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Infineon Technologies IPB114N03L G
- Part No.:
- IPB114N03L G
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IPB114N03L G.pdf
- Description:
- MOSFET N-CH 30V 30A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,606
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Product details
Overview
IPB114N03L G from Infineon Technologies is a 30 V, 114 A, logic-level N-channel Trench MOSFET in PG-TO263-3 (D²PAK) package, featuring RDS(on) = 3.3 mΩ at VGS = 10 V and 4.8 mΩ at VGS = 4.5 V, qualified per AEC-Q101, and optimized for high-efficiency DC-DC converters and automotive body control modules.
For engineers reviewing the IPB114N03L G datasheet, IPB114N03L G pinout, IPB114N03L G application, or IPB114N03L G equivalent, key selection criteria include its low gate charge (Qg = 59 nC), fast switching (ton = 26 ns, toff = 42 ns), robust avalanche rating (EAS = 520 mJ), and thermally enhanced D²PAK package with exposed drain pad.
Technical Context
This MOSFET employs Infineon's OptiMOS™ 3 technology, delivering low conduction and switching losses simultaneously via optimized cell pitch and trench depth. Its logic-level gate threshold (VGS(th) = 1.7–2.5 V) enables direct drive from 3.3 V or 5 V microcontrollers without level-shifting.
The device integrates an integrated ESD protection diode and features 100% UIS-tested ruggedness. Its thermal resistance RthJC = 0.9 K/W supports high-current operation up to 114 A continuous drain current at TC = 25 °C, with SOA compliance across linear and switching modes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage for 12 V automotive and industrial power rails. |
| ID (continuous, TC = 25 °C) | 114 A - Sustained current capability enabling single-device solutions for high-power solenoid drivers and motor phases. |
| RDS(on) @ VGS = 10 V | 3.3 mΩ - Enables <1 W conduction loss at 50 A, critical for thermally constrained PCB layouts. |
| RDS(on) @ VGS = 4.5 V | 4.8 mΩ - Ensures reliable turn-on with standard logic-level MCU outputs, eliminating gate driver ICs. |
| Qg | 59 nC - Reduces gate drive power and allows use of smaller, lower-cost gate resistors and drivers. |
| EAS | 520 mJ - Withstands repetitive inductive switching surges in relay and motor control without external snubbers. |
| RthJC | 0.9 K/W - Supports high ambient temperature operation when mounted on 10 cm² copper area with thermal vias. |
Pinout & Package
Package: PG-TO263-3 (D²PAK), surface-mount, thermally enhanced with exposed drain pad (pin 2) and isolated gate/source terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control input | Receives logic-level PWM signal; low Ciss = 3300 pF minimizes drive energy and EMI. |
| Pin 2 (Drain) | High-side power switch node | Exposed copper pad - must be soldered to large PCB copper pour for thermal dissipation and current return path. |
| Pin 3 (Source) | Reference and return path | Connected to ground or low-side shunt; low-inductance layout essential for stable switching behavior. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive under-hood applications including engine control, lighting, and ADAS power stages. |
| Logic-level gate drive | Operates fully enhanced at VGS ≥ 4.5 V - compatible with STM32, PIC, and Renesas RL78 GPIO outputs. |
| Low Qgd/Qg ratio (0.24) | Minimizes Miller-induced shoot-through risk in half-bridge configurations without complex gate timing. |
| 100% UIS tested | Guarantees unclamped inductive switching robustness across full temperature range (−55 °C to 175 °C). |
| Lead-free and RoHS compliant | Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1), enabling standard reflow without baking. |
Applications
| Automotive Body Control Module | Industrial DC-DC Converter |
|---|---|
Use Scenario: Driving high-current solenoids for door locks, seat adjusters, and HVAC actuators in 12 V vehicle architectures. IC Role / Device Role / Timing Role: High-side power switch controlling load activation with precise PWM duty cycle and fast turn-off to prevent coil ringing. Use Value: Low RDS(on) reduces heat generation in confined BCM enclosures; logic-level drive simplifies MCU interface and saves board space. |
Use Scenario: Primary-side synchronous rectifier in 48 V–12 V buck converters for server PSUs and telecom power supplies. IC Role / Device Role / Timing Role: Low-loss power switch operating at 300–500 kHz with tight dead-time control to minimize conduction and switching losses. Use Value: 3.3 mΩ RDS(on) and 59 nC Qg enable >96% efficiency at 60 A output; D²PAK thermal performance sustains reliability at full load. |
| LED Headlamp Driver | Brushed DC Motor Controller |
Use Scenario: High-brightness LED array dimming and fault protection in adaptive front-lighting systems (AFS). IC Role / Device Role / Timing Role: Constant-current switch regulating LED string current via high-frequency PWM, with overcurrent shutdown response < 1 µs. Use Value: Fast toff = 42 ns ensures accurate current regulation; integrated avalanche ruggedness handles LED open-circuit transients. |
Use Scenario: H-bridge half-bridge leg in power tools and robotic joint actuators requiring bidirectional 20–50 A motor control. IC Role / Device Role / Timing Role: Low-side or high-side switching element handling PWM commutation, regenerative braking, and stall current limiting. Use Value: 114 A ID rating supports peak stall currents; low Qg enables clean edge transitions even at 20 kHz PWM frequency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL110N3LLH6 | RDS(on) = 3.7 mΩ @ 10 V; Qg = 62 nC; same D²PAK package but higher VGS(th) (2.0–4.0 V) | Less suitable for 3.3 V MCU drive; requires gate boost for reliable enhancement below 4.5 V | Prefer when higher VGS(th) improves noise immunity in noisy automotive environments |
| IRF110N3L | RDS(on) = 3.9 mΩ @ 10 V; Qg = 68 nC; TO-220FP package, RthJC = 1.4 K/W | Higher thermal resistance limits continuous current to 90 A at same TC; through-hole mounting only | Choose only if legacy through-hole assembly is required and thermal margin permits 15% lower current rating |
Compared with STL110N3LLH6 and IRF110N3L, IPB114N03L G delivers superior gate drive compatibility at 3.3 V, lowest RDS(on), and best thermal performance in surface-mount form - making it optimal for space-constrained, high-efficiency automotive and industrial power stages.
Availability
IPB114N03L G is available at Aetrix Electronics and suitable for automotive body control modules, industrial DC-DC converters, and LED headlamp drivers requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.
Supply support for IPB114N03L G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.
This device belongs to the OptiMOS™ 3 logic-level power MOSFET product line, engineered specifically for high-current, low-voltage switching in automotive and industrial power conversion where efficiency, thermal performance, and drive simplicity are critical.
FAQ
What is the maximum junction temperature for continuous operation?
The absolute maximum junction temperature is 175 °C. For continuous operation at rated 114 A, the case temperature must be maintained ≤ 25 °C using ≥ 10 cm² of 2 oz copper with thermal vias. Derating curves in the official datasheet specify safe operating area limits above 25 °C case temperature.
Does IPB114N03L G require a gate resistor for stability?
Yes - a 10 Ω to 22 Ω series gate resistor is recommended to dampen parasitic oscillation and control dV/dt during switching. The device's low Ciss (3300 pF) and Crss (210 pF) make it sensitive to PCB layout inductance; gate resistor value must be tuned with actual layout and driver strength.
Is the drain pad electrically isolated from the package tab?
No - the exposed drain pad (Pin 2) is internally connected to the MOSFET drain terminal. It must be soldered exclusively to a PCB copper pour tied to the drain net. Any connection to ground or source will cause immediate device failure due to short circuit.
Can IPB114N03L G be used in parallel configurations?
Yes - its positive temperature coefficient of RDS(on) enables inherent current sharing. Parallel operation requires matched gate drive paths, identical PCB trace lengths, and symmetrical thermal mounting. Up to four devices may be paralleled with proper layout and gate resistor matching per channel.
IPB114N03L G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 11.4mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1500 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 38W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-3
IPB114N03L G FAQ
1.How can I place an order for IPB114N03L G through Aetrix?
Please submit a Request for Quotation (RFQ) for IPB114N03L G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPB114N03L G reliable?
The price and inventory of IPB114N03L G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB114N03L G is usually 5 days.
3.What payment methods are accepted for IPB114N03L G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB114N03L G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPB114N03L G?
IPB114N03L G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPB114N03L G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPB114N03L G?
For technical support, including IPB114N03L G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB114N03L G requirements.
6.How does Aetrix verify that IPB114N03L G is sourced from the original manufacturer or authorized distributors?
All IPB114N03L G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB114N03L G meets industry standards.
7.What is the process for return or replacement of IPB114N03L G?
All IPB114N03L G units undergo pre-shipment inspection (PSI). If there is an issue with IPB114N03L G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPB114N03L G part is unused and in its original packaging.
Return procedure for IPB114N03L G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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