Infineon Technologies IPB100N10S305ATMA2

Overview

IPB100N10S305ATMA2 from Infineon Technologies is a 100 V, 100 A N-channel enhancement-mode MOSFET in PG-TO263-3-2 (D²PAK) package, AEC-Q101 qualified for automotive applications, with R_DS(on) max of 4.8 mΩ at V_GS = 10 V and 100 A, 175 °C maximum junction temperature, and 100% single-pulse avalanche tested to 1445 mJ. It serves as a high-current main switch in 48 V battery disconnect and motor phase-leg circuits.

For engineers reviewing the IPB100N10S305ATMA2 datasheet, IPB100N10S305ATMA2 pinout, IPB100N10S305ATMA2 application, or IPB100N10S305ATMA2 equivalent, key selection criteria include its 0.5 K/W thermal resistance (junction-to-case), 100 A continuous drain rating at T_C = 100 °C, integrated body diode with 108 ns reverse recovery time, and MSL1 reflow compatibility up to 260 °C.

Technical Context

This OptiMOS™-T power transistor uses trench-gate superjunction technology optimized for low conduction and switching losses in high-current DC-DC and motor control topologies. Its gate threshold voltage range (2.0–4.0 V) enables robust TTL/CMOS-level drive compatibility while maintaining noise immunity.

The device integrates a fast-recovery body diode (t_rr = 108 ns, Q_rr = 380 nC) and supports hard-switched operation with 400 A pulsed drain current capability. Thermal design is enabled by its low R_thJC = 0.5 K/W and validated 6 cm² PCB copper cooling area performance.

Key Specifications

Pinout & Package

IPB100N10S305ATMA2 is housed in PG-TO263-3-2 (D²PAK) surface-mount package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard D²PAK footprint: Pin 1 = Gate, Pin 2 = Source, Pin 3 = Drain (tab).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100 V MOSFET applications.

Compared with IPP100N10S3-05 and IPI100N10S3-05, IPB100N10S305ATMA2 delivers superior thermal density via D²PAK's lower R_thJC and optimized PCB copper coupling-critical for space-constrained automotive modules where 0.5 K/W junction-to-case resistance directly reduces heatsink mass and system weight.

Availability

IPB100N10S305ATMA2 is available at Aetrix Electronics and suitable for 48 V battery management systems, electric power steering controllers, onboard chargers, and high-efficiency DC-DC converters requiring stable component supply and automotive-grade reliability.

Supply support for IPB100N10S305ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D centers focused on energy-efficient and safety-critical electronics.

This device belongs to the OptiMOS™-T family, engineered specifically for high-current, high-temperature automotive power switching-emphasizing avalanche ruggedness, AEC-Q101 compliance, and thermally optimized packaging for next-generation 48 V architectures.

FAQ

What is the maximum allowable gate-source voltage for IPB100N10S305ATMA2?

The absolute maximum gate-source voltage is ±20 V. Operation beyond ±15 V risks permanent gate oxide damage. For reliable 10 V drive, use a gate driver with tight regulation and transient clamping, especially in noisy automotive environments where load dump or inductive kick can induce overshoot.

Does IPB100N10S305ATMA2 require a gate resistor, and what value is recommended?

Yes-a gate resistor is required to control dV/dt and prevent oscillation. For 100 A switching at 20–100 kHz, a 3.3–5.6 Ω resistor is typical. Lower values (≤3.3 Ω) reduce switching time but increase EMI; higher values (>10 Ω) suppress ringing but raise switching losses. Layout-dependent parasitic inductance must also be minimized.

Can IPB100N10S305ATMA2 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (α ≈ 0.56) ensures inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual gate resistors. Derate total current by 15% to account for thermal coupling and parameter spread across units.

Is the body diode suitable for synchronous rectification in a buck converter?

Yes-the body diode has t_rr = 108 ns and Q_rr = 380 nC at 25 °C, making it viable for synchronous rectification up to ~200 kHz. However, for >300 kHz operation or high light-load efficiency, an external Schottky diode may be preferred due to lower forward voltage and negligible reverse recovery.