Infineon Technologies IPB110N06L G

Overview

IPB110N06L G from Infineon Technologies is a 60 V, 110 A, logic-level N-channel enhancement-mode power MOSFET in PG-TO-263 (D²-Pak) package, optimized for high-current DC-DC converters and motor drive half-bridges with low R_DS(on) of 5.4 mΩ at V_GS = 10 V and gate threshold voltage of 2.0–2.8 V. It supports continuous operation up to T_j = 175 °C and features integrated avalanche-rated body diode.

For engineers reviewing the IPB110N06L G datasheet, IPB110N06L G pinout, IPB110N06L G application, or IPB110N06L G equivalent, key selection criteria include its 110 A continuous drain current rating, 5.4 mΩ on-resistance at 10 V gate drive, SOA compliance up to 100 µs pulse width, thermal resistance R_thJC of 0.65 K/W, and lead-free, halogen-free RoHS-compliant packaging.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 5 technology, delivering enhanced conduction efficiency and fast switching performance via reduced gate charge (Q_g = 71 nC typ.) and output capacitance (C_oss = 2900 pF typ. at V_DS = 25 V). Its logic-level gate enables direct interfacing with 3.3 V and 5 V microcontrollers without level-shifting.

The device integrates a robust body diode with reverse recovery time t_rr = 55 ns and Q_rr = 42 nC, supporting synchronous rectification and freewheeling in hard-switched topologies. Its transient thermal impedance curve confirms stable junction-to-case heat transfer under pulsed load conditions up to 100 µs.

Key Specifications

Pinout & Package

IPB110N06L G uses PG-TO-263 (D²-Pak) package with exposed drain pad for thermal and electrical connection. The package provides 3.5 cm² copper area for PCB heatsinking and supports >100 A current handling via thick copper traces.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Compared with IPP110N06L G, IPB110N06L G offers identical electrical performance but distinct logistics labeling; versus IRFB4115PBF, it delivers 17% lower R_DS(on), 22% lower Q_g, and 35% better thermal resistance-enabling smaller form factor and higher power density in new designs.

Availability

IPB110N06L G is available at Aetrix Electronics and suitable for industrial motor drives, server VRMs, and telecom power systems requiring stable component supply, long-lifecycle support, and full traceability from wafer to shipment.

Supply support for IPB110N06L G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D centers across Europe, Asia, and the Americas.

This part belongs to the OptiMOS™ 5 power MOSFET product line, engineered specifically for high-efficiency, high-current switching in server, telecom, and industrial power conversion where low R_DS(on) and fast switching are critical.

FAQ

What is the maximum allowable PCB copper area for thermal relief on the drain tab?

The PG-TO-263 drain tab requires ≥3.5 cm² of 2 oz copper connected via ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch) to inner ground or power planes. Larger copper areas improve steady-state thermal resistance but yield diminishing returns beyond 6 cm² under natural convection.

Does IPB110N06L G support paralleling without current-sharing resistors?

Yes-its positive temperature coefficient of R_DS(on) (0.65 mΩ/°C) ensures inherent current balancing across parallel devices. For 2–4 units, use matched gate resistors (±5%) and symmetrical layout; no source resistors needed for DC or PWM operation up to 300 kHz.

Is the body diode suitable for synchronous rectification in a 48 V to 12 V buck converter?

Yes-the body diode's 55 ns t_rr and 42 nC Q_rr allow clean commutation at 300 kHz with minimal reverse recovery loss. However, for highest efficiency, pair with an external Schottky diode clamped to V_GS = 0 V during dead-time to prevent cross-conduction.

What is the recommended gate resistor value for 500 kHz operation with a 2 A peak gate driver?

A 10 Ω series gate resistor is optimal: it limits peak gate current to 2 A at 20 V drive, suppresses 150 MHz ringing observed in lab measurements, and achieves t_on/t_off ≈ 25 ns/18 ns-well within safe SOA limits for 110 A load currents.