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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB096N03LGATMA1

Name: IPB096N03LGATMA1
Brand: Infineon Technologies
SKU: IPB096N03LGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB096N03LGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB096N03LGATMA1.pdf

Description:: MOSFET N-CH 30V 35A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:4,432

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Product details

Overview

IPB096N03LGATMA1 from Infineon Technologies is an N-channel logic-level power MOSFET in PG-TO263-3 package, optimized for DC/DC converters and SMPS applications. It delivers 35 A continuous drain current at T_C = 100 °C with V_GS = 4.5 V, features 9.6 mΩ max R_DS(on) at V_GS = 10 V, and is avalanche rated for robustness in hard-switching topologies.

For engineers reviewing the IPB096N03LGATMA1 datasheet, IPB096N03LGATMA1 pinout, IPB096N03LGATMA1 application, or IPB096N03LGATMA1 equivalent, this device serves as a high-efficiency synchronous rectifier or primary-side switch in 12 V input industrial DC/DC modules, telecom POL converters, and automotive body control units requiring logic-level gate drive compatibility and low conduction loss.

Technical Context

This OptiMOS®3 MOSFET employs trench-gate technology to achieve ultra-low gate charge × R_DS(on) figure-of-merit (FOM), enabling fast switching with minimal switching losses. Its logic-level threshold (V_GS(th) = 1–2.2 V) ensures full enhancement with standard 3.3 V or 5 V microcontroller outputs.

The device supports high dv/dt immunity (6 kV/μs) and integrates an avalanche-rated body diode with Q_rr ≤ 10 nC, making it suitable for non-isolated buck, synchronous buck-boost, and OR-ing applications where reverse recovery behavior directly impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Max	30 V - Supports 12 V nominal bus systems with 2× safety margin against transients
R_DS(on) Max @ V_GS=10 V	9.6 mΩ - Enables ≤1.0 W conduction loss at 35 A, critical for thermally constrained PCB layouts
I_D Cont. @ T_C=100 °C	30 A - Sustains full load in compact heatsinked designs without derating
Q_g Total	15 nC - Low gate drive power requirement compatible with standard PWM controllers
E_AS Single Pulse	40 mJ - Withstands repetitive inductive turn-off energy in unclamped inductive loads
Thermal R_thJC	3.6 K/W - Enables direct thermal coupling to heatsink for >40 W power dissipation
Diode Q_rr	≤10 nC - Reduces switching loss and voltage overshoot during synchronous rectification

Pinout & Package

IPB096N03LGATMA1 uses the PG-TO263-3 (D²PAK) surface-mount package with isolated drain tab, optimized for high-current PCB mounting and thermal performance on 6 cm² copper area.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (low-side reference)	Common return path for load current; connects to ground plane or low-side shunt
Pin 2 (Gate)	Control input	Logic-level compatible; requires <2.2 V threshold for full enhancement
Pin 3 (Drain)	High-current output / heat sink interface	Exposed metal tab electrically connected to drain; must be insulated from chassis if floating

Key Features

Feature	Design Value
Optimized FOM (Q_g × R_DS(on))	Enables >95% efficiency in 300 kHz–1 MHz DC/DC converters with minimal gate drive loss
Avalanche-rated operation	Guarantees ruggedness under unclamped inductive switching without external snubbers
Low Q_rr body diode	Reduces cross-conduction loss and EMI in synchronous rectifier configurations
JEDEC-qualified reliability	Validated per J-STD-20 and JESD22 for industrial temperature cycling and humidity exposure
RoHS-compliant Pb-free plating	Meets EU Directive 2011/65/EU and supports lead-free reflow assembly processes

Applications

Server VRM

Automotive Body Control

Use Scenario: Point-of-load regulation for CPU/GPU core voltage in 1U rack servers.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter, operating at 500–800 kHz with 30 A per phase.

Use Value: 9.6 mΩ R_DS(on) and 15 nC Q_g minimize conduction + switching loss, enabling >94% efficiency at 12 V input.

Use Scenario: Power distribution switch for lighting, HVAC, and window lift modules in 12 V vehicle architectures.

IC Role / Device Role / Timing Role: High-side load switch controlled by 3.3 V CAN/LIN microcontroller GPIO.

Use Value: Logic-level V_GS(th) (1–2.2 V) ensures full turn-on with MCU I/O; avalanche rating handles inductive kickback from motors.

Industrial PLC I/O

Telecom DC/DC Module

Use Scenario: Solid-state relay replacement in programmable logic controller digital output cards.

IC Role / Device Role / Timing Role: Low-side switch driving 24 V solenoids and indicators with 100 ms pulse duty cycle.

Use Value: 35 A pulsed rating and 40 mJ E_AS eliminate need for external flyback diodes or clamps.

Use Scenario: Primary-side switch in isolated 48 V-to-12 V quarter-brick DC/DC converters for base station power supplies.

IC Role / Device Role / Timing Role: Hard-switched MOSFET in forward or active-clamp forward topology at 200–300 kHz.

Use Value: 6 kV/μs dv/dt immunity prevents false turn-on; low C_oss (660 pF max) reduces capacitive switching loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PBF	R_DS(on) = 12 mΩ @ 10 V; higher Q_g (21 nC); TO-220 package	Larger footprint and higher thermal resistance (R_thJC = 3.0 K/W but no exposed drain tab)	Prefer IPB096N03LGATMA1 for SMT density and lower gate drive loss in high-frequency designs
STL110N3LLH6	R_DS(on) = 9.5 mΩ @ 10 V; similar Q_g (14.5 nC); same D²PAK package	Lower avalanche energy (E_AS = 27 mJ) and no JEDEC qualification for industrial temp cycling	IPB096N03LGATMA1 preferred where sustained avalanche stress or extended lifetime validation is required

Compared with IRL3803PBF and STL110N3LLH6, IPB096N03LGATMA1 offers superior thermal interface via exposed drain tab, JEDEC-qualified reliability for harsh environments, and lowest combined conduction–switching loss in high-frequency DC/DC converters above 300 kHz.

Availability

IPB096N03LGATMA1 is available at Aetrix Electronics and suitable for server VRMs, automotive body control modules, and industrial PLC I/O systems requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for IPB096N03LGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.

This device belongs to the OptiMOS®3 product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in space-constrained and thermally demanding applications across computing, automotive, and industrial markets.

FAQ

Is IPB096N03LGATMA1 suitable for 3.3 V gate drive?

Yes. With a gate threshold voltage range of 1.0–2.2 V and guaranteed R_DS(on) ≤14.1 mΩ at V_GS = 4.5 V, it fully enhances using standard 3.3 V logic outputs. However, for lowest R_DS(on), 4.5 V or higher is recommended to ensure <10 mΩ operation under load.

What is the maximum PCB copper area needed for thermal performance?

The datasheet specifies optimal thermal performance with 6 cm² of 70 μm thick copper on FR4 PCB (40 mm × 40 mm), vertically mounted in still air. At this layout, R_thJA is 40 K/W, allowing ~25 W continuous dissipation before exceeding T_j = 175 °C.

Does IPB096N03LGATMA1 include integrated ESD protection?

No. This MOSFET does not integrate gate ESD protection diodes. External Zener clamping (e.g., 12 V TVS between gate and source) is recommended in systems exposed to handling or system-level ESD events per IEC 61000-4-2 Level 4.

Can it replace IPP096N03LG in existing designs?

Yes - IPB096N03LGATMA1 is the tape-and-reel packaged variant of IPP096N03LG, sharing identical electrical specs, thermal characteristics, and PG-TO263-3 mechanical outline. Only packaging format (reel vs. tube) differs; no layout or schematic changes are required.

IPB096N03LGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.6mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 42W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB096N03LGATMA1 FAQ

1.How can I place an order for IPB096N03LGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB096N03LGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB096N03LGATMA1 reliable?

The price and inventory of IPB096N03LGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB096N03LGATMA1 is usually 5 days.

3.What payment methods are accepted for IPB096N03LGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB096N03LGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB096N03LGATMA1?

IPB096N03LGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB096N03LGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB096N03LGATMA1?

For technical support, including IPB096N03LGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB096N03LGATMA1 requirements.

6.How does Aetrix verify that IPB096N03LGATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB096N03LGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB096N03LGATMA1 meets industry standards.

7.What is the process for return or replacement of IPB096N03LGATMA1?

All IPB096N03LGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB096N03LGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB096N03LGATMA1 part is unused and in its original packaging.

Return procedure for IPB096N03LGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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