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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB09N03LAT

Name: IPB09N03LAT
Brand: Infineon Technologies
SKU: IPB09N03LAT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB09N03LAT

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB09N03LAT.pdf

Description:: MOSFET N-CH 25V 50A TO263-3

Quantity:: RFQ Add To RFQ list

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Inventory:7,449

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Product details

Overview

IPB09N03LAT from Infineon Technologies is an N-channel logic-level OptiMOS®2 power MOSFET in PG-TO263-3-2 package, rated for 25 V V_DS, 8.9 mΩ R_DS(on) (max) at V_GS = 10 V, and 50 A continuous drain current at T_C = 25 °C. It features dv/dt ruggedness, 175 °C operation, and is optimized for high-frequency DC/DC converters in server VRMs and POL modules.

For engineers reviewing the IPB09N03LAT datasheet, IPB09N03LAT pinout, IPB09N03LAT application, or IPB09N03LAT equivalent, key selection criteria include its low gate charge × R_DS(on) figure of merit (FOM), 4.5 V logic-level drive compatibility, thermal resistance of 2.4 K/W (junction-to-case), and avalanche energy rating of 75 mJ (single pulse).

Technical Context

This MOSFET employs a trench-based silicon process to achieve low R_DS(on) and fast switching with controlled Q_gd/Q_gs ratio. Its gate threshold voltage (1.2–2.0 V typ) enables reliable turn-on with standard 3.3 V or 5 V logic, while the 3.5 V gate plateau voltage supports stable Miller region control during hard switching.

Designed for synchronous rectification and high-side/low-side switching, it delivers 12.1 mΩ R_DS(on) (typ) at V_GS = 4.5 V and I_D = 30 A, with C_iss = 1642 pF and Q_g = 13 nC - enabling efficient operation up to 1 MHz in buck converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage for 12 V input rail applications with margin
R_DS(on) max	8.9 mΩ at V_GS = 10 V - Enables <1.5 W conduction loss at 40 A in POL stages
I_D cont	50 A at T_C = 25 °C - Supported by low R_thJC = 2.4 K/W for direct heatsink mounting
Q_g	13 nC - Low total gate charge reduces driver power and EMI in high-frequency switching
E_AS	75 mJ - Withstands single-pulse inductive energy without failure in non-clamped topologies
dv/dt rating	6 kV/µs - Ensures robustness against parasitic ringing in fast-switching synchronous buck circuits
T_j max	175 °C - Supports operation in thermally constrained environments like sealed server chassis

Pinout & Package

IPB09N03LAT uses the PG-TO263-3-2 surface-mount package (D²PAK variant), featuring isolated drain tab for PCB heatsinking and three terminals: Drain (Tab), Source (Pin 2), Gate (Pin 1). The drain tab is electrically connected to the internal die drain and must be soldered to a large copper area for thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output	Exposed metal tab - primary thermal path; requires ≥6 cm² copper pour for R_thJA = 40 K/W
Source (Pin 2)	Reference node for gate drive and current sensing	Low-inductance connection critical for accurate gate control and Kelvin sensing in high-di/dt designs
Gate (Pin 1)	Control terminal for channel modulation	High-impedance input requiring <13 nC charge; sensitive to layout-induced ringing due to low V_GS(th)

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4.5 V - compatible with 3.3 V microcontrollers and PWM controllers without level shifters
Low FOM (Q_g × R_DS(on))	~116 nC·mΩ - balances switching loss and conduction loss for optimal efficiency at 300–1000 kHz
dv/dt ruggedness	Rated 6 kV/µs - prevents false turn-on in high-di/dt synchronous rectifier configurations
175 °C junction rating	Enables derating-free operation in ambient >105 °C environments such as base station power supplies
RoHS-compliant plating	Pb-free lead finish - meets IPC-J-STD-020 moisture sensitivity level 3 (MSL3) for standard SMT reflow

Applications

Server Point-of-Load (POL) Converters

Industrial Motor Drive Half-Bridge Stages

Use Scenario: High-current, high-efficiency 12 V → 1.2 V conversion for CPU/GPU VRMs in data center servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 500–800 kHz with tight dead-time control.

Use Value: 8.9 mΩ R_DS(on) minimizes conduction loss under 45 A load; 13 nC Q_g enables low driver loss and clean gate transitions.

Use Scenario: Half-bridge output stage in 24 V servo drives controlling brushed DC or stepper motors.

IC Role / Device Role / Timing Role: High-side and low-side switching element with integrated body diode used for freewheeling and regenerative braking.

Use Value: 75 mJ E_AS withstands inductive kickback during rapid current reversal; 175 °C rating ensures reliability under sustained 100% duty cycle.

Telecom DC/DC Brick Modules

Automotive Body Control Module (BCM) Power Switches

Use Scenario: Input-stage synchronous rectification in 48 V telecom rectifiers delivering 20–40 A output.

IC Role / Device Role / Timing Role: Primary switching FET in interleaved buck converters with phase-shifted gate drive.

Use Value: 2.4 K/W R_thJC allows direct heatsink attachment for compact 1U form factor; dv/dt rating suppresses shoot-through risk.

Use Scenario: Load switching for high-current solenoids, fans, and lighting in 12 V automotive BCMs.

IC Role / Device Role / Timing Role: Single-ended high-side or low-side power switch controlled via CAN/LIN interface drivers.

Use Value: Logic-level V_GS(th) (1.6 V typ) ensures full enhancement with 5 V MCU outputs; -55 °C to 175 °C rating covers under-hood thermal extremes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PbF	R_DS(on) = 12 mΩ @ 4.5 V; Q_g = 27 nC; TO-220 package	Higher gate charge increases driver loss; through-hole mounting limits board density	Preferred where cost-sensitive, lower-frequency (<300 kHz), or legacy through-hole assembly is required
STL110N3LLH6	R_DS(on) = 3.3 mΩ @ 4.5 V; Q_g = 34 nC; PowerFLAT 5x6 package	Lower R_DS(on) but higher Q_g; smaller footprint lacks exposed drain tab for heatsinking	Better for space-constrained, low-voltage (<5 V) applications where thermal budget permits no external heatsink

Compared with IRL3803PbF and STL110N3LLH6, IPB09N03LAT offers the best balance of low R_DS(on), moderate Q_g, and thermal performance via its D²PAK drain tab - making it optimal for high-power-density, air-cooled 25 V synchronous buck designs.

Availability

IPB09N03LAT is available at Aetrix Electronics and suitable for server point-of-load converters, industrial motor drive half-bridges, and telecom DC/DC brick modules requiring stable component supply and long-term production continuity.

Supply support for IPB09N03LAT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101 standards.

This device belongs to the OptiMOS®2 power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing, telecom, and industrial power systems where low R_DS(on) and fast switching are critical.

FAQ

What is the maximum recommended gate-source voltage for IPB09N03LAT?

The absolute maximum V_GS is ±20 V per datasheet Rev. 1.6. Operation above ±12 V risks accelerated gate oxide degradation, especially at elevated temperature. For reliable long-term use, keep V_GS ≤ ±10 V in normal switching and ≤ ±15 V only during brief transient conditions with verified clamping.

Can IPB09N03LAT be used in avalanche mode repeatedly?

No - the 75 mJ E_AS rating applies only to single-pulse avalanche events. Repetitive avalanche operation is not characterized or guaranteed and may cause cumulative die damage. Designers must ensure SOA compliance and avoid operation beyond the safe operating area curves on page 4 of the datasheet.

Is the drain tab electrically isolated from the PCB substrate?

No - the drain tab is internally connected to the MOSFET's drain terminal and is not insulated. When mounted on a PCB, it must be placed over a dedicated drain copper pour that is either floating or tied to the drain net. Use of insulating thermal pads or isolation gaskets is required if the heatsink is grounded.

Does IPB09N03LAT have a specified reverse recovery time (t_rr) for its body diode?

No - t_rr is not specified. Instead, the datasheet provides Q_rr = 10 nC (typ) at V_R = 15 V, I_F = I_S, and di_F/dt = 400 A/µs. Designers should use Q_rr and di_F/dt to estimate recovery losses and select appropriate snubbing or synchronous control strategies.

IPB09N03LAT Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.9mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1642 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 63W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB09N03LAT FAQ

1.How can I place an order for IPB09N03LAT through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB09N03LAT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB09N03LAT reliable?

The price and inventory of IPB09N03LAT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB09N03LAT is usually 5 days.

3.What payment methods are accepted for IPB09N03LAT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB09N03LAT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB09N03LAT?

IPB09N03LAT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB09N03LAT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB09N03LAT?

For technical support, including IPB09N03LAT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB09N03LAT requirements.

6.How does Aetrix verify that IPB09N03LAT is sourced from the original manufacturer or authorized distributors?

All IPB09N03LAT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB09N03LAT meets industry standards.

7.What is the process for return or replacement of IPB09N03LAT?

All IPB09N03LAT units undergo pre-shipment inspection (PSI). If there is an issue with IPB09N03LAT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB09N03LAT part is unused and in its original packaging.

Return procedure for IPB09N03LAT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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