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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB09N03LA

Name: IPB09N03LA
Brand: Infineon Technologies
SKU: IPB09N03LA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB09N03LA

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB09N03LA.pdf

Description:: MOSFET N-CH 25V 50A TO263-3

Quantity:: RFQ Add To RFQ list

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Inventory:9,367

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Product details

Overview

IPB09N03LA G from Infineon Technologies is an N-channel logic-level Power MOSFET in PG-TO263-3-2 package, rated for 25 V V_DS, 50 A continuous drain current at T_C = 25 °C, and 8.9 mΩ max R_DS(on) at V_GS = 10 V. It features dv/dt ruggedness (6 kV/µs), 175 °C maximum junction temperature, and is optimized for high-frequency DC/DC converters in server VRMs and POL modules.

For engineers reviewing the IPB09N03LA datasheet, IPB09N03LA pinout, IPB09N03LA application, or IPB09N03LA equivalent, key selection criteria include its low gate charge × R_DS(on) figure of merit (FOM), JEDEC-qualified reliability for industrial power stages, and thermal resistance (R_thJC = 2.4 K/W) enabling high-current operation on standard FR4 PCBs.

Technical Context

This OptiMOS®2 device uses trench-gate silicon technology to achieve low R_DS(on) and fast switching with controlled Q_gd (2.8–4.3 nC) and Q_gs (4.3–5.7 nC). Its gate threshold voltage (1.2–2.0 V typ.) ensures robust logic-level drive compatibility with 3.3 V and 5 V controllers.

The integrated body diode exhibits low forward voltage (0.99–1.2 V at I_F = 50 A, T_j = 25 °C) and low reverse recovery charge (Q_rr ≤ 10 nC), supporting synchronous rectification in buck converters without external Schottky replacement.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage compatible with 12 V input bus systems and 5 V logic control
R_DS(on) max	8.9 mΩ at V_GS = 10 V - Enables <1 W conduction loss at 30 A, critical for high-efficiency POL designs
I_D cont.	50 A at T_C = 25 °C - Supports high-current output stages without forced air cooling
Q_g total	10–13 nC - Low gate drive energy reduces controller loading and enables >1 MHz switching
R_thJC	2.4 K/W - Allows direct thermal coupling to heatsink or copper pour, simplifying thermal design
dv/dt rating	6 kV/µs - Ensures immunity to parasitic turn-on in hard-switched topologies
T_j max	175 °C - Permits operation in high-ambient environments such as telecom rectifiers and motor drives

Pinout & Package

PG-TO263-3-2 (D²PAK) package with exposed drain pad for thermal and electrical connection. Standard 3-terminal configuration: Gate (G), Drain (D), Source (S).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Logic-level input requiring ≤2.0 V threshold; low C_iss (1235–1642 pF) minimizes driver stress
Pin 2 (D)	Drain terminal / exposed pad	Main power path and primary thermal interface; connected directly to PCB copper for heat dissipation
Pin 3 (S)	Source terminal	Reference node for gate drive and current sensing; low-inductance layout essential for EMI control

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V - eliminates need for gate boosters in 3.3 V microcontroller-based designs
Low FOM (Q_g × R_DS(on))	~90–115 nC·mΩ - balances switching loss and conduction loss for optimal efficiency at 300–1000 kHz
JEDEC-qualified reliability	Qualified per J-STD-20/JESD22 - validated for reflow, humidity, and temperature cycling in industrial production
Enhanced dv/dt immunity	6 kV/µs rated - prevents false triggering during fast voltage transients in half-bridge configurations
Integrated robust body diode	Q_rr ≤ 10 nC, V_SD ≤ 1.2 V - enables synchronous rectification without external diode in buck converters

Applications

Server Point-of-Load (POL) Converter

Industrial DC/DC Module

Use Scenario: High-current, high-efficiency 12 V-to-1 V conversion for CPU/GPU core supplies in rack-mounted servers.

IC Role / Device Role / Timing Role: Synchronous high-side switch in multiphase buck converter, operating at 500–800 kHz with precise gate timing.

Use Value: 8.9 mΩ R_DS(on) and 13 nC Q_g enable >94% efficiency at 40 A load while maintaining thermal margin on 4-layer PCB.

Use Scenario: Compact 24 V-to-5 V isolated or non-isolated DC/DC module for PLC I/O power rails.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or secondary-side synchronous rectifier in LLC resonant topology.

Use Value: 175 °C T_j rating and 2.4 K/W R_thJC ensure stable operation under 70 °C ambient without derating in sealed enclosures.

Telecom Rectifier Unit

Motor Drive Half-Bridge

Use Scenario: Secondary-side synchronous rectification in 48 V telecom rectifier with 12 V output.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier paired with SiC diode or GaN HEMT in center-tapped or full-wave configuration.

Use Value: Low V_SD (0.99 V) and fast t_f (3.2–4.8 ns) reduce conduction loss and minimize reverse recovery losses vs. discrete Schottky.

Use Scenario: Low-voltage (<30 V) BLDC motor gate driver stage in fan/pump control modules.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge driving 12–24 V brushed or brushless motors at PWM frequencies up to 20 kHz.

Use Value: 50 A I_D rating and 6 kV/µs dv/dt immunity prevent shoot-through and gate oscillation during rapid commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PbF	R_DS(on) = 12 mΩ @ V_GS = 5 V; higher Q_g (24 nC); TO-220 package	Larger footprint and higher thermal resistance (R_thJC = 3.0 K/W); less suitable for high-density POL layouts	Prefer IPB09N03LA for space-constrained, high-frequency designs; choose IRL3803PbF only if TO-220 mechanical fit is mandatory
STL220N3LLH6	R_DS(on) = 1.8 mΩ @ V_GS = 10 V; 30 V rating; PowerFLAT 5x6 package	Lower R_DS(on) but reduced voltage margin; smaller thermal pad area limits power handling above 30 A	Select STL220N3LLH6 for ultra-low-loss <30 A applications with strict height constraints; retain IPB09N03LA for 50 A duty and 25 V system margin

Compared with IRL3803PbF and STL220N3LLH6, IPB09N03LA uniquely balances 50 A current capability, 2.4 K/W thermal resistance, and 8.9 mΩ R_DS(on) in a D²PAK package-making it optimal for thermally demanding, medium-voltage POL and industrial DC/DC where both current headroom and layout density matter.

Availability

IPB09N03LA G is available at Aetrix Electronics and suitable for server point-of-load converters, industrial DC/DC modules, and telecom rectifier units requiring stable component supply and long-term manufacturability.

Supply support for IPB09N03LA G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The OptiMOS®2 product line delivers high-performance, logic-level N-channel MOSFETs optimized for high-frequency switching in power conversion systems where efficiency, thermal performance, and reliability are critical.

FAQ

Is IPB09N03LA G suitable for synchronous rectification?

Yes. Its low reverse recovery charge (Q_rr ≤ 10 nC), low forward voltage (V_SD ≤ 1.2 V at 50 A), and fast fall time (t_f = 3.2–4.8 ns) make it well-suited as a synchronous rectifier in buck and forward converters. The body diode's soft recovery behavior reduces EMI compared to standard Schottky diodes.

What is the maximum safe operating frequency for IPB09N03LA G?

Based on its gate charge (Q_g = 10–13 nC) and switching times (t_r = 73–109 ns, t_f = 3.2–4.8 ns), IPB09N03LA G supports reliable operation up to 1 MHz in hard-switched topologies when driven with ≤2.7 Ω gate resistance and adequate PCB layout. Efficiency peaks between 300–800 kHz for typical POL applications.

Does IPB09N03LA G require a gate resistor for stability?

Yes. A series gate resistor (typically 1–5 Ω) is recommended to dampen ringing caused by gate-drain capacitance (C_rss = 61–92 pF) and PCB inductance. Without it, overshoot and oscillation may occur during fast switching, especially in half-bridge configurations with high dv/dt edges.

Can IPB09N03LA G be used in parallel configurations?

Yes, but with careful attention to layout symmetry and gate drive matching. Its positive temperature coefficient for R_DS(on) (increases with T_j) provides inherent current sharing. Use identical gate resistors, Kelvin source connections, and matched trace lengths to avoid imbalance-verified in multi-phase VRM reference designs from Infineon.

IPB09N03LA Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.9mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1642 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 63W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB09N03LA FAQ

1.How can I place an order for IPB09N03LA through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB09N03LA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB09N03LA reliable?

The price and inventory of IPB09N03LA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB09N03LA is usually 5 days.

3.What payment methods are accepted for IPB09N03LA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB09N03LA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB09N03LA?

IPB09N03LA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB09N03LA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB09N03LA?

For technical support, including IPB09N03LA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB09N03LA requirements.

6.How does Aetrix verify that IPB09N03LA is sourced from the original manufacturer or authorized distributors?

All IPB09N03LA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB09N03LA meets industry standards.

7.What is the process for return or replacement of IPB09N03LA?

All IPB09N03LA units undergo pre-shipment inspection (PSI). If there is an issue with IPB09N03LA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB09N03LA part is unused and in its original packaging.

Return procedure for IPB09N03LA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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