Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB100N08S207ATMA1

Name: IPB100N08S207ATMA1
Brand: Infineon Technologies
SKU: IPB100N08S207ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPB100N08S207ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB100N08S207ATMA1.pdf

Description:: MOSFET N-CH 75V 100A TO263-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,639

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPB100N08S207ATMA1 from Infineon is an N-channel enhancement-mode automotive-qualified OptiMOS™ power MOSFET in PG-TO263-3-2 package, rated for 75 V V_DS, 100 A continuous drain current at T_C = 25 °C, and ultra-low 5.8–7.1 mΩ R_DS(on) at V_GS = 10 V. It is 100% avalanche tested and designed for high-efficiency DC-DC converters and motor control stages in engine management systems.

For engineers reviewing the IPB100N08S207ATMA1 datasheet, IPB100N08S207ATMA1 pinout, IPB100N08S207ATMA1 application, or IPB100N08S207ATMA1 equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C maximum junction temperature, 0.5 K/W thermal resistance (junction-to-case), low gate charge (Q_g = 144–200 nC), and integrated body diode with t_rr = 90–110 ns.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 2nd generation trench technology optimized for low conduction and switching losses in high-current 12 V/24 V automotive systems. Its gate threshold voltage (2.1–4.0 V) enables robust TTL/CMOS-level drive compatibility while maintaining noise immunity.

The device integrates a fast-recovery body diode (V_SD = 0.9–1.3 V at I_F = 80 A, t_rr = 90–110 ns) and supports hard-switched topologies requiring single-pulse avalanche energy rating of 810 mJ at I_D = 80 A - critical for load dump and inductive turn-off protection.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - Maximum blocking voltage compatible with 24 V commercial/automotive battery systems including load-dump transients.
R_DS(on) max	7.1 mΩ at V_GS = 10 V, I_D = 80 A - Enables <1 W conduction loss at 100 A, reducing heatsink requirements in compact power stages.
I_D continuous	100 A at T_C = 25 °C - Supports high-current motor drivers and starter solenoid interfaces without parallel devices.
E_AS	810 mJ - Single-pulse avalanche capability ensures reliability during inductive switching faults without external snubbers.
Q_g	144–200 nC - Low total gate charge reduces driver power demand and enables efficient 100–200 kHz PWM operation.
t_r/t_f	51 ns / 30 ns - Fast switching transitions minimize overlap loss in synchronous buck and half-bridge configurations.
R_thJC	0.5 K/W - Enables direct mounting to heatsinks for thermally constrained under-hood applications.

Pinout & Package

IPB100N08S207ATMA1 uses the PG-TO263-3-2 surface-mount package (D²PAK), featuring isolated drain tab for PCB thermal relief and standard 3-pin layout optimized for high-current routing and automated assembly.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (low-side reference)	Connected to ground or low-side switch node; carries full load current and defines gate drive reference.
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <200 nC charge; sensitive to ESD and requires RC damping for ringing suppression.
Pin 3 (Drain)	Power output / high-side connection	Exposed copper pad on backside; electrically connected to drain; must be soldered to large copper area for thermal and current handling.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive under-hood use up to 175 °C junction temperature and 2000+ thermal cycles.
100% avalanche tested	Each unit subjected to single-pulse avalanche stress per JEDEC JESD22-A109, ensuring ruggedness in fault conditions.
Ultra-low R_DS(on)	5.8 mΩ typical at 100 A enables >97% efficiency in 12 V/100 A DC-DC stages at 100 kHz.
Green package	Lead-free, RoHS-compliant construction with MSL1 rating for lead-free reflow up to 260 °C peak.
Fast body diode	t_rr = 90–110 ns and Q_rr = 290–360 nC reduce reverse recovery loss in synchronous rectification and freewheeling paths.

Applications

Engine Control Unit (ECU) High-Side Driver

Automotive DC-DC Converter (12 V → 5 V/3.3 V)

Use Scenario: Switching 12 V battery supply to fuel injector or ignition coil primary winding with PWM duty cycling.

IC Role / Device Role / Timing Role: High-current, high-voltage power switch operating in hard-switched mode at ≤10 kHz.

Use Value: 75 V V_DS margin accommodates ISO 7637-2 pulse 5a (load dump up to 60 V), and 810 mJ E_AS prevents failure during coil flyback events.

Use Scenario: Primary-side switch in non-isolated buck converter delivering regulated 5 V for microcontroller and sensor rails.

IC Role / Device Role / Timing Role: Synchronous rectifier and main power switch in 200 kHz fixed-frequency topology.

Use Value: 5.8 mΩ R_DS(on) limits conduction loss to <0.6 W at 100 A, enabling >95% efficiency without forced air cooling.

Electric Power Steering (EPS) Motor Phase Leg

12 V Automotive Starter Solenoid Interface

Use Scenario: Half-bridge leg driving brushless DC motor windings in torque-assist system.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter with 10–20 kHz PWM and active freewheeling via body diode.

Use Value: 90–110 ns t_rr and low Q_rr minimize shoot-through risk and reduce diode conduction loss during dead-time commutation.

Use Scenario: Solid-state replacement for mechanical starter relay, controlling 12 V cranking current (≥200 A peak).

IC Role / Device Role / Timing Role: High-current, low-duty-cycle power switch activated for <2 s during engine start.

Use Value: 400 A pulsed drain current rating and 175 °C T_j support repeated cranking cycles without thermal derating or bondwire failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP100N08S207ATMA1	PG-TO220-3-1 through-hole package; identical electrical specs but higher R_thJA (62 K/W vs. 40 K/W on PCB).	Better suited for prototyping or low-volume assemblies where manual soldering and heatsink clamping are preferred.	Select when board-level thermal design is less constrained and mechanical mounting flexibility is prioritized over footprint density.
IPI100N08S207ATMA1	PG-TO262-3-1 (I2PAK) package; same die but different leadframe geometry and slightly higher R_thJC (0.55 K/W).	Offers intermediate thermal performance and compatibility with legacy TO-262 footprints in production lines.	Choose for drop-in replacement in existing TO-262 layouts where requalification time is limited but improved R_DS(on) over prior generations is required.

Compared with IPP100N08S207ATMA1 and IPI100N08S207ATMA1, IPB100N08S207ATMA1 delivers superior thermal performance on PCBs due to its D²PAK drain-tab soldering interface, enabling higher sustained current in space-constrained automotive modules without added heatsinks.

Availability

IPB100N08S207ATMA1 is available at Aetrix Electronics and suitable for automotive engine control units, electric power steering systems, and 12 V/24 V DC-DC converters requiring stable component supply across extended product lifecycles.

Supply support for IPB100N08S207ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™ 2nd generation power MOSFET product line, engineered specifically for high-current, high-temperature automotive power conversion and motor control applications demanding AEC-Q101 compliance and field-proven ruggedness.

FAQ

What is the maximum allowable gate-source voltage for IPB100N08S207ATMA1?

The absolute maximum gate-source voltage is ±20 V, qualified at both -20 V and +20 V per datasheet Rev. 1.0. Exceeding this range risks permanent gate oxide damage. For reliable operation, gate drive should be clamped to 12–15 V during switching and held at 0 V during off-state to prevent unintended turn-on from dv/dt coupling.

Does IPB100N08S207ATMA1 include an integrated body diode, and what are its key parameters?

Yes, it features a monolithically integrated fast-recovery body diode. Key parameters include forward voltage V_SD = 0.9–1.3 V at I_F = 80 A and T_j = 25 °C, reverse recovery time t_rr = 90–110 ns, and reverse recovery charge Q_rr = 290–360 nC under specified test conditions (V_R = 40 V, di_F/dt = 100 A/µs).

How does the thermal resistance R_thJC = 0.5 K/W translate to real-world PCB layout requirements?

This value assumes direct thermal conduction from the die to the case (drain tab). To achieve it, the drain pad must be soldered to ≥6 cm² of 70 µm thick copper on FR4 PCB, vertically oriented in still air. Smaller copper areas increase effective R_thJC, requiring derating of I_D or adding external heatsinking to maintain T_j ≤ 175 °C.

Is IPB100N08S207ATMA1 suitable for use in life-support medical devices?

No. Infineon explicitly restricts use in life-support devices or systems unless expressly approved in writing. This MOSFET is qualified for automotive applications per AEC-Q101 but lacks the process controls, documentation, and redundancy required for implantable or critical-care medical equipment per ISO 13485 and IEC 62304.

IPB100N08S207ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6.8mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 200 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB100N08S207ATMA1 FAQ

1.How can I place an order for IPB100N08S207ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB100N08S207ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB100N08S207ATMA1 reliable?

The price and inventory of IPB100N08S207ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB100N08S207ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB100N08S207ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB100N08S207ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB100N08S207ATMA1?

IPB100N08S207ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB100N08S207ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB100N08S207ATMA1?

For technical support, including IPB100N08S207ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB100N08S207ATMA1 requirements.

6.How does Aetrix verify that IPB100N08S207ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB100N08S207ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB100N08S207ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB100N08S207ATMA1?

All IPB100N08S207ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB100N08S207ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB100N08S207ATMA1 part is unused and in its original packaging.

Return procedure for IPB100N08S207ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.