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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB100N06S205ATMA1

Name: IPB100N06S205ATMA1
Brand: Infineon Technologies
SKU: IPB100N06S205ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB100N06S205ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB100N06S205ATMA1.pdf

Description:: MOSFET N-CH 55V 100A TO263-3

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Product details

Overview

IPB100N06S205ATMA1 from Infineon Technologies is an N-channel enhancement-mode automotive-grade power MOSFET in PG-TO263-3-2 package, rated for 55 V V_DS, 4.7 mΩ max R_DS(on) at 100 A/10 V, and 175 °C operation. It delivers ultra-low conduction loss with 100% avalanche energy rating (810 mJ), and is AEC-Q101 qualified for engine control, DC-DC converters, and high-current motor drives.

For engineers reviewing the IPB100N06S205ATMA1 datasheet, IPB100N06S205ATMA1 pinout, IPB100N06S205ATMA1 application, or IPB100N06S205ATMA1 equivalent, key selection criteria include R_DS(on) stability over temperature, pulsed current capability (400 A), thermal resistance (0.5 K/W junction-to-case), and integrated body diode performance (t_rr = 60–75 ns).

Technical Context

This OptiMOS® device uses trench-gate superjunction technology to achieve low R_DS(on) × Q_g figure-of-merit (170 nC total gate charge) while maintaining fast switching (t_r = 31 ns, t_f = 30 ns). Its gate threshold voltage (2.1–4.0 V) ensures robust noise immunity in 12 V automotive systems.

The integrated Schottky-like body diode supports synchronous rectification with low V_SD (0.6–1.3 V at 80 A) and controlled reverse recovery (Q_rr = 130–160 nC), minimizing commutation losses in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage compatible with 48 V nominal battery systems and transient clamping up to ISO 7637-2 Pulse 5a.
R_DS(on) max	4.7 mΩ @ T_j = 25 °C, I_D = 80 A, V_GS = 10 V - Enables <1 W conduction loss at 100 A, reducing heatsink requirements.
I_D continuous	100 A @ T_C = 25 °C - Sustained high-current capability supported by MSL1 reflow compatibility and 0.5 K/W R_thJC.
E_AS	810 mJ - Single-pulse avalanche energy rating confirms ruggedness under inductive turn-off stress without external snubbers.
t_rr	60–75 ns - Fast, soft reverse recovery minimizes voltage overshoot and EMI in buck and half-bridge configurations.
Q_g	130–170 nC - Gate drive energy requirement informs selection of gate driver ICs (e.g., 1–2 A peak sourcing/sinking).
T_j max	175 °C - Extended junction temperature enables operation in under-hood environments without derating at full current.

Pinout & Package

IPB100N06S205ATMA1 is housed in a surface-mount PG-TO263-3-2 (D²PAK) package with isolated drain tab for PCB thermal management. The three terminals are arranged in standard TO263 layout: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives 10 V logic-level drive; threshold range (2.1–4.0 V) allows compatibility with 3.3 V and 5 V microcontrollers via level-shifting.
Pin 2 (Drain)	High-side power terminal	Exposed copper tab - must be soldered to ≥6 cm² PCB copper area for R_thJA = 40 K/W; electrically connected to drain internal structure.
Pin 3 (Source)	Reference and return path	Low-inductance source connection critical for minimizing switching oscillation; ties directly to power ground plane.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis applications per stress test requirements including HTGB, HTRB, and temperature cycling.
100% avalanche tested	Each unit undergoes single-pulse avalanche stress at rated I_D and V_DS, ensuring field reliability in inductive load switching.
Ultra-low R_DS(on) × Q_g	Typical 4.0 mΩ R_DS(on) with 130 nC Q_g yields 520 mΩ·nC FoM - reduces combined conduction and switching losses in 100–500 kHz SMPS.
Green package	Lead-free, halogen-free PG-TO263-3-2 meets RoHS Directive 2011/65/EU and JEDEC J-STD-020D MSL1 rating (260 °C peak reflow).
Integrated body diode	Optimized for low Q_rr (130–160 nC) and soft recovery - enables efficient freewheeling in synchronous rectifiers without external diodes.

Applications

Engine Control Unit (ECU) High-Side Switch

48 V Automotive DC-DC Converter

Use Scenario: Driving solenoid valves and fuel injectors in gasoline/diesel ECUs with PWM duty cycles up to 95%.

IC Role / Device Role / Timing Role: High-side power switch controlling 12–48 V loads; operates in linear and saturated modes during current ramp-up and hold phases.

Use Value: Low R_DS(on) (4.7 mΩ) limits power dissipation to <0.5 W at 10 A, eliminating need for active cooling in compact ECU modules.

Use Scenario: Primary-side synchronous rectifier in 48 V–12 V bidirectional buck-boost converter for mild hybrid vehicles.

IC Role / Device Role / Timing Role: Low-side switching element in synchronous rectification stage; commutates at 200–300 kHz with precise dead-time control.

Use Value: Fast t_rr (60 ns) and low Q_rr reduce cross-conduction losses by >35% versus standard MOSFETs, improving efficiency from 92% to 94.5% at 5 kW.

Electric Power Steering (EPS) Motor Driver

On-Board Charger (OBC) Input Stage

Use Scenario: Half-bridge leg in 3-phase inverter driving 1–3 kW brushless EPS motors with regenerative braking.

IC Role / Device Role / Timing Role: Phase-leg switch handling 100 A peak phase current; subjected to repetitive avalanche during brake energy recapture.

Use Value: 810 mJ E_AS rating ensures reliable operation under 150 V bus transients without failure, extending system lifetime beyond 15,000 hours.

Use Scenario: AC-DC PFC boost switch in 6.6 kW OBC front-end operating at 65 kHz with 400 V DC link.

IC Role / Device Role / Timing Role: High-efficiency, high-reliability switching device in continuous conduction mode (CCM) PFC stage.

Use Value: 175 °C T_j max and 0.5 K/W R_thJC allow full 100 A rating at ambient up to 105 °C, enabling smaller heatsinks and higher power density.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP100N06S205ATMA1	Same die, PG-TO220-3-1 package; R_thJA = 62 K/W (leaded); no exposed drain tab.	Suitable for lower-power prototyping or non-automotive industrial use where PCB space and thermal mass are less constrained.	Select when through-hole assembly is required or when thermal interface to heatsink is via mechanical clamp rather than soldered copper area.
IPB120N04S402ATMA1	40 V V_DS, 2.0 mΩ R_DS(on), same PG-TO263-3-2; optimized for 12 V/48 V systems with tighter R_DS(on) tolerance.	Better suited for high-frequency, low-voltage DC-DC stages where 55 V rating is excessive and lower R_DS(on) improves light-load efficiency.	Choose for 48 V battery systems requiring <2.5 mΩ on-resistance and reduced gate charge (110 nC), accepting lower V_DS margin.

Compared with IPP100N06S205ATMA1, the TO220 variant trades thermal performance for assembly flexibility; compared with IPB120N04S402ATMA1, the 55 V rating provides greater transient headroom in 48 V systems but with higher conduction loss at identical current levels.

Availability

IPB100N06S205ATMA1 is available at Aetrix Electronics and suitable for automotive powertrain control, 48 V DC-DC conversion, and electric power steering requiring stable component supply across multi-year production programs.

Supply support for IPB100N06S205ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS® 2nd generation power transistor product line, engineered specifically for high-current, high-temperature automotive applications demanding AEC-Q101 compliance and robust avalanche performance.

FAQ

What is the maximum allowable gate-source voltage for IPB100N06S205ATMA1?

The absolute maximum gate-source voltage is ±20 V, qualified at both −20 V and +20 V per datasheet Rev. 1.0. Operation above +15 V or below −10 V risks permanent gate oxide damage. Recommended drive is 10 V for full R_DS(on) optimization with margin against Miller-induced turn-on.

Does IPB100N06S205ATMA1 require a gate resistor for safe switching?

Yes - a gate resistor (typically 2.2 Ω, as used in characterization) is required to control dV/dt and prevent parasitic oscillation. Without it, ringing during turn-on/turn-off can exceed V_GS rating or cause shoot-through in bridge configurations. Layout-dependent stray inductance also influences optimal value.

Can IPB100N06S205ATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (increases with T_j) enables inherent current sharing. Successful paralleling requires matched gate drive paths, symmetrical PCB layout, and thermal coupling via shared heatsink or copper pour to minimize dynamic imbalance during switching transitions.

Is the drain tab electrically isolated in the PG-TO263-3-2 package?

No - the exposed drain tab is internally connected to the MOSFET's drain terminal and must be treated as a live high-voltage node. It must be soldered to a dedicated, insulated copper area on the PCB; isolation from other layers is achieved via solder mask clearance and minimum creepage/clearance distances per IPC-2221.

IPB100N06S205ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.7mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 170 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5110 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB100N06S205ATMA1 FAQ

1.How can I place an order for IPB100N06S205ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB100N06S205ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB100N06S205ATMA1 reliable?

The price and inventory of IPB100N06S205ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB100N06S205ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB100N06S205ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB100N06S205ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB100N06S205ATMA1?

IPB100N06S205ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB100N06S205ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB100N06S205ATMA1?

For technical support, including IPB100N06S205ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB100N06S205ATMA1 requirements.

6.How does Aetrix verify that IPB100N06S205ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB100N06S205ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB100N06S205ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB100N06S205ATMA1?

All IPB100N06S205ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB100N06S205ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB100N06S205ATMA1 part is unused and in its original packaging.

Return procedure for IPB100N06S205ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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