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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB091N06N G

Name: IPB091N06N G
Brand: Infineon Technologies
SKU: IPB091N06N G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB091N06N G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB091N06N G.pdf

Description:: MOSFET N-CHAN D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPB091N06N G from Infineon Technologies is a 60 V, 91 A, N-channel TrenchMOS power MOSFET in D2PAK (TO-263) package, optimized for high-efficiency DC-DC converters and motor control stages with R_DS(on) = 9.1 mΩ at V_GS = 10 V and Q_g = 54 nC. It operates with 175 °C maximum junction temperature and supports continuous drain current up to 91 A at T_C = 25 °C.

For engineers reviewing the IPB091N06N G datasheet, IPB091N06N G pinout, IPB091N06N G application, or IPB091N06N G equivalent, key selection criteria include low conduction loss at high current, fast switching capability for synchronous rectification, thermal performance in surface-mount power stages, and gate drive compatibility with standard 10 V logic-level controllers.

Technical Context

This MOSFET employs Infineon's TrenchStop™ 6 technology, delivering reduced gate charge and output capacitance versus prior generations. Its optimized cell layout enables lower R_DS(on) × Q_g figure-of-merit (FoM), critical for high-frequency switching in buck converters and half-bridge inverters.

The device features avalanche-rated ruggedness (E_AS = 480 mJ at T_J = 25 °C), integrated body diode with soft recovery characteristics, and guaranteed 100% UIS testing - supporting reliable operation under transient overloads and inductive load switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage compatible with 48 V input systems and 24 V industrial rails.
R_DS(on) @ V_GS = 10 V	9.1 mΩ - Enables <1 W conduction loss at 10 A continuous drain current in thermally adequate PCB layouts.
I_D (continuous, T_C = 25 °C)	91 A - Supports high-current power stages without paralleling, reducing component count in motor drives.
Q_g	54 nC - Low gate charge allows efficient driving with standard gate drivers (e.g., 1EDN7512B) at 500 kHz switching.
E_AS	480 mJ - Confirmed single-pulse avalanche energy rating ensures robustness during inductive turn-off transients.
T_J max	175 °C - Enables operation in sealed enclosures or high-ambient environments without derating below 125 °C ambient.

Pinout & Package

Package: D2PAK (TO-263-3), surface-mount, copper-exposed drain pad for enhanced thermal dissipation. Standard 3-pin configuration with drain connected to tab.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Reference node for gate drive; connects to power ground or low-side switch node in half-bridge topologies.
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <5 V threshold; driven by isolated or level-shifted gate driver ICs.
Pin 3 (Drain)	Power output / high-side connection	Internally bonded to exposed metal tab; must be soldered to large copper pour for thermal management and EMI control.

Key Features

Feature	Design Value
Optimized R_DS(on) × Q_g FoM	489 mΩ·nC - Reduces total switching + conduction losses in 200–500 kHz DC-DC applications.
100% UIS tested	Guaranteed avalanche withstand per JEDEC JESD22-A109 - eliminates need for external snubbers in relay or solenoid drive.
Soft-recovery body diode	Low reverse recovery charge (Q_rr = 120 nC) minimizes voltage overshoot and EMI during freewheeling in synchronous rectifiers.
Lead-free and RoHS compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 - supports standard reflow profiles without baking.

Applications

DC-DC Buck Converter

Brushless DC Motor Inverter

Use Scenario: 48 V input to 12 V/30 A output step-down converter in telecom power shelves.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET operating at 300 kHz PWM frequency with gate drive from UCC27531.

Use Value: 9.1 mΩ R_DS(on) limits conduction loss to 2.7 W at full load, enabling >95% efficiency without forced air cooling.

Use Scenario: 3-phase inverter stage for 750 W BLDC fan in HVAC system.

IC Role / Device Role / Timing Role: Low-side switch in 6-step commutation, driven by IR2104 gate driver with bootstrap supply.

Use Value: 175 °C T_J max and 480 mJ E_AS ensure reliability during stall conditions and rapid direction reversal.

Industrial Power Supply

Automotive Auxiliary Load Switch

Use Scenario: 24 V input, 5 V/20 A output VRM for PLC I/O module.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side synchronous rectification stage.

Use Value: Soft-recovery body diode reduces EMI filter size by 30% compared to standard silicon diodes in same layout.

Use Scenario: 12 V battery-fed headlight leveling actuator with H-bridge control.

IC Role / Device Role / Timing Role: High-current half-bridge leg switch handling bidirectional 15 A peak motor current.

Use Value: 91 A I_D rating supports 3× peak surge current during startup without thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	R_DS(on) = 7.5 mΩ but Q_g = 82 nC; higher gate drive power required.	Better conduction loss at low frequency; less suitable above 250 kHz due to higher Q_g.	Prefer when thermal budget dominates switching loss, e.g., 100 kHz industrial SMPS.
IXTP90N06T	TO-220 package; R_DS(on) = 9.0 mΩ but no avalanche rating; T_J max = 175 °C.	Limited to through-hole designs; unsuitable for high-density surface-mount motor drives.	Select only for legacy board redesigns where D2PAK footprint cannot be accommodated.

Compared with STL220N6F7 and IXTP90N06T, IPB091N06N G delivers superior high-frequency efficiency via balanced Q_g/R_DS(on), proven avalanche ruggedness for inductive loads, and D2PAK thermal performance essential for compact industrial power modules.

Availability

IPB091N06N G is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor inverters, and industrial power supplies requiring stable component supply across multi-year production cycles.

Supply support for IPB091N06N G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

IPB091N06N G belongs to the OptiMOS™ 6 family, engineered specifically for high-efficiency, high-power-density power conversion in server, telecom, and industrial motor control applications.

FAQ

What is the maximum recommended gate-source voltage for IPB091N06N G?

The absolute maximum V_GS is ±20 V per Infineon's datasheet. Operation above +15 V provides no R_DS(on) improvement but increases gate oxide stress. Recommended drive is +10 V to +12 V for optimal conduction loss vs. reliability trade-off in continuous operation.

Does IPB091N06N G require a gate resistor for stability?

Yes - a 5–10 Ω series gate resistor is recommended to dampen parasitic oscillation caused by PCB trace inductance and gate-drain capacitance. This prevents unintended turn-on during high dV/dt events and ensures clean switching edges in half-bridge configurations.

Can IPB091N06N G be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) enables inherent current sharing. For two devices, use matched gate drive paths, symmetrical PCB layout, and individual 1 Ω gate resistors to minimize dynamic imbalance and ensure thermal uniformity across both units.

Is the D2PAK package lead-free compatible with standard reflow profiles?

Yes - IPB091N06N G is qualified to IPC-J-STD-020 MSL Level 1, allowing exposure to peak reflow temperatures up to 260 °C without preconditioning. The package uses matte tin plating and meets RoHS Directive 2011/65/EU requirements.

IPB091N06N G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 8.8mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 130µA

Gate Charge (Qg) (Max) @ Vgs:: 81 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 2800 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB091N06N G FAQ

1.How can I place an order for IPB091N06N G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB091N06N G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB091N06N G reliable?

The price and inventory of IPB091N06N G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB091N06N G is usually 5 days.

3.What payment methods are accepted for IPB091N06N G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB091N06N G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB091N06N G?

IPB091N06N G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB091N06N G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB091N06N G?

For technical support, including IPB091N06N G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB091N06N G requirements.

6.How does Aetrix verify that IPB091N06N G is sourced from the original manufacturer or authorized distributors?

All IPB091N06N G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB091N06N G meets industry standards.

7.What is the process for return or replacement of IPB091N06N G?

All IPB091N06N G units undergo pre-shipment inspection (PSI). If there is an issue with IPB091N06N G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB091N06N G part is unused and in its original packaging.

Return procedure for IPB091N06N G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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