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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB10N03LB

Name: IPB10N03LB
Brand: Infineon Technologies
SKU: IPB10N03LB
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB10N03LB

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB10N03LB.pdf

Description:: MOSFET N-CH 30V 50A TO263-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPB10N03LB from Infineon Technologies is an N-channel logic-level OptiMOS®2 power MOSFET in PG-TO263-3 package, rated for 30 V V_DS, 50 A continuous drain current at T_C = 25 °C, and 9.6 mΩ max R_DS(on) at V_GS = 10 V. It delivers high-frequency switching performance in synchronous buck converters and motor drive half-bridges.

For engineers reviewing the IPB10N03LB datasheet, IPB10N03LB pinout, IPB10N03LB application, or IPB10N03LB equivalent, key selection criteria include its 2.6 K/W junction-to-case thermal resistance, 175 °C maximum operating temperature, dv/dt ruggedness (6 kV/µs), low gate charge (Q_g = 10–13 nC), and logic-level gate drive compatibility (V_GS(th) = 1.2–2.0 V).

Technical Context

This device employs a trench-based silicon process optimized for low R_DS(on) × Q_g figure-of-merit (FOM), enabling high-efficiency operation in 48 V input DC/DC converters and automotive body control modules. Its dv/dt rating ensures robustness against parasitic turn-on in hard-switched topologies.

The integrated body diode supports synchronous rectification with 10 nC reverse recovery charge (Q_rr) and 0.99–1.2 V forward voltage (V_SD) at 50 A, while the 175 °C junction rating allows derated operation in thermally constrained environments without external heatsink oversizing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V automotive and 36 V industrial bus systems.
R_DS(on), max	9.6 mΩ at V_GS = 10 V - Enables <1.2 W conduction loss at 50 A, reducing thermal load on PCB copper area.
I_D, cont.	50 A at T_C = 25 °C - Supports high-current output stages in server VRMs and BLDC motor controllers.
Q_g	10–13 nC - Low total gate charge minimizes driver power and enables >1 MHz switching in resonant converters.
R_thJC	2.6 K/W - Allows direct thermal coupling to heatsink via exposed drain pad, critical for compact power modules.
T_j,max	175 °C - Permits operation in under-hood automotive locations and sealed industrial enclosures without derating.
dv/dt rating	6 kV/µs - Confirmed immunity to false triggering during fast voltage transients in half-bridge configurations.

Pinout & Package

IPB10N03LB uses the PG-TO263-3 (D²PAK) surface-mount package with exposed drain pad for thermal and electrical connection. The three terminals are arranged as Drain (tab), Source (pin 1), and Gate (pin 2).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path collector / heat sink interface	Exposed copper pad electrically connected to drain; must be soldered to ≥6 cm² PCB copper for thermal compliance.
Source (Pin 1)	Reference node for gate drive and current sensing	Low-inductance source return path essential for stable gate control and accurate current monitoring.
Gate (Pin 2)	Control terminal for channel modulation	Logic-compatible input (V_GS(th) ≤ 2.0 V); requires <13 nC charge for full enhancement.

Key Features

Feature	Design Value
Optimized FOM (R_DS(on) × Q_g)	Sub-100 mΩ·nC enables high efficiency at 500 kHz–1 MHz switching frequencies in POL converters.
JEDEC-qualified reliability	Validated per J-STD-20/JESD22 for reflow, humidity, and temperature cycling - suitable for automotive production.
175 °C rated junction	Eliminates need for thermal derating in ambient temperatures up to 125 °C with standard PCB cooling.
Low Q_rr body diode	10 nC reverse recovery charge reduces switching losses and EMI in synchronous rectifier applications.
Pb-free & RoHS compliant	Meets EU Directive 2011/65/EU and automotive ELV requirements without lead or hazardous substances.

Applications

Automotive Body Control Module

Server Point-of-Load Converter

Use Scenario: High-side load switch controlling headlight, fan, or solenoid drivers in 12 V/24 V vehicle networks.

IC Role / Device Role / Timing Role: N-channel logic-level power switch replacing mechanical relays; driven directly by MCU GPIO.

Use Value: 9.6 mΩ R_DS(on) limits voltage drop to <0.5 V at 50 A, eliminating contact bounce and extending service life.

Use Scenario: Synchronous rectifier in multiphase 48 V-to-1 V VRM powering AI accelerators and CPUs.

IC Role / Device Role / Timing Role: Low-side switch in buck converter phase leg; operated at 800 kHz with 4.5 V gate drive.

Use Value: 11.8 mΩ typ R_DS(on) at V_GS = 4.5 V ensures <0.6 W conduction loss per phase at 30 A.

Industrial Motor Drive Half-Bridge

Telecom DC/DC Intermediate Bus Converter

Use Scenario: Upper and lower switches in 24 V BLDC inverter driving HVAC blowers or conveyor motors.

IC Role / Device Role / Timing Role: Fast-switching MOSFET with 6 kV/µs dv/dt immunity preventing shoot-through during commutation.

Use Value: 26 ns max t_d(off) and 4.5 ns max t_f enable precise dead-time control and reduced switching overlap loss.

Use Scenario: Primary-side switch in isolated 48 V-to-12 V flyback or active clamp forward converter.

IC Role / Device Role / Timing Role: High-voltage, high-current switching element handling 50 A pulsed drain current during transient loads.

Use Value: 200 A I_D,pulse rating supports 4× overload capability for telecom surge testing (GR-1089).

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL100N3LLH6	R_DS(on) = 10.5 mΩ (max), Q_g = 14.5 nC, same PG-TO263-3 package	Slightly higher conduction loss and gate drive energy; identical thermal footprint	Acceptable where margin exists in thermal design and gate driver capability exceeds 14.5 nC
IRF7470PBF	R_DS(on) = 12.5 mΩ (max), Q_g = 11.5 nC, TO-263AB package (non-exposed tab)	Higher R_DS(on) and inferior thermal resistance (R_thJC = 3.0 K/W vs. 2.6 K/W)	Only suitable if board layout cannot accommodate exposed-drain thermal pad or junction temp remains <150 °C

Compared with STL100N3LLH6 and IRF7470PBF, IPB10N03LB offers the lowest R_DS(on) × Q_g FOM and best thermal performance, making it preferred for space-constrained, high-efficiency 24–48 V power stages where thermal management is critical.

Availability

IPB10N03LB is available at Aetrix Electronics and suitable for automotive body electronics, server point-of-load converters, industrial motor drives, and telecom intermediate bus converters requiring stable component supply across multi-year production cycles.

Supply support for IPB10N03LB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and RF solutions, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101.

IPB10N03LB belongs to the OptiMOS®2 product line, engineered specifically for high-frequency, high-current DC/DC conversion in automotive and industrial applications where low R_DS(on), fast switching, and thermal robustness are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IPB10N03LB supports 41 A continuous drain current when the case temperature is maintained at 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PG-TO263-3 package and must be validated using actual PCB copper area and airflow conditions.

Can IPB10N03LB be driven directly by a 3.3 V microcontroller GPIO?

Yes - with a typical gate threshold voltage of 1.6 V and maximum of 2.0 V, the IPB10N03LB achieves partial enhancement at 3.3 V. However, full R_DS(on) specification (9.6 mΩ) requires V_GS ≥ 10 V; for optimal efficiency, a dedicated gate driver or level shifter is recommended.

Is the body diode suitable for synchronous rectification?

Yes - the integrated body diode has a typical forward voltage of 0.99 V at 50 A and 25 °C, with 10 nC reverse recovery charge (Q_rr). These values support efficient synchronous rectification in buck converters up to 1 MHz, provided gate timing avoids cross-conduction.

What is the recommended PCB layout for thermal performance?

Infineon specifies a minimum 6 cm² copper area (single-layer, 70 µm thick) connected to the exposed drain pad on FR4 PCB. The board must be mounted vertically in still air; thermal vias under the pad and multilayer copper pours significantly improve R_thJA beyond the 40 K/W baseline.

IPB10N03LB Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.6mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1639 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 58W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB10N03LB FAQ

1.How can I place an order for IPB10N03LB through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB10N03LB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB10N03LB reliable?

The price and inventory of IPB10N03LB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB10N03LB is usually 5 days.

3.What payment methods are accepted for IPB10N03LB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB10N03LB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB10N03LB?

IPB10N03LB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB10N03LB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB10N03LB?

For technical support, including IPB10N03LB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB10N03LB requirements.

6.How does Aetrix verify that IPB10N03LB is sourced from the original manufacturer or authorized distributors?

All IPB10N03LB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB10N03LB meets industry standards.

7.What is the process for return or replacement of IPB10N03LB?

All IPB10N03LB units undergo pre-shipment inspection (PSI). If there is an issue with IPB10N03LB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB10N03LB part is unused and in its original packaging.

Return procedure for IPB10N03LB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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