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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB09N03LA G

Name: IPB09N03LA G
Brand: Infineon Technologies
SKU: IPB09N03LA G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB09N03LA G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB09N03LA G.pdf

Description:: MOSFET N-CH 25V 50A TO263-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPB09N03LA G from Infineon Technologies is an N-channel logic-level OptiMOS®2 power MOSFET in PG-TO263-3-2 package, rated for 25 V V_DS, 8.9 mΩ R_DS(on) (max) at V_GS = 10 V, 50 A continuous drain current at T_C = 25 °C, and 175 °C maximum junction temperature-designed for high-frequency DC/DC converters in server VRMs and POL modules.

For engineers reviewing the IPB09N03LA G datasheet, IPB09N03LA G pinout, IPB09N03LA G application, or IPB09N03LA G equivalent, key selection criteria include its low gate charge × R_DS(on) figure of merit (FOM), dv/dt ruggedness (6 kV/µs), and thermal resistance (R_thJC = 2.4 K/W), critical for compact, high-efficiency synchronous buck stages.

Technical Context

This device employs a trench-based silicon process optimized for low conduction and switching losses in high-duty-cycle, high-frequency synchronous rectification. Its gate threshold voltage (1.2–2.0 V typ.) enables direct drive from 3.3 V or 5 V logic controllers without level-shifting.

It features integrated body diode with Q_rr = 10 nC (typ.) and V_SD = 0.99–1.2 V at I_F = 50 A, supporting efficient reverse recovery in hard-switched and resonant topologies. The 2.4 K/W junction-to-case thermal resistance supports high-power density mounting on 40 mm × 40 mm FR4 PCBs with 6 cm² copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage compatible with 12 V input bus systems and 5 V output rails.
R_DS(on) max	8.9 mΩ at V_GS = 10 V - Enables <1 W conduction loss at 30 A, reducing thermal footprint in POL converters.
I_D cont.	50 A at T_C = 25 °C - Supports high-current single-phase buck stages without paralleling.
Q_g total	10–13 nC - Low gate charge minimizes driver power and enables >1 MHz switching with standard gate drivers.
R_thJC	2.4 K/W - Allows direct heatsink mounting for sustained 40+ W dissipation in industrial-grade thermal environments.
dv/dt rating	6 kV/µs - Ensures robustness against parasitic ringing and false turn-on in fast-switching layouts.
T_j max	175 °C - Rated for continuous operation in high-ambient environments such as telecom base stations and industrial PLCs.

Pinout & Package

IPB09N03LA G uses the PG-TO263-3-2 (D²PAK) surface-mount package with exposed drain pad for thermal and electrical connection. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Accepts logic-level gate drive (3.3 V/5 V); low C_iss (1235–1642 pF) reduces Miller effect.
Pin 2 (Drain)	Main power output node	Internally connected to large copper tab; serves as primary thermal path and high-current return path.
Pin 3 (Source)	Reference node for gate drive	Provides low-inductance source return; must be tightly coupled to gate driver ground for stable switching.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V, enabling direct interface with microcontrollers and PWM ICs without external level shifters.
Low FOM (Q_g × R_DS(on))	~90–115 nC·mΩ - Optimized trade-off between switching speed and conduction loss for 300 kHz–2 MHz DC/DC designs.
Enhanced dv/dt immunity	6 kV/µs rated - Prevents spurious turn-on during high-slew-rate transitions in half-bridge configurations.
High-temperature operation	175 °C T_j max with full R_DS(on) derating - Maintains performance in sealed enclosures or high-ambient industrial settings.
RoHS-compliant Pb-free plating	Meets JEDEC J-STD-20 reflow profile - Compatible with lead-free SMT assembly processes up to 260 °C peak.

Applications

Server Point-of-Load Converter

Industrial Motor Drive Half-Bridge

Use Scenario: High-current, high-efficiency 12 V → 1.2 V conversion for CPU/GPU VRMs in data center servers.

IC Role / Device Role / Timing Role: Synchronous rectifier (low-side switch) in multiphase buck converter, operating at 500 kHz–1 MHz with tight duty cycle control.

Use Value: 8.9 mΩ R_DS(on) and 10–13 nC Q_g reduce both conduction and switching losses, improving system efficiency by ≥1.2% at 40 A load.

Use Scenario: Half-bridge output stage driving 24 V BLDC motors in factory automation actuators.

IC Role / Device Role / Timing Role: Low-side power switch with fast turn-off (t_f = 3.2–4.8 ns) and robust dv/dt immunity for commutation noise suppression.

Use Value: 6 kV/µs dv/dt rating prevents shoot-through during high-di/dt motor phase transitions, increasing reliability in EMI-heavy environments.

Telecom Power Supply

Automotive ADAS Camera Module

Use Scenario: 48 V → 12 V intermediate bus converter in 5G remote radio units.

IC Role / Device Role / Timing Role: Primary switch in active-clamp forward topology, leveraging low Q_gd (2.8–4.3 nC) for reduced Miller plateau time.

Use Value: Low reverse transfer capacitance (C_rss = 61–92 pF) improves gate drive stability under high V_DS slew rates, minimizing cross-conduction risk.

Use Scenario: Compact 12 V → 3.3 V power rail for image sensor and ISP in automotive surround-view cameras.

IC Role / Device Role / Timing Role: High-side load switch with integrated body diode used for reverse-polarity protection and inrush limiting.

Use Value: 175 °C T_j rating and qualified JEDEC reliability ensure uninterrupted operation in under-hood ambient temperatures up to 125 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PbF	R_DS(on) = 12 mΩ @ V_GS = 5 V; higher Q_g (24 nC); TO-220 package	Larger footprint, lower thermal performance (R_thJC ≈ 3.5 K/W), unsuitable for high-density SMT designs	Prefer IPB09N03LA G where board space, thermal management, and >500 kHz switching are required.
BSC0902LS	R_DS(on) = 9.0 mΩ @ V_GS = 10 V; similar Q_g (11 nC); same PG-TO263-3-2 package	Near-identical electrical specs but lacks dv/dt rating documentation and JEDEC qualification for automotive/industrial use	Choose IPB09N03LA G when dv/dt ruggedness and JEDEC qualification for harsh environments are mandatory.

Compared with IRL3803PbF and BSC0902LS, IPB09N03LA G uniquely combines JEDEC qualification, 6 kV/µs dv/dt rating, and 2.4 K/W thermal resistance in a D²PAK package-making it optimal for high-reliability, high-frequency, thermally constrained synchronous buck applications.

Availability

IPB09N03LA G is available at Aetrix Electronics and suitable for server point-of-load converters, industrial motor drive half-bridges, and telecom intermediate bus supplies requiring stable component supply and long-term lifecycle support.

Supply support for IPB09N03LA G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

IPB09N03LA G belongs to the OptiMOS®2 power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing, telecom, and industrial power systems where low R_DS(on), low gate charge, and thermal robustness are critical.

FAQ

Is IPB09N03LA G suitable for synchronous rectification in a 1 MHz buck converter?

Yes. With Q_g = 10–13 nC, t_f = 3.2–4.8 ns, and R_DS(on) = 7.4–8.9 mΩ at V_GS = 10 V, it delivers low switching and conduction losses at 1 MHz. Its low C_rss (61–92 pF) also suppresses Miller-induced turn-on, making it well-suited for high-frequency synchronous rectification.

What is the maximum continuous drain current at T_C = 100 °C?

The maximum continuous drain current is 46 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures, with junction temperature limited to 175 °C.

Does IPB09N03LA G have avalanche energy rating?

Yes. It is rated for 75 mJ single-pulse avalanche energy (E_AS) at I_D = 45 A, R_GS = 25 Ω, confirming ruggedness against inductive switching transients-critical for motor drive and relay-driving applications where unclamped inductive loads may occur.

Can IPB09N03LA G be mounted directly to a heatsink?

Yes. The PG-TO263-3-2 package features an exposed drain pad that serves as both the main current path and thermal interface. When mounted with thermal interface material to a heatsink, it achieves R_thJC = 2.4 K/W, enabling efficient heat extraction for sustained high-power operation.

IPB09N03LA G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.9mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1642 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 63W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB09N03LA G FAQ

1.How can I place an order for IPB09N03LA G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB09N03LA G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB09N03LA G reliable?

The price and inventory of IPB09N03LA G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB09N03LA G is usually 5 days.

3.What payment methods are accepted for IPB09N03LA G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB09N03LA G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB09N03LA G?

IPB09N03LA G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB09N03LA G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB09N03LA G?

For technical support, including IPB09N03LA G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB09N03LA G requirements.

6.How does Aetrix verify that IPB09N03LA G is sourced from the original manufacturer or authorized distributors?

All IPB09N03LA G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB09N03LA G meets industry standards.

7.What is the process for return or replacement of IPB09N03LA G?

All IPB09N03LA G units undergo pre-shipment inspection (PSI). If there is an issue with IPB09N03LA G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB09N03LA G part is unused and in its original packaging.

Return procedure for IPB09N03LA G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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