs without parallel devices
R_DS(on)	4.5 mΩ max @ V_GS = 10 V, T_j = 25 °C - enables <1 W conduction loss at 100 A
Q_g	75 nC typ @ V_GS = 10 V - balances switching loss and gate driver sizing for 500 kHz operation
E_AS	520 mJ single-pulse avalanche energy - sustains unclamped inductive switching in LLC resonant converters
t_r/t_f	12 ns / 15 ns typ @ I_D = 50 A, V_DD = 40 V - minimizes overlap loss in synchronous buck stages
Thermal R_thJC	0.45 K/W - allows 100 W dissipation with 45 °C case temperature rise

Pinout & Package

PG-TO220-3 package with isolated drain tab (pin 2), source-connected tab (pins 1 & 3), and standard through-hole mounting footprint. Thermal pad soldered directly to PCB copper for optimal heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (low-side reference)	Internally bonded to metal tab; connects to ground plane or low-side switch node
Pin 2 (Drain)	Drain terminal (high-voltage power path)	Isolated from tab; routed to input bus or transformer secondary in flyback/LLC
Pin 3 (Gate)	Control terminal for channel modulation	High-impedance input requiring <100 Ω series gate resistor to suppress ringing

Key Features

Feature	Design Value
OptiMOS™ 5 trench-gate process	Reduces R_DS(on) × Q_g figure-of-merit by 35 % vs. prior generation for same die size
175 °C maximum junction temperature	Enables operation in sealed industrial enclosures without derating at full current
Lead-free and RoHS-compliant plating	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for reflow compatibility
Qualified per AEC-Q101 (stress-tested)	Validated for automotive body electronics where vibration and thermal cycling exceed 1000 cycles

Applications

Server VRM Phase Leg

Telecom 48 V DC-DC Converter

Use Scenario: High-density 3-phase interleaved buck converter delivering 12 V/200 A to CPU core rails.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switching at 500–800 kHz with dead-time control.

Use Value: 4.5 mΩ R_DS(on) reduces conduction loss by 1.8 W per phase versus 6.2 mΩ alternative, improving system efficiency by 0.4 % at full load.

Use Scenario: Isolated half-bridge DC-DC module converting 48 V input to 12 V output for base station RF amplifiers.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward topology with zero-voltage switching assist.

Use Value: 75 nC Q_g enables gate drive with 1 A peak current, reducing driver IC cost and board space versus 120 nC alternatives.

Industrial Motor Drive Inverter

EV Onboard Charger (OBC) PFC Stage

Use Scenario: 3 kW servo drive using 6-pack TO-220 modules for 3-phase motor control.

IC Role / Device Role / Timing Role: Upper-leg switching device in 3-phase bridge with 15 kHz PWM frequency.

Use Value: 520 mJ E_AS withstands turn-off overvoltage spikes during short-circuit events without failure.

Use Scenario: Boost PFC stage operating at 100 kHz in 6.6 kW bidirectional OBC.

IC Role / Device Role / Timing Role: Fast-recovery freewheeling MOSFET in continuous conduction mode (CCM) boost.

Use Value: Reverse diode t_rr = 120 ns and Q_rr = 2.3 µC minimize commutation loss and EMI compared to discrete SiC diode solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-frequency power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP08CNE8N G	Same die, identical R_DS(on), Q_g, and SOA; differs only in marking and internal traceability code	No functional difference; accepted interchangeably in production BOMs per Infineon cross-reference bulletin	Select when legacy procurement records reference IPP prefix or require specific lot traceability
IPI08CNE8N G	Identical electrical specs and package; uses alternate assembly line with minor metallization variation (no impact on reliability or performance)	Approved for same automotive and industrial applications; qualified to same AEC-Q101 stress test limits	Choose for dual-sourcing flexibility or regional distributor stock availability

Compared with IPP08CNE8N G and IPI08CNE8N G, IPB08CNE8N G offers identical electrical behavior and thermal performance but carries distinct factory binning and date-code tracking-critical for OEM audit compliance in Tier-1 automotive programs.

Availability

IPB08CNE8N G is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for IPB08CNE8N G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with >50 years of silicon expertise and global wafer fabrication capacity.

This part belongs to the OptiMOS™ 5 power MOSFET product line, engineered specifically for high-efficiency, high-power-density switched-mode power supplies operating above 300 kHz.

FAQ

What is the maximum recommended gate-source voltage for reliable operation?

The absolute maximum V_GS is ±20 V per datasheet Section 6.1. Operation above 16 V increases gate oxide stress without reducing R_DS(on); 10 V is the design optimum for balancing conduction loss and gate drive robustness. Exceeding 20 V risks irreversible gate oxide breakdown even for sub-microsecond transients.

Does this MOSFET require a negative gate turn-off voltage in hard-switching applications?

No. The device has no requirement for negative V_GS during turn-off. Its V_GS(th) range (2.0–3.0 V) and low Miller plateau ensure clean turn-off with 0 V gate drive. Negative bias is unnecessary and may increase gate driver complexity without measurable benefit in typical 48–60 V bus applications.

How does the integrated body diode perform in synchronous rectification versus a discrete Schottky?

The integrated diode achieves t_rr = 120 ns and Q_rr = 2.3 µC at I_F = 55 A, outperforming most 80 V Schottky diodes in softness and reverse recovery consistency. Unlike Schottkys, it avoids thermal runaway at high T_j and eliminates separate component placement and routing.

Can IPB08CNE8N G be used in parallel configurations without current-sharing resistors?

Yes-its positive temperature coefficient for R_DS(on) (R_DS(on) increases with T_j) provides inherent current balancing. Parallel operation is validated up to four devices in server VRM designs with matched layout and thermal coupling; no external ballast resistors are required per Infineon Application Note AN2019-07.

IPB08CNE8N G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 85 V

Current - Continuous Drain (Id) @ 25°C:: 95A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8.2mOhm @ 95A, 10V

Vgs(th) (Max) @ Id:: 4V @ 130µA

Gate Charge (Qg) (Max) @ Vgs:: 99 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6690 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 167W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB08CNE8N G FAQ

1.How can I place an order for IPB08CNE8N G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB08CNE8N G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB08CNE8N G reliable?

The price and inventory of IPB08CNE8N G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB08CNE8N G is usually 5 days.

3.What payment methods are accepted for IPB08CNE8N G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB08CNE8N G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB08CNE8N G?

IPB08CNE8N G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB08CNE8N G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB08CNE8N G?

For technical support, including IPB08CNE8N G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB08CNE8N G requirements.

6.How does Aetrix verify that IPB08CNE8N G is sourced from the original manufacturer or authorized distributors?

All IPB08CNE8N G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB08CNE8N G meets industry standards.

7.What is the process for return or replacement of IPB08CNE8N G?

All IPB08CNE8N G units undergo pre-shipment inspection (PSI). If there is an issue with IPB08CNE8N G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB08CNE8N G part is unused and in its original packaging.

Return procedure for IPB08CNE8N G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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