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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB100N06S205ATMA4

Name: IPB100N06S205ATMA4
Brand: Infineon Technologies
SKU: IPB100N06S205ATMA4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB100N06S205ATMA4

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB100N06S205ATMA4.pdf

Description:: MOSFET N-CH 55V 100A TO263-3

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Product details

Overview

IPB100N06S205ATMA4 from Infineon Technologies is an N-channel enhancement-mode automotive-grade power MOSFET in PG-TO263-3-2 package, rated for 55 V V_DS, 4.7 mΩ max R_DS(on) at 100 A/10 V, and 175 °C operation. It is AEC-Q101 qualified, 100% avalanche tested, and optimized for high-current DC-DC converters and motor control in engine management systems.

For engineers reviewing the IPB100N06S205ATMA4 datasheet, IPB100N06S205ATMA4 pinout, IPB100N06S205ATMA4 application, or IPB100N06S205ATMA4 equivalent, key selection criteria include its ultra-low on-resistance, robust thermal resistance (R_thJC = 0.5 K/W), integrated body diode with 60 ns t_rr, and SMD-compatible TO263 footprint for high-power automotive PCB layouts.

Technical Context

This OptiMOS® device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance. Its gate threshold voltage (2.1–4.0 V) enables reliable turn-on with standard 5 V or 10 V logic-level drivers, and its 130–170 nC total gate charge supports efficient PWM operation up to several hundred kHz.

The integrated body diode exhibits 0.6–1.3 V forward voltage at 80 A and 25 °C, with reverse recovery charge Q_rr of 130–160 nC and t_rr of 60–75 ns under defined dI/dt conditions - critical for minimizing commutation losses in synchronous rectification and H-bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - maximum blocking voltage compatible with 48 V automotive battery systems and 24 V industrial rails
R_DS(on) max	4.7 mΩ at V_GS = 10 V, I_D = 80 A - enables <1 W conduction loss at 100 A, reducing heatsink requirements
I_D continuous	100 A at T_C = 25 °C - supported by robust bondwire and die construction, limited by package thermal path
E_AS	810 mJ single-pulse avalanche energy - ensures ruggedness against inductive switching transients in motor drives
t_r/t_f	31 ns / 30 ns - enables clean edge transitions in high-frequency SMPS designs with minimal switching loss trade-off
Q_g	130–170 nC - determines gate driver current demand; requires ≥1.5 A peak drive for 100 ns transition times
T_j max	175 °C - allows operation in under-hood environments without derating below full current capability

Pinout & Package

IPB100N06S205ATMA4 is housed in a surface-mount PG-TO263-3-2 (D²PAK) package with exposed drain pad for enhanced thermal dissipation. The package meets MSL1 reflow rating (260 °C peak) and is lead-free compliant.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground or low-side switch node; carries full load current
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET gate; requires low-inductance routing and proper gate resistor to damp ringing
Pin 3 (Drain)	Power output (D)	Exposed copper pad - primary thermal path to PCB; must be soldered to ≥6 cm² copper area for R_thJA = 40 K/W

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis applications including engine control units and EPS modules
Ultra-low R_DS(on)	4.7 mΩ max enables >97% efficiency in 48 V/100 A buck converters at 100 kHz
100% avalanche tested	Guarantees single-pulse ruggedness up to 810 mJ - eliminates need for external snubbers in inductive loads
Integrated body diode	60–75 ns t_rr and 130–160 nC Q_rr support synchronous rectification without external Schottky replacement
Thermal resistance R_thJC	0.5 K/W - allows direct junction-to-heatsink thermal path when mounted on metal-core PCB or heatsink

Applications

Engine Control Unit (ECU) Fuel Injector Driver

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-speed switching of solenoid fuel injectors in gasoline direct injection systems.

IC Role / Device Role / Timing Role: Low-side power switch controlling 12–24 V, 10–15 A injector pulses with <100 µs on-time.

Use Value: 4.7 mΩ R_DS(on) minimizes coil heating during dwell time; 175 °C rating ensures reliability near hot engine blocks.

Use Scenario: Primary-side synchronous rectifier in bidirectional 48 V–12 V DC-DC converter for mild hybrid vehicles.

IC Role / Device Role / Timing Role: High-current, high-frequency power switch operating at 200–300 kHz with 100 A peak current.

Use Value: Low Q_g and fast t_r/t_f reduce switching loss; integrated diode enables zero-voltage switching (ZVS) capability.

Electric Power Steering (EPS) Motor Phase Leg

Industrial BLDC Motor Inverter

Use Scenario: Half-bridge phase leg in 24 V EPS motor drive handling 80 A peak currents during steering assist.

IC Role / Device Role / Timing Role: High-side and low-side switching element in three-phase inverter with PWM carrier frequency ≥10 kHz.

Use Value: 810 mJ E_AS withstands motor back-EMF spikes during sudden deceleration; MSL1 reflow compatibility supports automated assembly.

Use Scenario: 3-phase inverter stage for 3 kW industrial BLDC motors in HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Power switch in TO263-based inverter module delivering continuous 100 A per phase at 10 kHz PWM.

Use Value: R_thJC = 0.5 K/W enables compact heatsink design; green package complies with RoHS and ELV directives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP100N06S205ATMA1	Same die, but in through-hole PG-TO220-3-1 package; R_thJC = 0.5 K/W, R_thJA = 62 K/W (leaded)	Preferred for prototyping, lower-volume industrial controls where manual assembly or heatsink mounting is used	Select when mechanical mounting flexibility or legacy TO220 heatsink compatibility outweighs SMD layout density benefits
IPB120N04S402ATMA1	40 V V_DS, 2.0 mΩ R_DS(on), same PG-TO263-3-2 package; higher current density but lower voltage rating	Suitable only for ≤40 V systems (e.g., 24 V EPS, server VRMs); not interchangeable in 48 V or engine-bay applications	Choose only if system bus voltage is strictly ≤40 V and sub-2 mΩ conduction loss is prioritized over voltage margin

Compared with IPP100N06S205ATMA1, IPB100N06S205ATMA4 offers superior board-level thermal performance via PCB copper area; versus IPB120N04S402ATMA1, it trades lower R_DS(on) for essential 55 V blocking headroom in automotive transients.

Availability

IPB100N06S205ATMA4 is available at Aetrix Electronics and suitable for engine control units, 48 V mild hybrid converters, electric power steering inverters, and industrial BLDC motor drives requiring stable component supply across automotive production lifecycles.

Supply support for IPB100N06S205ATMA4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS® 2nd generation power transistor product line, engineered specifically for high-efficiency, high-reliability switching in automotive powertrain and industrial motor control applications.

FAQ

What is the maximum allowable gate-source voltage for IPB100N06S205ATMA4?

The absolute maximum gate-source voltage is ±20 V, qualified at both -20 V and +20 V per datasheet Rev. 1.0. Operating above ±15 V risks permanent gate oxide damage; typical drive uses 10 V for full enhancement and 0 V or -5 V for guaranteed turn-off in noisy environments.

Does IPB100N06S205ATMA4 require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt and prevent oscillation. For 100 A switching at 200 kHz, a 2.2 Ω series resistor is validated in Infineon's ANPS071E; values between 1.5 Ω and 4.7 Ω balance switching speed against EMI and gate driver stress.

Can IPB100N06S205ATMA4 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (increasing ~0.5%/°C) enables inherent current sharing. Layout symmetry, matched gate drive paths, and individual source resistors are mandatory; parallel operation beyond two devices requires thermal derating per Infineon Application Note AN2015-05.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes - the integrated diode is rated for 100 A continuous forward current and 400 A pulsed current. Its 60–75 ns t_rr and soft recovery behavior minimize voltage overshoot, making it viable for synchronous rectification in 100–300 kHz DC-DC converters without external diodes.

IPB100N06S205ATMA4 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.7mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 170 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5110 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB100N06S205ATMA4 FAQ

1.How can I place an order for IPB100N06S205ATMA4 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB100N06S205ATMA4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB100N06S205ATMA4 reliable?

The price and inventory of IPB100N06S205ATMA4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB100N06S205ATMA4 is usually 5 days.

3.What payment methods are accepted for IPB100N06S205ATMA4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB100N06S205ATMA4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB100N06S205ATMA4?

IPB100N06S205ATMA4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB100N06S205ATMA4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB100N06S205ATMA4?

For technical support, including IPB100N06S205ATMA4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB100N06S205ATMA4 requirements.

6.How does Aetrix verify that IPB100N06S205ATMA4 is sourced from the original manufacturer or authorized distributors?

All IPB100N06S205ATMA4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB100N06S205ATMA4 meets industry standards.

7.What is the process for return or replacement of IPB100N06S205ATMA4?

All IPB100N06S205ATMA4 units undergo pre-shipment inspection (PSI). If there is an issue with IPB100N06S205ATMA4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB100N06S205ATMA4 part is unused and in its original packaging.

Return procedure for IPB100N06S205ATMA4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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