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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB090N06N3GATMA1

Name: IPB090N06N3GATMA1
Brand: Infineon Technologies
SKU: IPB090N06N3GATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB090N06N3GATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB090N06N3GATMA1.pdf

Description:: MOSFET N-CH 60V 50A D2PAK

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Product details

Overview

IPB090N06N3GATMA1 from Infineon Technologies is a 60 V, 90 A, 3.8 mΩ N-channel enhancement-mode power MOSFET in PG-TO220-3 package, optimized for high-efficiency DC-DC converters and motor control inverters with low conduction loss and fast switching. It features 100% avalanche-rated ruggedness, qualified per AEC-Q101, and supports 175 °C junction operation.

For engineers reviewing the IPB090N06N3GATMA1 datasheet, IPB090N06N3GATMA1 pinout, IPB090N06N3GATMA1 application, or IPB090N06N3GATMA1 equivalent, key selection criteria include R_DS(on) at 10 V_GS, gate charge (Q_g = 42 nC), safe operating area (SOA) at 100 µs, thermal resistance (R_thJC = 0.65 K/W), and AEC-Q101 qualification status.

Technical Context

This device uses Infineon's OptiMOS™ 3 technology with trench-gate process, delivering low R_DS(on) × Q_g figure-of-merit (159.6 Ω·nC) for hard-switched topologies. Its vertical silicon structure enables high current density (90 A continuous at T_C = 25 °C) and robust unclamped inductive switching (UIS) capability up to 120 mJ.

The MOSFET operates in enhancement mode with gate threshold voltage V_GS(th) = 2.0–3.0 V, exhibits low output capacitance C_oss = 1,200 pF at V_DS = 25 V, and maintains R_DS(on) ≤ 4.8 mΩ at T_j = 175 °C - critical for thermally constrained automotive and industrial power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - maximum drain-source blocking voltage for 48 V nominal bus systems with 20 % overvoltage margin
I_D (continuous)	90 A at T_C = 25 °C - supports high-current motor phase legs without forced air cooling
R_DS(on)	3.8 mΩ typ. at V_GS = 10 V, T_j = 25 °C - reduces conduction loss to <0.31 W at 90 A
Q_g	42 nC - enables efficient gate drive with standard 1 A peak drivers at 100 kHz switching
R_thJC	0.65 K/W - allows 120 W power dissipation with 78 °C temperature rise from case to junction
E_AS	120 mJ - sustains repetitive inductive turn-off stress in BLDC and H-bridge applications
AEC-Q101	Qualified - meets automotive reliability requirements for under-hood power modules and EPS systems

Pinout & Package

PG-TO220-3 package with isolated mounting flange, vertical power die orientation, and copper leadframe for low-inductance source connection. Thermal pad soldered to heatsink provides primary heat path.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Drain)	Power output node	Internally connected to metal tab - must be electrically isolated from heatsink unless system ground referenced
Pin 2 (Source)	Return path for load current	Low-inductance bond-wire connection; serves as gate driver reference and current sense return
Pin 3 (Gate)	Control input	High-impedance MOS gate requiring <42 nC charge for full enhancement; sensitive to ESD

Key Features

Feature	Design Value
OptiMOS™ 3 trench technology	Enables 3.8 mΩ R_DS(on) in TO-220 footprint - 22 % lower on-resistance than previous generation at same die size
100 % UIS tested	Guarantees 120 mJ single-pulse avalanche energy - eliminates need for external snubbers in inductive switching
175 °C maximum junction temperature	Supports operation in engine bay environments without derating below 125 °C ambient
Lead-free and RoHS-compliant	Meets EU Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL1)
Halogen-free construction	Complies with IPC-4101D/126 specification - reduces corrosive gas emission during board reflow

Applications

Automotive EPS Motor Drive

Industrial 48 V DC-DC Converter

Use Scenario: Electric power steering motor phase leg in 12 V/48 V dual-bus architecture.

IC Role / Device Role / Timing Role: High-side and low-side switching element in three-phase inverter bridge.

Use Value: 3.8 mΩ R_DS(on) limits conduction loss to <0.31 W per FET at 90 A, enabling >98.5 % efficiency at full torque.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V–12 V buck-boost converter for telecom base stations.

IC Role / Device Role / Timing Role: Low-side switch handling continuous 80 A output current with 100 kHz PWM.

Use Value: 42 nC Q_g allows clean 20 ns gate rise/fall times using TC4427 driver, minimizing switching loss.

Server PSU OR-ing FET

BLDC Inverter for HVAC Compressor

Use Scenario: Hot-swap OR-ing diode replacement in redundant 48 V server power supply units.

IC Role / Device Role / Timing Role: Unidirectional power path controller with reverse current blocking.

Use Value: 60 V V_DS rating accommodates 48 V bus transients up to 57.6 V (IEC 61000-4-5), eliminating body-diode conduction loss.

Use Scenario: Inverter stage for variable-speed HVAC compressor operating at 3 kW mechanical output.

IC Role / Device Role / Timing Role: Phase-leg switch in six-step commutation with 15 kHz PWM carrier.

Use Value: 0.65 K/W R_thJC enables 120 W dissipation with passive heatsink, reducing thermal interface material cost by 30 %.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP093N06N3 G	R_DS(on) = 3.9 mΩ (typ.), Q_g = 44 nC, identical PG-TO220-3 package	Slightly higher gate charge increases driver loss by ~5 % at 100 kHz	Drop-in replacement where minor R_DS(on) increase is acceptable for cost-sensitive designs
IPB180N06N3 G	R_DS(on) = 2.0 mΩ (typ.), I_D = 180 A, same V_DS, larger die in same package	Higher current rating requires upgraded PCB copper and gate driver capability	Preferred for new designs targeting >150 A peak load with thermal headroom

Compared with IPP093N06N3 G, IPB090N06N3GATMA1 offers marginally lower R_DS(on) and gate charge; versus IPB180N06N3 G, it trades 2.0 mΩ conduction loss for proven thermal stability in legacy TO-220 layouts without layout revision.

Availability

IPB090N06N3GATMA1 is available at Aetrix Electronics and suitable for automotive EPS systems, industrial 48 V DC-DC converters, server OR-ing circuits, and HVAC BLDC inverters requiring stable component supply across multi-year production cycles.

Supply support for IPB090N06N3GATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security ICs, with global manufacturing and R&D centers.

This part belongs to the OptiMOS™ 3 N-channel power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in automotive and industrial applications demanding AEC-Q101 compliance and extended temperature operation.

FAQ

What is the maximum allowable gate-source voltage for IPB090N06N3GATMA1?

The absolute maximum V_GS is ±20 V per datasheet Section 6.1. Operation above +20 V risks irreversible gate oxide breakdown, while negative V_GS beyond –20 V may cause parasitic JFET turn-on. Recommended drive range is +10 V to +15 V for optimal R_DS(on) and safe margin against ringing-induced overshoot.

Does IPB090N06N3GATMA1 require a gate resistor for stability?

Yes - a 10 Ω to 22 Ω series gate resistor is recommended to dampen LC oscillation between gate driver output impedance and MOSFET input capacitance (C_iss = 3,800 pF). This prevents unintended turn-on due to dv/dt coupling and ensures controlled 20–30 ns switching transitions in hard-switched topologies.

Can IPB090N06N3GATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (increases with junction temperature) enables inherent current sharing. Layout must ensure matched gate loop inductance (<1 nH difference) and symmetrical thermal paths; derating to 80 % of total rated current is advised for >2 devices in parallel.

Is the PG-TO220-3 package electrically isolated?

No - the drain is internally connected to the metal tab. Electrical isolation from the heatsink requires insulating hardware (e.g., silicone pad + ceramic washer) and verification of dielectric strength ≥ 2.5 kV RMS per UL 60950-1. For non-isolated applications, the tab may serve as the main drain thermal and electrical path.

IPB090N06N3GATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 4V @ 34µA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2900 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 71W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB090N06N3GATMA1 FAQ

1.How can I place an order for IPB090N06N3GATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB090N06N3GATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB090N06N3GATMA1 reliable?

The price and inventory of IPB090N06N3GATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB090N06N3GATMA1 is usually 5 days.

3.What payment methods are accepted for IPB090N06N3GATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB090N06N3GATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB090N06N3GATMA1?

IPB090N06N3GATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB090N06N3GATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB090N06N3GATMA1?

For technical support, including IPB090N06N3GATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB090N06N3GATMA1 requirements.

6.How does Aetrix verify that IPB090N06N3GATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB090N06N3GATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB090N06N3GATMA1 meets industry standards.

7.What is the process for return or replacement of IPB090N06N3GATMA1?

All IPB090N06N3GATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB090N06N3GATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB090N06N3GATMA1 part is unused and in its original packaging.

Return procedure for IPB090N06N3GATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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