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Infineon Technologies IPB100N06S3L-03

Part No.:
IPB100N06S3L-03
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIPB100N06S3L-03.pdf
Description:
MOSFET N-CH 55V 100A TO263-3-2
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,080

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Product details

Overview

IPB100N06S3L-03 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode MOSFET in PG-TO263-3-2 package, rated for 55 V VDS, 2.7 mΩ max RDS(on) at VGS = 10 V and ID = 80 A, with 100 A continuous drain current at TC = 25 °C and 175 °C maximum junction temperature - deployed in automotive DC-DC converters and motor control inverters.

For engineers reviewing the IPB100N06S3L-03 datasheet, IPB100N06S3L-03 pinout, IPB100N06S3L-03 application, or IPB100N06S3L-03 equivalent, key selection criteria include RDS(on) at 10 V drive, single-pulse avalanche energy (2390 mJ), thermal resistance (RthJC = 0.5 K/W), and AEC-Q101 qualification status for under-hood power stages.

Technical Context

This OptiMOS™-T2 device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance: typical Ciss = 26.24 nF, Coss = 3.29 nF, and Qg = 368–550 nC support high-frequency synchronous rectification up to 100 kHz in 12 V/48 V automotive systems.

Its gate threshold voltage (VGS(th) = 1.2–2.2 V) enables robust 3.3 V and 5 V logic-level drive compatibility, and integrated body diode features trr = 140 ns and Qrr = 205 nC - critical for minimizing commutation losses in half-bridge configurations.

Key Specifications

ParameterValue and Actual Design Meaning
VDS55 V - supports 48 V nominal battery systems with 20 % overvoltage margin
RDS(on) max2.7 mΩ at VGS = 10 V, ID = 80 A - enables <1.5 W conduction loss at 100 A peak in TO263 package
ID continuous100 A at TC = 25 °C - validated for high-current motor phase legs with forced-air cooling
EAS2390 mJ (ID = 50 A) - withstands repetitive inductive turn-off stress without derating in 12 V starter-generator designs
RthJC0.5 K/W - allows direct heatsink mounting for thermal management in space-constrained ECUs
Qg368–550 nC - determines gate driver power requirement and switching loss trade-off at 100 kHz PWM
trr140 ns - limits reverse recovery overshoot and EMI in bidirectional DC-DC topologies

Pinout & Package

IPB100N06S3L-03 is housed in PG-TO263-3-2 (D²PAK) surface-mount package with isolated drain tab, optimized for PCB thermal conduction via large copper area (6 cm² recommended). Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Gate)Control terminalAccepts 0–10 V logic-level drive; requires ≤1.3 Ω gate resistor for optimal dV/dt control
Pin 2 (Drain)High-side power nodeExposed copper tab - must be soldered to ≥6 cm² internal/external copper for RthJC = 0.5 K/W
Pin 3 (Source)Reference return pathProvides Kelvin sense point for accurate current monitoring in high-side switch configurations

Key Features

FeatureDesign Value
AEC-Q101 qualificationValidated for automotive powertrain applications including engine control modules and ADAS actuators
100 % avalanche testedEach unit passes single-pulse EAS stress test - eliminates field failure risk in inductive load switching
MSL1 reflow ratingWithstands 260 °C peak reflow profile - compatible with standard SMT assembly lines without moisture sensitivity concerns
Green product (RoHS)Lead-free and halogen-free construction - meets EU ELV and China RoHS compliance requirements
175 °C operating temperatureEnables placement near heat sources (e.g., IGBT modules) in compact power inverters

Applications

Automotive Starter-Generator Control48 V Mild Hybrid DC-DC Converter

Use Scenario: High-current bidirectional power transfer between 12 V and 48 V domains during regenerative braking and engine start.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in interleaved buck-boost stage, switching at 50–100 kHz.

Use Value: 2.7 mΩ RDS(on) reduces conduction loss by >35 % vs. legacy 4.5 mΩ devices, improving system efficiency from 92.1 % to 94.3 % at 5 kW.

Use Scenario: Voltage regulation for 48 V rail powering electric turbochargers and active suspension controllers.

IC Role / Device Role / Timing Role: High-side main switch in phase-shifted full-bridge topology with ZVS operation.

Use Value: 2390 mJ avalanche capability ensures reliable turn-off under short-circuit fault conditions without external snubbers.

Electric Power Steering (EPS) InverterOnboard Charger (OBC) Primary Switch

Use Scenario: Three-phase inverter driving brushless motor in column-assist EPS systems with tight thermal envelope.

IC Role / Device Role / Timing Role: Phase-leg switch operating at 10–20 kHz with 175 °C junction rating.

Use Value: RthJC = 0.5 K/W enables direct heatsink mounting on aluminum housing, reducing thermal interface layers and system BOM cost.

Use Scenario: Primary-side hard-switched MOSFET in 3.3 kW OBC AC/DC stage with PFC + LLC architecture.

IC Role / Device Role / Timing Role: Fast-recovery body diode used for synchronous rectification in LLC secondary side.

Use Value: trr = 140 ns and Qrr = 205 nC minimize reverse recovery loss and EMI generation during zero-voltage switching transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPP100N06S3L-03Same die, TO-220-3-1 through-hole package; RthJA = 62 K/W (leaded)Suitable for prototyping and low-volume industrial SMPS where manual assembly is preferredSelect when board-level reworkability or vertical heatsink mounting is required
IPI100N06S3L-03Same die, TO-262-3-1 package; identical RthJC but no isolated drain tabUsed in cost-sensitive automotive body electronics where PCB copper area is limitedChoose when thermal performance must match IPB but mechanical footprint must fit TO-262 socket

Compared with IPP100N06S3L-03 and IPI100N06S3L-03, the IPB100N06S3L-03 offers superior thermal performance in surface-mount applications due to its isolated drain tab and optimized D²PAK layout - enabling higher power density in automated production of automotive ECUs.

Availability

IPB100N06S3L-03 is available at Aetrix Electronics and suitable for automotive power conversion, electric power steering, and 48 V mild hybrid systems requiring stable component supply across extended temperature and lifetime requirements.

Supply support for IPB100N06S3L-03 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global manufacturing and R&D centers.

This part belongs to the OptiMOS™-T2 family - engineered specifically for high-efficiency, high-reliability automotive power stages demanding AEC-Q101 compliance and robust avalanche performance.

FAQ

Is IPB100N06S3L-03 suitable for 48 V battery system main switch applications?

Yes - its 55 V VDS, 100 A continuous current rating, and 2390 mJ avalanche energy make it appropriate for main contactor replacement in 48 V architectures. It supports sustained 80 A operation at TC = 100 °C with proper heatsinking and has been validated in ISO 16750-2 pulse testing per AEC-Q101.

What is the maximum gate-source voltage rating and why does it matter for drive circuit design?

The absolute maximum VGS is ±16 V. Exceeding this risks oxide breakdown and permanent gate damage. Drive circuits must limit transient overshoot using clamping diodes or RC snubbers, especially with fast gate drivers and long PCB traces - typical gate plateau voltage is 3.5 V, confirming safe 5 V logic-level compatibility.

How does the body diode performance compare to discrete Schottky alternatives in synchronous rectification?

Its body diode achieves VSD = 0.6–1.3 V at 80 A and trr = 140 ns, outperforming many 55 V Schottky diodes in forward voltage at high current but with higher reverse recovery charge. For ZVS designs, this enables lower conduction loss than external diodes while avoiding parallel device mismatch issues.

Does IPB100N06S3L-03 require derating when operated at 175 °C junction temperature?

Yes - RDS(on) increases ~2.2× from 25 °C to 175 °C (per Fig. 8), raising conduction loss proportionally. Derating curves in the datasheet show ID must be reduced to ~45 A at TC = 100 °C to maintain Tj ≤ 175 °C under worst-case thermal resistance conditions.

IPB100N06S3L-03 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
2.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:
2.2V @ 230µA
Gate Charge (Qg) (Max) @ Vgs:
550 nC @ 10 V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
26240 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
300W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO263-3-2

IPB100N06S3L-03 FAQ

1.How can I place an order for IPB100N06S3L-03 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB100N06S3L-03 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB100N06S3L-03 reliable?

The price and inventory of IPB100N06S3L-03 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB100N06S3L-03 is usually 5 days.

3.What payment methods are accepted for IPB100N06S3L-03?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB100N06S3L-03 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB100N06S3L-03?

IPB100N06S3L-03 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB100N06S3L-03 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB100N06S3L-03?

For technical support, including IPB100N06S3L-03 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB100N06S3L-03 requirements.

6.How does Aetrix verify that IPB100N06S3L-03 is sourced from the original manufacturer or authorized distributors?

All IPB100N06S3L-03 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB100N06S3L-03 meets industry standards.

7.What is the process for return or replacement of IPB100N06S3L-03?

All IPB100N06S3L-03 units undergo pre-shipment inspection (PSI). If there is an issue with IPB100N06S3L-03, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB100N06S3L-03 part is unused and in its original packaging.

Return procedure for IPB100N06S3L-03:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPB100N06S3L-03 Tags

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