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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB100N04S303ATMA1

Name: IPB100N04S303ATMA1
Brand: Infineon Technologies
SKU: IPB100N04S303ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB100N04S303ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB100N04S303ATMA1.pdf

Description:: MOSFET N-CH 40V 100A TO263-3

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Product details

Overview

IPB100N04S303ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode MOSFET in PG-TO263-3-2 package, rated for 40 V V_DS, 2.5 mΩ R_DS(on) (SMD version), 100 A continuous drain current at T_C = 100 °C, and 175 °C maximum junction temperature. It serves as a high-current power switch in automotive DC-DC converters and motor control inverters.

For engineers reviewing the IPB100N04S303ATMA1 datasheet, IPB100N04S303ATMA1 pinout, IPB100N04S303ATMA1 application, or IPB100N04S303ATMA1 equivalent, key selection criteria include ultra-low on-resistance, 100% avalanche energy rating (898 mJ), thermal resistance R_thJC = 0.7 K/W, and compliance with automotive reflow and operating temperature requirements.

Technical Context

This OptiMOS®-T device uses trench-gate superjunction technology to achieve low R_DS(on) × Q_g figure-of-merit while maintaining fast switching: t_d(on) = 30 ns, t_r = 16 ns, t_d(off) = 46 ns, t_f = 17 ns, with Q_g = 110–145 nC and Q_gd = 25–45 nC at V_DD = 32 V.

It integrates a robust body diode with I_S = 100 A continuous forward current, V_SD = 0.85–1.3 V at I_F = 80 A and T_j = 25 °C, t_rr = 60 ns, and Q_rr = 95 nC - enabling efficient synchronous rectification and freewheeling in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/24 V automotive battery rail applications
R_DS(on)	2.5 mΩ (SMD version) - Enables <1 W conduction loss at 80 A, reducing heatsink size
I_D (continuous)	100 A at T_C = 100 °C - Supports high-current motor phases without derating in compact enclosures
E_AS	898 mJ - Withstands single-pulse inductive energy without failure in motor drive fault conditions
R_thJC	0.7 K/W - Allows direct thermal coupling to heatsink for stable operation under 214 W P_tot
Q_g	110–145 nC - Optimized gate charge enables efficient 100 kHz+ PWM switching with standard gate drivers
V_GS(th)	2.1–4.0 V - Ensures reliable turn-on with 5 V logic-level or 10 V gate drive across temperature

Pinout & Package

IPB100N04S303ATMA1 is housed in PG-TO263-3-2 (D²PAK) surface-mount package with isolated drain tab. The package supports high-current PCB mounting and direct heatsinking via the exposed drain pad.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (low-side reference)	Connected to ground or low-side node; carries full load current back to source
Pin 2 (Gate)	Control input	Receives PWM signal; requires <150 µA leakage current handling per datasheet spec
Pin 3 (Drain)	High-side power output	Exposed copper pad - electrically and thermally connected to drain; must be routed to high-voltage bus

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis systems per stress test requirements
100% unclamped inductive switching (UIS) tested	Guarantees robustness against voltage spikes during motor phase commutation
MSL1 rating up to 260 °C peak reflow	Enables compatibility with lead-free SMT assembly without popcorn or delamination risk
Green RoHS-compliant package	Halogen-free, lead-free construction meeting EU Directive 2011/65/EU Annex II
Optimized body diode recovery	t_rr = 60 ns and low Q_rr = 95 nC reduce switching losses in synchronous buck and half-bridge freewheeling

Applications

Automotive DC-DC Converters

Electric Power Steering (EPS) Inverters

Use Scenario: Step-down conversion from 48 V or 12 V battery to 5 V/3.3 V MCU rails in ADAS ECUs.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch in multiphase buck converter topology.

Use Value: 2.5 mΩ R_DS(on) minimizes conduction loss at 50–80 A load, improving efficiency >95% at full load.

Use Scenario: Three-phase inverter driving brushless DC motor in column-assist EPS systems.

IC Role / Device Role / Timing Role: Low-side power switch in 6-pack inverter module with 10–20 kHz PWM.

Use Value: 100 A continuous rating and 175 °C T_j allow sustained torque delivery during parking maneuvers without thermal shutdown.

On-Board Charger (OBC) Input Stage

48 V Mild Hybrid Starter-Generator Control

Use Scenario: Active rectification and power factor correction in bi-directional OBC AC/DC front-end.

IC Role / Device Role / Timing Role: Fast-switching MOSFET in totem-pole PFC bridge leg.

Use Value: Low C_iss (7400–9600 pF) and Crss (310–465 pF) enable clean zero-voltage switching transitions above 100 kHz.

Use Scenario: High-current bidirectional power switching between 48 V battery and starter-generator in belt-driven ISG systems.

IC Role / Device Role / Timing Role: Main power switch in H-bridge configuration for motoring/generation mode control.

Use Value: 898 mJ E_AS withstands regenerative energy surges during rapid deceleration without clamping circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP100N04S3-03	Same die, TO-220-3-1 through-hole package; R_DS(on) = 2.8 mΩ (max), R_thJC = 0.8 K/W	Better suited for prototyping or low-volume industrial SMPS where manual assembly is acceptable	Select when board space allows larger footprint and thermal path relies on clip-on heatsink rather than PCB copper
IPI100N04S3-03	Same die, TO-262-3-1 package; R_DS(on) = 2.8 mΩ (max), R_thJC = 0.75 K/W, MSL1 reflow compatible	Offers hybrid mounting: surface-mount leads with through-hole drain tab for mixed-technology boards	Choose for cost-sensitive automotive modules requiring reflow compatibility but needing mechanical stability beyond D²PAK

Compared with IPP100N04S3-03 and IPI100N04S3-03, IPB100N04S303ATMA1 delivers lowest R_DS(on) and best thermal resistance in fully SMT form factor, making it optimal for high-power density automotive inverters where PCB area and thermal management are constrained.

Availability

IPB100N04S303ATMA1 is available at Aetrix Electronics and suitable for automotive power conversion, electric power steering systems, and on-board charger designs requiring stable component supply across extended temperature and lifetime requirements.

Supply support for IPB100N04S303ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS®-T product line, engineered specifically for high-efficiency, high-reliability automotive power switching applications including 12 V/48 V systems and traction inverters.

FAQ

What is the maximum allowable gate-source voltage for IPB100N04S303ATMA1?

The absolute maximum V_GS is ±20 V. Operation beyond this range risks permanent gate oxide damage. Recommended gate drive is 10 V for full enhancement, with minimum 5 V ensuring turn-on across temperature and process variation per V_GS(th) = 2.1–4.0 V specification.

Does IPB100N04S303ATMA1 require external gate resistors in automotive motor drive applications?

Yes - a gate resistor (typically 3.3–10 Ω) is required to dampen ringing caused by gate loop inductance and limit peak gate current. The datasheet specifies t_d(on), t_r, t_d(off), and t_f measured with R_G = 3.3 Ω, confirming its use as a design reference for EMI and dv/dt control.

How is the 100% avalanche testing performed for this MOSFET?

Each unit undergoes unclamped inductive switching (UIS) stress at I_D = 80 A, V_DD = 32 V, and T_j = 25 °C until E_AS = 898 mJ is reached. Post-test electrical parameters (R_DS(on), V_BR(DSS), I_DSS) are verified within limits to confirm no parametric degradation occurred.

Can IPB100N04S303ATMA1 be used in parallel configurations for higher current capacity?

Yes - its positive temperature coefficient of R_DS(on) (2.5 → ~3.5 mΩ from 25 °C to 175 °C) ensures inherent current sharing. Layout symmetry, matched gate drive paths, and Kelvin source connections are required to maintain balance and avoid thermal runaway in multi-device paralleling.

IPB100N04S303ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.5mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 145 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 214W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB100N04S303ATMA1 FAQ

1.How can I place an order for IPB100N04S303ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB100N04S303ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB100N04S303ATMA1 reliable?

The price and inventory of IPB100N04S303ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB100N04S303ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB100N04S303ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB100N04S303ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB100N04S303ATMA1?

IPB100N04S303ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB100N04S303ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB100N04S303ATMA1?

For technical support, including IPB100N04S303ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB100N04S303ATMA1 requirements.

6.How does Aetrix verify that IPB100N04S303ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB100N04S303ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB100N04S303ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB100N04S303ATMA1?

All IPB100N04S303ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB100N04S303ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB100N04S303ATMA1 part is unused and in its original packaging.

Return procedure for IPB100N04S303ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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