Infineon Technologies IPB11N03LA

Overview

IPB11N03LA G from Infineon Technologies is an N-channel logic-level OptiMOS®2 power MOSFET in PG-TO263-3-2 package, rated for 25 V V_DS, 30 A continuous drain current at T_C = 100 °C, and 11.2 mΩ max R_DS(on) at V_GS = 10 V. It delivers high-frequency switching performance in DC/DC converters with 8.2–11 nC total gate charge and 6 kV/µs dv/dt rating.

For engineers reviewing the IPB11N03LA datasheet, IPB11N03LA pinout, IPB11N03LA application, or IPB11N03LA equivalent, key selection criteria include its low R_DS(on) × Q_g figure-of-merit (FOM), 175 °C junction temperature capability, JEDEC-qualified reliability, and optimized thermal resistance (R_thJC = 2.9 K/W) for high-power-density board designs.

Technical Context

This MOSFET employs a trench-based silicon process optimized for logic-level gate drive compatibility (V_GS(th) = 1.2–2.0 V typ), enabling direct interfacing with 3.3 V or 5 V microcontrollers without level-shifting. Its dynamic parameters-including C_iss = 1021–1358 pF, C_oss = 393–522 pF, and t_r = 43–64 ns-support efficient hard-switching up to several hundred kHz.

The device integrates a robust body diode with Q_rr = 10 nC (at V_R = 15 V, di_F/dt = 400 A/µs) and V_SD = 0.96–1.2 V at I_F = 30 A, making it suitable for synchronous rectification and freewheeling paths where reverse recovery behavior critically impacts efficiency.

Key Specifications

Pinout & Package

IPB11N03LA G uses the PG-TO263-3-2 surface-mount package (also known as D²PAK), featuring isolated tab for drain connection, standard 3-pin layout, and RoHS-compliant lead plating. The exposed drain pad provides low-inductance, high-current path and primary thermal conduction path to PCB copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with STL11DN3LLH6 and IRL3803PBF, IPB11N03LA offers the lowest Q_g × R_DS(on) FOM among the three, best-suited for high-frequency, thermally dense DC/DC applications where gate drive loss and junction temperature are limiting factors.

Availability

IPB11N03LA G is available at Aetrix Electronics and suitable for DC/DC converters, automotive body electronics, industrial PLC outputs, and synchronous rectifier designs requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for IPB11N03LA G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101 standards.

The OptiMOS®2 product line targets high-efficiency, high-frequency power conversion in compact form factors, emphasizing low R_DS(on), low gate charge, and robust thermal design for automotive and industrial power stages.

FAQ

What is the maximum continuous drain current for IPB11N03LA G at 100 °C case temperature?

The maximum continuous drain current is 30 A at T_C = 100 °C, limited by bondwire capacity and thermal resistance. This rating assumes proper PCB copper area (≥6 cm² drain pad) and still-air convection. At T_C = 25 °C, the same limit applies due to internal bondwire constraints-not junction temperature-per datasheet footnote 2.

Is IPB11N03LA G suitable for synchronous rectification in a 48 V to 12 V flyback converter?

Yes. With V_SD = 0.96 V at 30 A and Q_rr = 10 nC, it significantly reduces conduction and reverse recovery losses versus Schottky diodes. Its 25 V V_DS rating is sufficient for 12 V secondary-side operation with margin for leakage spikes and ringing.

Does IPB11N03LA G require a gate resistor for stability in 500 kHz switching?

A gate resistor of 2.7 Ω is used in the datasheet's switching characterization (Rev. 1.4, page 3), confirming stable operation at that value. For 500 kHz, a 2–5 Ω resistor balances switching speed, gate driver stress, and EMI; lower values may cause overshoot or shoot-through in bridge configurations.

How does the dv/dt rating of 6 kV/µs impact layout requirements?

This rating means the device resists false turn-on when subjected to rapid voltage transients across drain-source. Layout must minimize source inductance (short, wide traces), avoid floating gate nodes, and ensure solid ground return paths-especially critical in half-bridge or high-side switch configurations where dV/dt coupling is strongest.