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Infineon Technologies IPB100N04S2L03ATMA2

Name: IPB100N04S2L03ATMA2
Brand: Infineon Technologies
SKU: IPB100N04S2L03ATMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB100N04S2L03ATMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB100N04S2L03ATMA2.pdf

Description:: MOSFET N-CH 40V 100A TO263-3

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Inventory:2,950

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Product details

Overview

IPB100N04S2L03ATMA2 from Infineon Technologies is an N-channel logic-level automotive-grade MOSFET in PG-TO263-3-2 (D²PAK) package, rated for 40 V V_DS, 100 A continuous drain current at T_C = 25 °C, and ultra-low 2.1–3.3 mΩ R_DS(on) at V_GS = 10 V. It is AEC-Q101 qualified, 100% avalanche tested, and operates up to 175 °C - deployed in high-current DC-DC converters and motor control stages of EV onboard chargers.

For engineers reviewing the IPB100N04S2L03ATMA2 datasheet, IPB100N04S2L03ATMA2 pinout, IPB100N04S2L03ATMA2 application, or IPB100N04S2L03ATMA2 equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = 1.2–2.0 V), low thermal resistance (R_thJC = 0.5 K/W), and robust 810 mJ single-pulse avalanche energy rating.

Technical Context

This OptiMOS® power transistor uses trench-based silicon technology optimized for low R_DS(on) and fast switching with minimal gate charge (Q_g = 163–230 nC). Its gate threshold voltage (1.2–2.0 V) enables direct interfacing with 3.3 V/5 V microcontrollers without level-shifting circuitry.

The device integrates a robust body diode with t_rr = 80–100 ns and Q_rr = 150–190 nC, supporting synchronous rectification and hard-switched topologies. Thermal design is enabled by its 0.5 K/W junction-to-case resistance and MSL1 reflow compatibility up to 260 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/24 V automotive and industrial power rails
R_DS(on) max @ V_GS=10 V	3.3 mΩ - Enables <1.5 W conduction loss at 80 A, reducing heatsink requirements
I_D continuous @ T_C=25 °C	100 A - Supports high-current motor phases and battery-side switches in traction inverters
E_AS (single pulse)	810 mJ - Withstands inductive turn-off surges without clamping circuits in 48 V systems
Q_g total	163–230 nC - Determines gate driver power demand and switching speed trade-off in 100 kHz+ SMPS
t_r/t_f	51 ns / 27 ns - Enables fast transitions with controlled EMI in compact power modules
T_j max	175 °C - Sustains operation under hood conditions and high ambient industrial environments

Pinout & Package

IPB100N04S2L03ATMA2 is housed in PG-TO263-3-2 (D²PAK) surface-mount package with exposed drain pad for thermal enhancement. The three terminals are arranged in standard D²PAK footprint: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Accepts logic-level input (3.3 V/5 V); requires ≤230 nC charge for full enhancement
Pin 2 (Drain)	High-side power terminal	Exposed copper tab - primary thermal path to PCB; electrically connected to drain
Pin 3 (Source)	Reference node	Return path for load current; ties to gate driver ground for accurate V_GS control

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis applications per stress test requirements
Logic-level gate drive	V_GS(th) = 1.2–2.0 V enables direct MCU GPIO control without external level shifters
Ultra-low R_DS(on)	2.1–3.3 mΩ @ V_GS=10 V reduces conduction losses by >30% vs. legacy 40 V MOSFETs
100% avalanche tested	Each unit verified for 810 mJ single-pulse energy - ensures reliability in unclamped inductive switching
MSL1 reflow rating	Compatible with standard lead-free SMT assembly up to 260 °C peak temperature

Applications

Onboard Charger (OBC) DC-DC Stage

48 V Mild Hybrid Motor Inverter

Use Scenario: High-efficiency bidirectional DC-DC conversion between 400 V battery and 12 V auxiliary rail.

IC Role / Device Role / Timing Role: Primary high-side switch in synchronous buck topology operating at 100–200 kHz.

Use Value: Low R_DS(on) and fast switching minimize conduction + switching losses, enabling >97% efficiency at 3 kW output.

Use Scenario: Traction inverter phase leg for 48 V belt-driven starter-generator (BISG).

IC Role / Device Role / Timing Role: Low-side power switch in 3-phase IGBT/MOSFET half-bridge module.

Use Value: 175 °C rating and 100 A current capability support sustained torque delivery under engine start-stop cycles.

Industrial UPS Inverter Output Stage

EV Battery Management System (BMS) Precharge Circuit

Use Scenario: Grid-tied inverter output stage delivering clean 230 V AC from 48 V DC bus.

IC Role / Device Role / Timing Role: High-current switching element in H-bridge configuration with sinusoidal PWM.

Use Value: Robust body diode (t_rr = 80–100 ns) supports zero-voltage switching and reduces reverse recovery losses.

Use Scenario: Controlled precharge of high-capacitance DC-link before main contactor closure in 800 V EV battery packs.

IC Role / Device Role / Timing Role: Current-limited soft-start switch placed between battery and DC-link capacitor.

Use Value: Avalanche ruggedness (810 mJ) prevents failure during repeated precharge events with large dI/dt transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP100N04S2L-03	Same die, TO-220-3-1 through-hole package; R_thJA = 62 K/W (vs. 40 K/W on PCB for IPB)	Better suited for prototyping and low-volume industrial controls where manual assembly is preferred	Select IPP variant when thermal management via heatsink mounting is prioritized over PCB-area efficiency
IPB120N04S4-02	Newer OptiMOS™ 4 generation; lower R_DS(on) (2.0 mΩ typ), higher Q_g (270 nC), same D²PAK package	Optimized for higher-frequency (>300 kHz) resonant converters where lower conduction loss outweighs gate drive overhead	Choose IPB120N04S4-02 only if system operates above 250 kHz and gate driver can supply >270 nC

Compared with IPP100N04S2L-03, IPB100N04S2L03ATMA2 offers superior PCB thermal performance (R_thJA = 40 K/W vs. 62 K/W) and surface-mount scalability; versus IPB120N04S4-02, it trades slightly higher R_DS(on) for significantly lower gate charge - favoring cost-sensitive, medium-frequency motor drives.

Availability

IPB100N04S2L03ATMA2 is available at Aetrix Electronics and suitable for automotive onboard chargers, 48 V mild hybrid inverters, and industrial UPS systems requiring stable component supply across multi-year production cycles.

Supply support for IPB100N04S2L03ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS® 2nd-generation power MOSFET product line, engineered specifically for high-current, high-reliability automotive and industrial switching applications demanding low R_DS(on), logic-level drive, and extended temperature operation.

FAQ

Is IPB100N04S2L03ATMA2 pin-compatible with IPP100N04S2L-03?

No - IPB100N04S2L03ATMA2 uses PG-TO263-3-2 (D²PAK) surface-mount packaging, while IPP100N04S2L-03 uses PG-TO220-3-1 through-hole packaging. Footprints, thermal mounting, and assembly processes differ; mechanical adaptation is required for substitution.

What is the maximum recommended gate resistor value for 100 kHz switching?

Based on Q_g = 230 nC and typical gate driver rise time targets, a 10 Ω series gate resistor is recommended to limit peak current while maintaining t_r < 60 ns. Values above 22 Ω increase switching losses disproportionately in high-frequency operation.

Does this MOSFET require a negative gate turn-off voltage?

No - the device has no requirement for negative V_GS during turn-off. Standard 0 V to 10 V gate drive is sufficient. Negative bias is unnecessary due to low V_GS(th) hysteresis and absence of parasitic turn-on risk under normal layout practices.

Can IPB100N04S2L03ATMA2 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (increasing with T_j) enables stable current sharing. For reliable paralleling, match gate resistors within ±5%, ensure symmetrical PCB layout, and maintain identical thermal paths to avoid thermal runaway.

IPB100N04S2L03ATMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 230 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB100N04S2L03ATMA2 FAQ

1.How can I place an order for IPB100N04S2L03ATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB100N04S2L03ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB100N04S2L03ATMA2 reliable?

The price and inventory of IPB100N04S2L03ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB100N04S2L03ATMA2 is usually 5 days.

3.What payment methods are accepted for IPB100N04S2L03ATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB100N04S2L03ATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB100N04S2L03ATMA2?

IPB100N04S2L03ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB100N04S2L03ATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB100N04S2L03ATMA2?

For technical support, including IPB100N04S2L03ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB100N04S2L03ATMA2 requirements.

6.How does Aetrix verify that IPB100N04S2L03ATMA2 is sourced from the original manufacturer or authorized distributors?

All IPB100N04S2L03ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB100N04S2L03ATMA2 meets industry standards.

7.What is the process for return or replacement of IPB100N04S2L03ATMA2?

All IPB100N04S2L03ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPB100N04S2L03ATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB100N04S2L03ATMA2 part is unused and in its original packaging.

Return procedure for IPB100N04S2L03ATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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