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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB100N06S2L05ATMA1

Name: IPB100N06S2L05ATMA1
Brand: Infineon Technologies
SKU: IPB100N06S2L05ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB100N06S2L05ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB100N06S2L05ATMA1.pdf

Description:: MOSFET N-CH 55V 100A TO263-3

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Product details

Overview

IPB100N06S2L05ATMA1 from Infineon Technologies is an N-channel logic-level OptiMOS™ power MOSFET in PG-TO263-3-2 (D²PAK) package, rated for 55 V V_DS, 4.4 mΩ max R_DS(on) at V_GS = 10 V and I_D = 80 A, 100 A continuous drain current at T_C = 25 °C, and AEC-Q101 qualified for automotive use. It delivers ultra-low conduction loss in high-current DC-DC converters and motor control stages.

For engineers reviewing the IPB100N06S2L05ATMA1 datasheet, IPB100N06S2L05ATMA1 pinout, IPB100N06S2L05ATMA1 application, or IPB100N06S2L05ATMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, avalanche energy rating (810 mJ), thermal resistance (R_thJC = 0.5 K/W), and AEC-Q101 qualification status for under-hood automotive deployment.

Technical Context

This MOSFET employs trench-based silicon technology optimized for low R_DS(on) and fast switching with Q_g = 170–230 nC and Q_gd = 57–90 nC. Its logic-level gate threshold (V_GS(th) = 1.2–2.0 V) enables direct drive from 3.3 V/5 V microcontrollers without level-shifting.

The device integrates a robust body diode with t_rr = 65–80 ns and Q_rr = 125–160 nC, supporting synchronous rectification and freewheeling in half-bridge topologies. Thermal design is enabled by its 0.5 K/W junction-to-case resistance and 175 °C maximum operating temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage for 12 V/24 V automotive bus systems
R_DS(on) max @ V_GS = 10 V	4.4 mΩ - Enables ≤ 44 W conduction loss at 100 A (I²R)
I_D continuous @ T_C = 25 °C	100 A - Sustained output current capability with adequate heatsinking
E_AS	810 mJ - Single-pulse avalanche energy supports inductive load switching reliability
R_thJC	0.5 K/W - Enables efficient heat transfer to heatsink in surface-mount layout
Q_g	170–230 nC - Gate charge defining drive strength requirement for <100 ns switching
t_r/t_f	25 ns / 24 ns - Fast edge rates suitable for 100–500 kHz SMPS operation

Pinout & Package

IPB100N06S2L05ATMA1 uses the PG-TO263-3-2 (D²PAK) thermally enhanced surface-mount package with isolated drain tab. The three terminals are arranged in standard D²PAK footprint: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Logic-level compatible; drives full conduction with ≥4.5 V; requires <230 nC charge
Pin 2 (Drain)	High-side switch node	Exposed copper tab - primary thermal path to PCB heatsink; electrically connected to drain
Pin 3 (Source)	Reference return	Low-inductance source connection; ties to power ground plane in high-di/dt layouts

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive under-hood applications including engine control and ADAS power stages
Ultra-low R_DS(on)	4.4 mΩ max at 10 V drive enables >97% efficiency in 48 V BLDC motor inverters at 80 A
100% avalanche tested	Guarantees ruggedness against inductive kickback in relay drivers and solenoid controls
MSL1 rating	Compatible with standard 260 °C peak reflow profiles without moisture sensitivity concerns
175 °C operating limit	Supports extended thermal margin in sealed enclosures with limited airflow

Applications

Automotive Engine Control Unit (ECU)

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-side switch for fuel injector driver in gasoline direct injection systems.

IC Role / Device Role / Timing Role: Power switch controlling 12 V solenoid actuation with precise 1–5 ms pulse width.

Use Value: Low R_DS(on) minimizes self-heating during repetitive pulsing; avalanche rating absorbs inductive flyback without snubber.

Use Scenario: Primary-side synchronous rectifier in bidirectional 48 V–12 V buck-boost converter.

IC Role / Device Role / Timing Role: Low-side switch in synchronous rectification stage, operating at 200 kHz PWM frequency.

Use Value: 4.4 mΩ R_DS(on) reduces conduction loss below 350 mW at 80 A; fast t_r/t_f limits switching loss.

Electric Power Steering (EPS) Inverter

Industrial Motor Drive Half-Bridge

Use Scenario: Phase-leg switch in 3-phase inverter supplying brushless DC motor in EPS rack assembly.

IC Role / Device Role / Timing Role: High-current, high-reliability power switch handling 100 A peak phase current.

Use Value: 175 °C rating ensures stable operation near gearbox heat sources; 0.5 K/W R_thJC enables compact heatsink integration.

Use Scenario: Half-bridge leg in 3 kW servo drive for CNC axis control.

IC Role / Device Role / Timing Role: Low-side switch in hard-switched topology with active gate driving and desaturation protection.

Use Value: 810 mJ E_AS withstands short-circuit events up to 10 µs; body diode Q_rr < 160 nC reduces reverse recovery loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP100N06S2L-05	Same die, TO-220-3-1 package; R_thJC = 0.5 K/W identical but higher R_thJA (62 K/W vs 40 K/W on PCB)	Preferred for prototyping or through-hole assembly; less suited for high-power density SMT designs	Select when manual soldering or legacy board compatibility required
IPB120N06S2H05ATMA1	Higher R_DS(on) (5.0 mΩ), same V_DS/I_D, improved Q_gd/Q_g ratio for lower Miller-induced shoot-through risk	Better suited for high-frequency (>300 kHz) ZVS/ZCS resonant converters where switching loss dominates	Select when optimizing for EMI-sensitive or zero-voltage-switching topologies

Compared with IPP100N06S2L-05, IPB100N06S2L05ATMA1 offers superior thermal performance in SMT layouts; versus IPB120N06S2H05ATMA1, it prioritizes conduction efficiency over switching linearity-making it optimal for high-current, medium-frequency automotive power stages.

Availability

IPB100N06S2L05ATMA1 is available at Aetrix Electronics and suitable for automotive engine control units, 48 V mild hybrid converters, electric power steering inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for IPB100N06S2L05ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS™ 2nd generation power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in automotive and industrial power conversion systems.

FAQ

Is IPB100N06S2L05ATMA1 suitable for 48 V battery system applications?

Yes. With 55 V V_DS, 100 A continuous current, and 4.4 mΩ R_DS(on), it supports 48 V nominal systems including start-stop, mild hybrid DC-DC, and EPS inverters. Its 175 °C rating and AEC-Q101 qualification ensure robustness under transient overvoltage and thermal stress typical in vehicle electrical architectures.

What is the recommended gate resistor value for switching at 200 kHz?

A 1.3 Ω gate resistor is validated in Infineon's characterization (Rev. 1.0, p.3) for V_DD = 44 V, I_D = 100 A, and V_GS = 0–10 V drive. At 200 kHz, this provides balanced turn-on/turn-off times (~18 ns t_d(on), ~98 ns t_d(off)) while limiting ringing and EMI without excessive drive loss.

Does the device include an integrated body diode, and what are its recovery characteristics?

Yes, it features a monolithic body diode with forward voltage V_SD = 0.9–1.3 V at I_F = 80 A and T_j = 25 °C. Reverse recovery time t_rr is 65–80 ns, and Q_rr is 125–160 nC under V_R = 30 V, I_F = I_S, and di_F/dt = 100 A/µs - enabling use in synchronous rectification without external Schottky supplementation.

How does the MSL1 rating impact PCB assembly process planning?

MSL1 classification means the device is not moisture-sensitive and can be stored indefinitely at ambient conditions without dry-pack requirements. It withstands standard lead-free reflow profiles up to 260 °C peak temperature, eliminating bake-out steps and enabling direct placement into high-volume SMT lines using standard D²PAK stencil and reflow profiles.

IPB100N06S2L05ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.4mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 230 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5660 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB100N06S2L05ATMA1 FAQ

1.How can I place an order for IPB100N06S2L05ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB100N06S2L05ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB100N06S2L05ATMA1 reliable?

The price and inventory of IPB100N06S2L05ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB100N06S2L05ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB100N06S2L05ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB100N06S2L05ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB100N06S2L05ATMA1?

IPB100N06S2L05ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB100N06S2L05ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB100N06S2L05ATMA1?

For technical support, including IPB100N06S2L05ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB100N06S2L05ATMA1 requirements.

6.How does Aetrix verify that IPB100N06S2L05ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB100N06S2L05ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB100N06S2L05ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB100N06S2L05ATMA1?

All IPB100N06S2L05ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB100N06S2L05ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB100N06S2L05ATMA1 part is unused and in its original packaging.

Return procedure for IPB100N06S2L05ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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