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Infineon Technologies IPB100N06S3-04

Part No.:
IPB100N06S3-04
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIPB100N06S3-04.pdf
Description:
MOSFET N-CH 55V 100A TO263-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,353

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Product details

Overview

IPB100N06S3-04 from Infineon Technologies is an N-channel enhancement-mode automotive-grade MOSFET in PG-TO263-3-2 package, rated for 55 V VDS, 4.1 mΩ max RDS(on) at 10 V VGS, and 100 A continuous drain current at TC = 25 °C. It is AEC-Q101 qualified, 100% avalanche tested, and supports high-current motor control and DC-DC conversion in engine management systems.

For engineers reviewing the IPB100N06S3-04 datasheet, IPB100N06S3-04 pinout, IPB100N06S3-04 application, or IPB100N06S3-04 equivalent, key selection criteria include its 0.7 K/W junction-to-case thermal resistance, 209–314 nC total gate charge, 1090 mJ single-pulse avalanche energy, and SMD-compatible TO263 footprint for high-power automotive PCB layouts.

Technical Context

This OptiMOS®-T2 device uses trench-gate superjunction technology to achieve low RDS(on) × Qg figure-of-merit (≈1.8 mΩ·nC), enabling high-efficiency switching in 12 V/24 V automotive power stages. Its gate threshold voltage range (2.1–4.0 V) ensures robust noise immunity while supporting standard 5 V and 10 V gate drivers.

The integrated body diode exhibits 0.6–1.3 V forward voltage at 80 A and 95 ns reverse recovery time, making it suitable for synchronous rectification and freewheeling in buck converters and H-bridge motor drives where fast commutation and low conduction loss are critical.

Key Specifications

ParameterValue and Actual Design Meaning
VDS55 V - Maximum blocking voltage compatible with 42 V automotive systems and 24 V industrial rails
RDS(on) max4.1 mΩ at VGS = 10 V, ID = 80 A - Enables <1 W conduction loss at 100 A in optimized thermal layout
ID cont.100 A at TC = 25 °C - Supported by bondwire-limited current rating and 0.7 K/W RthJC
EAS1090 mJ - Single-pulse avalanche capability allows reliable operation under inductive load switching stress
Qg209–314 nC - Gate drive energy requirement informs selection of gate driver ICs with ≥1 A peak output
tr/tf62 ns each - Fast switching transitions reduce overlap losses in hard-switched topologies
VGS(th)2.1–4.0 V - Ensures turn-on margin above typical microcontroller GPIO noise floor (±0.5 V)

Pinout & Package

IPB100N06S3-04 uses the PG-TO263-3-2 surface-mount package (D²PAK), with exposed drain pad for thermal dissipation. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Gate)Control terminalReceives gate drive signal; requires low-impedance path to minimize ringing due to 14.2 nF Ciss
Pin 2 (Drain)High-side power nodeConnected to exposed copper tab; must be soldered to ≥6 cm² PCB copper area for 40 K/W RthJA
Pin 3 (Source)Reference return pathServes as local ground reference for gate driver; routing must minimize inductance to avoid shoot-through risk

Key Features

FeatureDesign Value
AEC-Q101 qualificationValidated for automotive powertrain applications including engine control units and battery disconnect switches
100% avalanche testedEach unit undergoes single-pulse EAS stress test to guarantee ruggedness in inductive switching
MSL1 reflow ratingWithstands peak reflow temperatures up to 260 °C without delamination or parameter shift
175 °C operating temperatureEnables placement near heat sources (e.g., exhaust manifolds, inverters) without derating
Green (RoHS-compliant)Lead-free termination and halogen-free mold compound meet EU ELV and REACH requirements

Applications

Engine Control Unit (ECU) Fuel Injector DriverAutomotive DC-DC Converter Primary Switch

Use Scenario: High-speed switching of 12 V fuel injectors with 1–5 ms pulse width and 10 A peak current.

IC Role / Device Role / Timing Role: Low-side power switch controlling injector coil current via PWM at 1–10 kHz.

Use Value: 4.1 mΩ RDS(on) limits conduction loss to ≤1.0 W at 10 A, reducing thermal load on ECU PCB.

Use Scenario: Primary-side switch in 12 V → 5 V/3.3 V isolated buck converter for ADAS camera modules.

IC Role / Device Role / Timing Role: Hard-switched MOSFET operating at 250–500 kHz with 80 A peak current during transients.

Use Value: 1090 mJ EAS withstands leakage inductance spikes without failure during overcurrent events.

Electric Power Steering (EPS) Motor Phase Leg12 V Battery Disconnect Switch

Use Scenario: Half-bridge leg in 3-phase EPS motor inverter delivering up to 80 A RMS per phase.

IC Role / Device Role / Timing Role: Synchronous rectifier and freewheeling switch with body diode conducting during dead-time.

Use Value: 0.6–1.3 V VSD and 95 ns trr minimize freewheeling loss and prevent cross-conduction in 20 kHz PWM.

Use Scenario: Solid-state replacement for mechanical relay in 12 V battery main disconnect for start-stop systems.

IC Role / Device Role / Timing Role: High-current bidirectional switch enabling controlled battery isolation during cranking or fault conditions.

Use Value: 100 A continuous rating and 400 A pulsed capability support cold-cranking surge currents without contact welding.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPP100N06S3-04Same die, TO-220-3-1 through-hole package; RthJA = 62 K/W (no PCB copper area dependency)Better suited for prototyping, low-volume assemblies, or legacy through-hole designsSelect when manual soldering, heatsink mounting, or absence of large PCB copper areas is required
IPB100N06S4-03Next-generation OptiMOS®-T4; 3.3 mΩ RDS(on) max, 230 nC Qg, same PG-TO263-3-2 packageHigher efficiency in high-frequency (>500 kHz) SMPS; requires updated gate driver sizingSelect for new designs targeting >95% efficiency in compact DC-DC converters

Compared with IPP100N06S3-04, IPB100N06S3-04 offers superior thermal performance on PCB but requires SMD assembly; versus IPB100N06S4-03, it trades 20% higher RDS(on) for proven field reliability and lower gate drive complexity in 100–250 kHz applications.

Availability

IPB100N06S3-04 is available at Aetrix Electronics and suitable for automotive powertrain control, electric power steering systems, and 12 V battery management requiring stable component supply across extended temperature and lifetime requirements.

Supply support for IPB100N06S3-04 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This device belongs to the OptiMOS®-T2 product line, engineered specifically for high-current, high-reliability automotive power switching applications where avalanche ruggedness and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum allowable gate-source voltage for IPB100N06S3-04?

The absolute maximum gate-source voltage is ±20 V, qualified at –5 V and +20 V per specification. Operation beyond this range risks permanent gate oxide damage. For reliable switching, gate drive should be clamped to 10–15 V for full enhancement and kept below 18 V to avoid overstress during transients.

Can IPB100N06S3-04 be used in parallel configurations?

Yes, it supports paralleling due to its positive temperature coefficient of RDS(on), which promotes current sharing. However, layout symmetry-matching gate trace inductance, source inductance, and thermal coupling-is essential. Use individual gate resistors (≥5 Ω) and Kelvin source connections to ensure balanced dynamic current distribution.

Does the device include an integrated ESD protection diode on the gate?

No, IPB100N06S3-04 does not integrate gate ESD protection. The gate oxide is sensitive to electrostatic discharge; external protection (e.g., TVS diode between gate and source rated ≤20 V) is recommended during handling and PCB assembly, especially in automated manufacturing environments.

What is the significance of the "3PN0604" marking on the device package?

"3PN0604" is the top-side laser marking code assigned by Infineon to identify this specific OptiMOS®-T2 variant. It encodes product family (3P = Power MOSFET), voltage class (N06 = 60 V nominal), current rating (100 = 100 A), and revision (04). It is not a date code or lot identifier but a unique part identity marker per JEDEC standards.

IPB100N06S3-04 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
4.1mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:
4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:
314 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
14230 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
214W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO263-3-2

IPB100N06S3-04 FAQ

1.How can I place an order for IPB100N06S3-04 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB100N06S3-04 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB100N06S3-04 reliable?

The price and inventory of IPB100N06S3-04 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB100N06S3-04 is usually 5 days.

3.What payment methods are accepted for IPB100N06S3-04?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB100N06S3-04 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB100N06S3-04?

IPB100N06S3-04 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB100N06S3-04 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB100N06S3-04?

For technical support, including IPB100N06S3-04 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB100N06S3-04 requirements.

6.How does Aetrix verify that IPB100N06S3-04 is sourced from the original manufacturer or authorized distributors?

All IPB100N06S3-04 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB100N06S3-04 meets industry standards.

7.What is the process for return or replacement of IPB100N06S3-04?

All IPB100N06S3-04 units undergo pre-shipment inspection (PSI). If there is an issue with IPB100N06S3-04, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB100N06S3-04 part is unused and in its original packaging.

Return procedure for IPB100N06S3-04:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPB100N06S3-04 Tags

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