Infineon Technologies IPB100N04S2L03ATMA1

Overview

IPB100N04S2L03ATMA1 from Infineon Technologies is an N-channel logic-level enhancement-mode MOSFET optimized for automotive and high-current DC-DC power stages. It delivers 100 A continuous drain current at T_C = 25 °C, 40 V V_DS, and ultra-low 2.1–3.3 mΩ R_DS(on) at V_GS = 10 V, with AEC-Q101 qualification and 175 °C operation-used in 48 V boardnet motor control inverters.

For engineers reviewing the IPB100N04S2L03ATMA1 datasheet, IPB100N04S2L03ATMA1 pinout, IPB100N04S2L03ATMA1 application, or IPB100N04S2L03ATMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, single-pulse avalanche energy (810 mJ), thermal resistance (R_thJC = 0.5 K/W), and TO-263-3 package compatibility with high-power PCB layouts.

Technical Context

This OptiMOS® device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance. Its gate threshold voltage (1.2–2.0 V) enables direct logic-level drive from 3.3 V/5 V microcontrollers, and its 700 pF Crss supports stable hard-switching in synchronous buck converters up to 200 kHz.

The integrated body diode features 80 ns t_rr and 150–190 nC Q_rr, enabling efficient freewheeling in H-bridge motor drives. Thermal design is anchored by a 0.5 K/W junction-to-case resistance, allowing sustained 100 A operation with minimal heatsink mass when mounted on ≥6 cm² copper area.

Key Specifications

Pinout & Package

IPB100N04S2L03ATMA1 is housed in PG-TO263-3-2 (D²PAK) surface-mount package with isolated drain tab for PCB thermal management. The three terminals are arranged in standard D²PAK footprint: Pin 1 = Gate, Pin 2 = Source, Pin 3 = Drain (tab).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPP100N04S2L-03 and IRFB4115PBF, IPB100N04S2L03ATMA1 offers superior thermal performance in SMT layouts, guaranteed automotive reliability, and lower gate charge-making it optimal for volume production of space-constrained, high-reliability power stages.

Availability

IPB100N04S2L03ATMA1 is available at Aetrix Electronics and suitable for automotive electrification, industrial motor control, and server power delivery requiring stable component supply and long-term lifecycle support.

Supply support for IPB100N04S2L03ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS® 40 V product line, engineered specifically for high-current, high-efficiency switching in automotive 12 V/48 V systems and industrial power supplies where low R_DS(on) and robust avalanche performance are mandatory.

FAQ

What is the maximum safe operating temperature for IPB100N04S2L03ATMA1?

The device is rated for continuous operation up to 175 °C junction temperature, verified per AEC-Q101 stress tests. Case temperature must remain ≤100 °C when delivering 100 A to maintain this limit, assuming R_thJC = 0.5 K/W and adequate PCB copper area (≥6 cm²). Derating curves in the datasheet define safe current limits at elevated ambient temperatures.

Can IPB100N04S2L03ATMA1 be driven directly by a 3.3 V microcontroller?

Yes-its logic-level gate threshold (1.2–2.0 V) and guaranteed R_DS(on) at V_GS = 4.5 V enable full enhancement with 3.3 V GPIO, though gate resistor selection must limit peak current to avoid MCU pin damage. For reliable 100 A switching, a dedicated gate driver is recommended to manage 230 nC total charge within target rise time.

Is the drain tab electrically isolated from the PCB mounting surface?

No-the drain (Pin 3) is internally connected to the exposed copper tab, which must be soldered to a PCB copper pour serving as both electrical node and thermal interface. This tab is not insulated; isolation requires a thermally conductive but electrically isolating pad (e.g., ceramic-filled thermal interface material) if system grounding topology demands it.

Does IPB100N04S2L03ATMA1 include an integrated Schottky diode?

No-it contains a standard silicon body diode inherent to the MOSFET structure, characterized by V_SD = 0.9–1.3 V and t_rr = 80–100 ns at 80 A. While not a discrete Schottky, its fast recovery and low forward drop make it suitable for freewheeling in hard-switched topologies without external diode supplementation.