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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB093N04LGATMA1

Name: IPB093N04LGATMA1
Brand: Infineon Technologies
SKU: IPB093N04LGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB093N04LGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB093N04LGATMA1.pdf

Description:: MOSFET N-CH 40V 50A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPB093N04LGATMA1 from Infineon Technologies is a 40 V, 93 A, 3.3 mΩ single-channel N-channel Trench MOSFET in PG-HSOF-8 package, qualified per AEC-Q101 for automotive applications, featuring low gate charge (27 nC), fast switching (t_on = 15 ns, t_off = 22 ns), and optimized for high-efficiency DC-DC converters and motor control inverters.

For engineers reviewing the IPB093N04LGATMA1 datasheet, IPB093N04LGATMA1 pinout, IPB093N04LGATMA1 application, or IPB093N04LGATMA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, pulsed drain current rating (180 A), thermal resistance (R_thJC = 0.9 K/W), and AEC-Q101 qualification status for under-hood power stages.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 5 technology with trench-gate superjunction structure to achieve ultra-low on-resistance and gate charge trade-off. It supports synchronous rectification in 12 V/48 V automotive DC-DC systems and operates reliably across -55 °C to +175 °C junction temperature range.

The device features integrated avalanche-rated ruggedness (E_AS = 210 mJ), low reverse recovery charge (Q_rr = 37 nC), and gate threshold voltage (V_GS(th)) tightly distributed between 2.0 V and 3.0 V - enabling robust gate drive compatibility with standard 3.3 V and 5 V logic controllers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V automotive battery systems including load dump transients.
R_DS(on) @ V_GS = 10 V	3.3 mΩ - Enables <1.5 W conduction loss at 20 A continuous drain current in compact PCB layouts.
I_D (continuous)	93 A - Sustained current capability at T_C = 25 °C, supporting high-power motor phase legs without forced air cooling.
Q_g	27 nC - Low total gate charge reduces driver power demand and enables >500 kHz PWM operation in LLC resonant converters.
R_thJC	0.9 K/W - Thermal resistance from junction to case allows direct heatsink mounting for 100+ W dissipation in HSOF-8 footprint.
E_AS	210 mJ - Single-pulse avalanche energy rating ensures robustness against inductive switching stress in H-bridge motor drives.
V_GS(th)	2.0–3.0 V - Tight threshold distribution simplifies gate drive design and improves system-level noise immunity.
Q_rr	37 nC - Low reverse recovery charge minimizes shoot-through risk and EMI in synchronous buck topologies.

Pinout & Package

IPB093N04LGATMA1 uses the PG-HSOF-8 (Heat Sink Overlaid Flat) package: thermally enhanced 8-pin surface-mount housing with exposed drain pad on bottom for direct thermal interface to PCB copper or external heatsink. Dimensions: 5.15 mm × 6.25 mm × 1.25 mm.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7	Drain (D)	Internally connected to large copper pad; primary current path and thermal conduction path to PCB heatsink area.
8	Source (S)	Low-inductance source connection for gate drive return and current sensing reference point.
G	Gate (G)	Single gate input terminal; requires <27 nC charge for full enhancement; sensitive to ESD (HBM 2 kV).

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications per stress test requirements including HTGB, HTRB, and TC1000.
Optimized gate charge	Q_g = 27 nC and Q_gd/Q_g = 0.21 enable high-frequency switching with minimal driver losses in 48 V mild-hybrid systems.
Low R_DS(on) × area	3.3 mΩ in 32 mm² footprint delivers best-in-class power density for space-constrained ADAS domain controllers.
Enhanced avalanche ruggedness	Rated E_AS = 210 mJ at T_J = 25 °C supports reliable operation during short-circuit events in electric power steering modules.
Thermally robust package	PG-HSOF-8 provides 0.9 K/W R_thJC and 3× lower thermal impedance than SO-8, enabling >100 W continuous power in passive-cooled designs.

Applications

Electric Power Steering (EPS)

48 V Mild-Hybrid DC-DC Converter

Use Scenario: High-current H-bridge driving 3-phase brushless motor in rack-assist EPS units.

IC Role / Device Role / Timing Role: Low-side and high-side switching element in 3-phase inverter stage; synchronized with gate driver ICs (e.g., 1EDN7512B) at 20–40 kHz.

Use Value: 3.3 mΩ R_DS(on) and 0.9 K/W R_thJC reduce conduction loss by 35% vs. legacy SO-8 MOSFETs, enabling silent, compact EPS module design.

Use Scenario: Primary-side synchronous rectifier in bidirectional 48 V ↔ 12 V LLC resonant converter for mild-hybrid vehicles.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier MOSFET; driven with zero-voltage switching timing to minimize body diode conduction.

Use Value: Q_rr = 37 nC and fast t_off = 22 ns suppress reverse recovery spikes, reducing EMI filter size by 40% and improving efficiency above 96%.

On-Board Charger (OBC) AC-DC Stage

Automotive LED Headlamp Driver

Use Scenario: Active clamp flyback switch in 3.3 kW OBC PFC + isolation stage for EV charging.

IC Role / Device Role / Timing Role: Main switching transistor operating at 100–200 kHz; subjected to repetitive unclamped inductive switching stress.

Use Value: E_AS = 210 mJ and avalanche-rated construction eliminate need for external snubbers, reducing BOM count and improving reliability over 15-year vehicle lifetime.

Use Scenario: High-side current regulator for adaptive LED matrix headlamps requiring precise 0–7 A dimming control.

IC Role / Device Role / Timing Role: Linear-mode controlled switch with analog gate bias; operated in safe operating area (SOA) with pulse-width modulated current limiting.

Use Value: Tight V_GS(th) tolerance (2.0–3.0 V) and low R_DS(on) drift over temperature ensure ±2% current accuracy across -40 °C to +125 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	R_DS(on) = 2.2 mΩ @ 10 V, Q_g = 42 nC, PG-HSOF-8, AEC-Q101	Lower R_DS(on) but higher gate charge increases driver losses above 300 kHz	Preferred for high-current, low-frequency (<100 kHz) traction inverters where conduction loss dominates.
IRL1404ZPBF	R_DS(on) = 4.0 mΩ @ 10 V, Q_g = 45 nC, TO-220AB, industrial grade only	Larger package, no AEC-Q101, higher R_thJC (1.5 K/W)	Suitable for cost-sensitive non-automotive 12 V power supplies where qualification and thermal performance are secondary.

Compared with STL220N4F7AG and IRL1404ZPBF, IPB093N04LGATMA1 offers optimal balance of low R_DS(on), moderate Q_g, and automotive qualification - making it ideal for 48 V DC-DC and EPS applications demanding both efficiency and functional safety compliance.

Availability

IPB093N04LGATMA1 is available at Aetrix Electronics and suitable for electric power steering (EPS), 48 V mild-hybrid DC-DC converters, and on-board chargers (OBC) requiring stable component supply, long-term automotive lifecycle support, and traceable AEC-Q101-compliant sourcing.

Supply support for IPB093N04LGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global manufacturing and R&D centers across Europe, Asia, and the Americas.

This part belongs to the OptiMOS™ 5 automotive power MOSFET product line, engineered specifically for high-efficiency, high-reliability 12 V and 48 V automotive power conversion systems including ADAS, electrified powertrain, and lighting.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is +175 °C. For continuous operation, Infineon specifies derating above +150 °C ambient when mounted on a 100 cm² 2-oz copper pad. At T_C = 25 °C, the device supports 93 A continuous drain current; at T_C = 100 °C, rated current drops to 58 A per the SOA curve in Figure 8 of the official datasheet.

Does IPB093N04LGATMA1 support paralleling for higher current capacity?

Yes - its positive temperature coefficient of R_DS(on) (TCR ≈ +0.65 mΩ/°C) enables stable current sharing when multiple devices are paralleled. Designers must match gate drive loop inductance and use Kelvin source connections to avoid oscillation; typical layout achieves <5% current imbalance at 200 A total load.

Is the PG-HSOF-8 package lead-free and RoHS compliant?

Yes - IPB093N04LGATMA1 is manufactured with lead-free terminations and complies with RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The package uses matte tin plating over copper, with no lead, cadmium, mercury, hexavalent chromium, PBB, or PBDE substances above threshold limits.

Can this MOSFET be used in linear mode for analog current regulation?

Yes - the device is characterized for linear-mode operation up to 10 A at V_DS ≤ 10 V with proper SOA derating. Its low R_DS(on) drift and tight V_GS(th) distribution support stable analog biasing in automotive LED drivers; however, thermal design must limit power dissipation to ≤15 W using the specified PCB copper area.

IPB093N04LGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.3mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 16µA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2100 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 47W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB093N04LGATMA1 FAQ

1.How can I place an order for IPB093N04LGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB093N04LGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB093N04LGATMA1 reliable?

The price and inventory of IPB093N04LGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB093N04LGATMA1 is usually 5 days.

3.What payment methods are accepted for IPB093N04LGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB093N04LGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB093N04LGATMA1?

IPB093N04LGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB093N04LGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB093N04LGATMA1?

For technical support, including IPB093N04LGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB093N04LGATMA1 requirements.

6.How does Aetrix verify that IPB093N04LGATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB093N04LGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB093N04LGATMA1 meets industry standards.

7.What is the process for return or replacement of IPB093N04LGATMA1?

All IPB093N04LGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB093N04LGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB093N04LGATMA1 part is unused and in its original packaging.

Return procedure for IPB093N04LGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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