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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB100N06S3-03

Name: IPB100N06S3-03
Brand: Infineon Technologies
SKU: IPB100N06S3-03
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB100N06S3-03

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB100N06S3-03.pdf

Description:: MOSFET N-CH 55V 100A TO263-3

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Product details

Overview

IPB100N06S3-03 from Infineon Technologies is an N-channel enhancement-mode automotive-grade MOSFET with 55 V V_DS, 3.0 mΩ max R_DS(on) at 10 V V_GS, 100 A continuous drain current (T_C = 25 °C), and AEC-Q101 qualification. It operates up to 175 °C, features 100% single-pulse avalanche testing (E_AS = 2390 mJ), and is packaged in PG-TO263-3-2 for high-power motor control and DC-DC conversion.

For engineers reviewing the IPB100N06S3-03 datasheet, IPB100N06S3-03 pinout, IPB100N06S3-03 application, or IPB100N06S3-03 equivalent, key selection criteria include R_DS(on) stability over temperature, avalanche ruggedness, thermal resistance (R_thJC = 0.5 K/W), gate charge profile (Q_g = 320–480 nC), and automotive reliability compliance.

Technical Context

This OptiMOS™-T2 power transistor uses trench-gate technology optimized for low conduction and switching losses in high-current 12 V/24 V automotive systems. Its 2.5–3.3 mΩ typical R_DS(on) at 80 A enables efficient operation in battery disconnect, starter motor drivers, and BLDC inverter half-bridges.

The device integrates a robust body diode with 140 ns reverse recovery time and 205 nC Q_rr, supporting synchronous rectification and freewheeling in hard-switched topologies. Gate plateau voltage of 5.6 V ensures stable Miller region control during fast transitions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage compatible with 48 V nominal automotive systems and transient clamping up to ISO 7637-2 Pulse 5a.
R_DS(on) max	3.0 mΩ @ V_GS = 10 V - Enables ≤3 W conduction loss at 80 A, reducing heatsink requirements in compact modules.
I_D cont.	100 A @ T_C = 25 °C - Sustains peak load currents in engine control units and electric power steering without derating.
E_AS	2390 mJ @ I_D = 50 A - Withstands inductive turn-off energy in solenoid drivers and motor phase legs without failure.
Q_g	320–480 nC - Determines gate driver power requirement; supports 10–20 V drive with <1 W average gate loss at 20 kHz.
R_thJC	0.5 K/W - Allows direct thermal coupling to heatsink; enables 223 A theoretical chip current at 25 °C case temperature.
t_r/t_f	67 ns / 60 ns @ R_G = 1.3 Ω - Supports >100 kHz switching in high-efficiency DC-DC converters with controlled EMI.

Pinout & Package

IPB100N06S3-03 is housed in PG-TO263-3-2 (D²PAK) package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard D²PAK layout: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives 10 V logic-level drive; requires <1.3 Ω series resistance to damp ringing due to 3140 pF Crss.
Pin 2 (Drain)	High-side power node	Exposed copper tab - must be soldered to PCB copper pour ≥6 cm² for R_thJA = 40 K/W performance.
Pin 3 (Source)	Reference return path	Low-inductance connection to power ground; critical for accurate current sensing and gate loop stability.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive underhood applications including temperature cycling, humidity bias, and mechanical shock per JESD22-A108.
100% avalanche tested	Each unit passes single-pulse E_AS stress test at 50 A, ensuring field reliability in inductive load switching.
MSL1 rating	Compatible with lead-free reflow up to 260 °C peak, eliminating moisture sensitivity concerns during SMT assembly.
OptiMOS™-T2 trench process	Delivers 15% lower R_DS(on) × Q_g figure-of-merit vs. prior generation, improving efficiency in 10–100 kHz motor drives.
Green product (RoHS)	Lead-free terminations and halogen-free molding compound meet EU Directive 2011/65/EU and IPC-1752A Class 1.

Applications

Automotive Starter Motor Driver

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-current bidirectional control of 12 V starter motor via H-bridge using parallel MOSFETs.

IC Role / Device Role / Timing Role: Low-side switch handling 100 A pulsed current with <60 ns fall time to minimize commutation loss.

Use Value: 3.0 mΩ R_DS(on) limits conduction loss to 30 W at 100 A, enabling air-cooled design in space-constrained engine bays.

Use Scenario: Primary-side synchronous rectifier in 3.3 kW isolated LLC resonant converter stepping 48 V down to 12 V.

IC Role / Device Role / Timing Role: High-frequency (200–300 kHz) power switch with low Q_gd/Q_gs ratio for ZVS transition support.

Use Value: 70 nC Q_gd and 130 nC Q_gs enable clean turn-on with minimal Miller-induced shoot-through risk.

Electric Power Steering (EPS) Inverter

Battery Disconnect Switch (BMS)

Use Scenario: Three-phase inverter driving 300 W BLDC motor in column-assist EPS module.

IC Role / Device Role / Timing Role: Half-bridge high-side and low-side switch operating at 10–20 kHz PWM with 175 °C junction rating.

Use Value: 175 °C max T_j and 0.5 K/W R_thJC allow sustained 85 A RMS current in sealed enclosure without active cooling.

Use Scenario: Solid-state main contactor replacement in 48 V commercial vehicle battery management system.

IC Role / Device Role / Timing Role: Normally-open isolation switch activated during fault conditions or maintenance mode.

Use Value: 2390 mJ E_AS withstands full-battery short-circuit energy (e.g., 48 V × 100 A × 500 µs), preventing catastrophic failure during fault clearing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP100N06S3-03	Same die, PG-TO220-3-1 package; higher R_thJA (62 K/W), no exposed drain pad.	Suitable for lower-power, through-hole mounted designs where PCB area is available for heatsinking.	Select when manual assembly, cost sensitivity, or legacy TO-220 footprint compatibility outweigh thermal performance needs.
IPI100N06S3-03	Same die, PG-TO262-3-1 package; R_thJC = 0.5 K/W but requires mounting screw; no SMD reflow capability.	Used in industrial motor drives where mechanical mounting stability and vibration resistance are prioritized.	Choose for high-vibration environments (e.g., off-highway equipment) where D²PAK solder joint reliability is a concern.

Compared with IPP100N06S3-03 and IPI100N06S3-03, IPB100N06S3-03 delivers superior thermal performance in surface-mount layouts due to its D²PAK's low-inductance drain pad and optimized PCB copper coupling-critical for automotive ECU miniaturization and high-reliability power stages.

Availability

IPB100N06S3-03 is available at Aetrix Electronics and suitable for automotive powertrain control, 48 V mild hybrid systems, and battery management applications requiring stable component supply across extended production lifecycles.

Supply support for IPB100N06S3-03 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D centers focused on energy-efficient solutions.

This device belongs to the OptiMOS™-T2 power MOSFET product line, engineered specifically for high-current, high-temperature automotive power switching with emphasis on avalanche ruggedness and AEC-Q101 compliance.

FAQ

What is the maximum allowable gate-source voltage for IPB100N06S3-03?

The absolute maximum gate-source voltage is ±20 V, with qualification performed at −5 V and +20 V per datasheet Rev. 1.1. Operation beyond ±20 V risks permanent gate oxide damage. Recommended drive is 10 V for full enhancement, with 5.6 V gate plateau voltage confirming stable Miller region behavior during switching.

Does IPB100N06S3-03 support synchronous rectification in buck converters?

Yes-it supports synchronous rectification with its low 0.6–1.3 V body diode forward voltage (V_SD) at 80 A and 140 ns reverse recovery time. When paired with complementary high-side control, it reduces conduction loss by >40% versus Schottky solutions in 12–48 V output stages operating up to 500 kHz.

How does the 175 °C operating temperature affect PCB layout?

The 175 °C rating allows operation in high-ambient zones (e.g., near engines), but PCB layout must ensure R_thJA ≤ 40 K/W via ≥6 cm² copper area on inner or outer layers connected to the drain tab. Thermal vias (≥12×0.3 mm) under the tab and 70 µm copper thickness are required to maintain junction temperature below limit at 100 A.

Is IPB100N06S3-03 pin-compatible with other OptiMOS™-T2 100 A devices?

No-while IPB100N06S3-03 (PG-TO263-3-2), IPI100N06S3-03 (PG-TO262-3-1), and IPP100N06S3-03 (PG-TO220-3-1) share identical silicon die and electrical specs, their packages differ mechanically and thermally. Mounting holes, pad layouts, and thermal interface methods are not interchangeable without board redesign.

IPB100N06S3-03 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 230µA

Gate Charge (Qg) (Max) @ Vgs:: 480 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 21620 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB100N06S3-03 FAQ

1.How can I place an order for IPB100N06S3-03 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB100N06S3-03 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB100N06S3-03 reliable?

The price and inventory of IPB100N06S3-03 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB100N06S3-03 is usually 5 days.

3.What payment methods are accepted for IPB100N06S3-03?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB100N06S3-03 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB100N06S3-03?

IPB100N06S3-03 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB100N06S3-03 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB100N06S3-03?

For technical support, including IPB100N06S3-03 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB100N06S3-03 requirements.

6.How does Aetrix verify that IPB100N06S3-03 is sourced from the original manufacturer or authorized distributors?

All IPB100N06S3-03 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB100N06S3-03 meets industry standards.

7.What is the process for return or replacement of IPB100N06S3-03?

All IPB100N06S3-03 units undergo pre-shipment inspection (PSI). If there is an issue with IPB100N06S3-03, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB100N06S3-03 part is unused and in its original packaging.

Return procedure for IPB100N06S3-03:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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