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Infineon Technologies IPB120N03S4L03ATMA1
- Part No.:
- IPB120N03S4L03ATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IPB120N03S4L03ATMA1.pdf
- Description:
- MOSFET N-CH 30V 120A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,598
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Product details
Overview
IPB120N03S4L03ATMA1 from Infineon Technologies is an N-channel enhancement-mode automotive-qualified OptiMOS™-T2 power MOSFET in PG-TO263-3-2 package, rated for 30 V VDS, 120 A continuous drain current at TC = 25°C, and 3 mΩ max RDS(on) at VGS = 10 V. It operates up to 175°C junction temperature and is 100% avalanche tested for robustness in high-current switching applications such as automotive DC-DC converters and motor control inverters.
For engineers reviewing the IPB120N03S4L03ATMA1 datasheet, IPB120N03S4L03ATMA1 pinout, IPB120N03S4L03ATMA1 application, or IPB120N03S4L03ATMA1 equivalent, key selection criteria include its 3 mΩ on-resistance at 10 V gate drive, 1.9 K/W thermal resistance (junction-to-case), 480 A pulsed drain capability, and AEC-Q101 qualification for under-hood automotive use.
Technical Context
This device uses Infineon's OptiMOS™-T2 trench MOSFET technology optimized for low RDS(on) and fast switching with controlled gate charge (Qg = 55–72 nC) and low reverse transfer capacitance (Crss = 45–90 pF). Its 30 V breakdown voltage and 120 A continuous rating support high-efficiency synchronous rectification and half-bridge configurations in 12 V/24 V automotive systems.
The integrated body diode features 120 A continuous forward current, 0.9–1.3 V forward voltage at 100 A, and 150 nC reverse recovery charge - enabling reliable freewheeling in inductive loads without external diodes in many applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 12 V/24 V automotive battery systems and transient overvoltage tolerance. |
| RDS(on) max | 3 mΩ @ VGS = 10 V - Enables <1.5 W conduction loss at 100 A, critical for thermally constrained power stages. |
| ID cont. | 120 A @ TC = 25°C - Supports high-current motor phases and DC-DC primary switches without paralleling. |
| EAS | 75 mJ - Single-pulse avalanche energy rating ensures ruggedness against inductive switching transients. |
| RthJC | 1.9 K/W - Low junction-to-case thermal resistance enables direct heatsink mounting for efficient thermal management. |
| Qg | 55–72 nC - Gate charge range determines required driver strength and switching loss trade-off in PWM operation. |
| VGS(th) | 1.0–2.2 V - Low threshold supports 3.3 V and 5 V logic-level gate drive compatibility with standard microcontrollers. |
Pinout & Package
Package: PG-TO263-3-2 (D²PAK variant with 3 leads, exposed drain pad). Standard surface-mount power package with high thermal performance and mechanical robustness for automotive PCB assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal of N-channel MOSFET | Low-side reference node; connects to ground or current-sense shunt for feedback control. |
| Pin 2 (Gate) | Control electrode | Receives gate drive signal; requires low-impedance path to minimize switching losses and ringing. |
| Pin 3 (Drain) | Power output terminal | Connected to high-side load or bus rail; electrically and thermally tied to large copper area on PCB. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive under-hood applications including engine control, EPS, and ADAS power stages. |
| 100% avalanche tested | Each unit undergoes single-pulse avalanche stress test to ensure reliability under inductive fault conditions. |
| MSL1 reflow rating | Rated for peak reflow temperatures up to 260°C - compatible with standard lead-free SMT processes. |
| Green package | Lead-free and RoHS-compliant construction with halogen-free molding compound per JEDEC J-STD-020. |
| Integrated body diode | Optimized for low Qrr (150 nC) and fast trr (85 ns), reducing freewheeling losses in hard-switched topologies. |
Applications
| Automotive Motor Control | DC-DC Converter Primary Switch |
|---|---|
Use Scenario: High-current H-bridge driving 12 V BLDC fans or steering actuators in passenger vehicles. IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration, handling bidirectional 100+ A peak currents with fast turn-on/turn-off. Use Value: 3 mΩ RDS(on) reduces conduction loss by >30% vs. legacy 4.5 mΩ devices, lowering heatsink requirements and improving system efficiency. | Use Scenario: Primary-side synchronous rectifier in 12 V → 5 V/3.3 V buck converter for infotainment ECUs. IC Role / Device Role / Timing Role: High-side power switch operating at 200–500 kHz PWM frequency with tight dead-time control. Use Value: Low Ciss (4100–5300 pF) and Qgd (8–16 nC) enable clean switching edges and reduced driver power consumption. |
| Automotive Lighting Driver | Start-Stop System Power Switch |
Use Scenario: LED headlamp matrix driver with PWM dimming and short-circuit protection. IC Role / Device Role / Timing Role: Current-controlled switch regulating up to 8 A per channel with fast response to PWM signals. Use Value: 1.0–2.2 V gate threshold allows direct interface with 3.3 V MCU GPIOs, eliminating level-shifter components. | Use Scenario: Main battery disconnect switch in 12 V start-stop systems managing cranking surges and regenerative braking energy. IC Role / Device Role / Timing Role: High-reliability power path controller with 175°C operation and 75 mJ avalanche capability. Use Value: 100% avalanche testing ensures survival during load-dump transients and alternator field collapse events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL120N3LLH6 | 30 V, 120 A, RDS(on) = 3.2 mΩ max @ 10 V; same PG-TO263-3-2 package; lower Qg (48 nC). | Better suited for higher-frequency (>1 MHz) switching due to lower gate charge and Crss. | Select when minimizing driver loss and EMI is prioritized over absolute lowest RDS(on). |
| IRF120N04DPBF | 40 V, 120 A, RDS(on) = 3.4 mΩ max @ 10 V; TO-220AB package; not AEC-Q101 qualified. | Limited to non-automotive industrial or consumer applications due to lack of automotive qualification. | Choose only for cost-sensitive non-automotive designs where 40 V margin and through-hole assembly are acceptable. |
Compared with STL120N3LLH6 and IRF120N04DPBF, IPB120N03S4L03ATMA1 offers superior thermal robustness (175°C rating), lower RDS(on), and full AEC-Q101 compliance - making it the preferred choice for mission-critical automotive power stages requiring long-term reliability under thermal stress.
Availability
IPB120N03S4L03ATMA1 is available at Aetrix Electronics and suitable for automotive motor control, DC-DC conversion, lighting drivers, and start-stop system power switching requiring stable component supply across production lifecycles.
Supply support for IPB120N03S4L03ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.
This device belongs to the OptiMOS™-T2 product line, engineered specifically for high-current, high-efficiency automotive power conversion where low on-resistance, avalanche ruggedness, and AEC-Q101 compliance are mandatory.
FAQ
What is the maximum allowable gate-source voltage for IPB120N03S4L03ATMA1?
The absolute maximum gate-source voltage is ±16 V. Operation beyond this range risks permanent gate oxide damage. For reliable 12 V gate drive, a 15 V clamp or Zener protection is recommended; 10 V is the standard drive level for achieving specified RDS(on) and thermal performance.
Does IPB120N03S4L03ATMA1 require a gate resistor, and what value is typical?
Yes - a gate resistor is required to control dV/dt and prevent oscillation. Typical values range from 2.2 Ω to 10 Ω depending on driver capability and switching speed requirements. A 3.5 Ω resistor is used in Infineon's reference characterization (Rev. 1.1, page 3), balancing rise/fall times and gate driver stress.
Can IPB120N03S4L03ATMA1 be used in parallel configurations?
Yes - its positive temperature coefficient for RDS(on) (see Fig. 8, Rev. 1.1, page 5) enables inherent current sharing. Successful paralleling requires matched layout, symmetrical gate drive paths, and individual gate resistors to suppress oscillation between devices.
Is the drain pad electrically isolated from the package backside?
No - the drain terminal is internally connected to the exposed metal pad on the bottom of the PG-TO263-3-2 package. This pad must be soldered to a large PCB copper area serving as both electrical connection and thermal path to the heatsink or chassis ground.
IPB120N03S4L03ATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs:
- 72 nC @ 10 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 79W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-3
IPB120N03S4L03ATMA1 FAQ
1.How can I place an order for IPB120N03S4L03ATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPB120N03S4L03ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPB120N03S4L03ATMA1 reliable?
The price and inventory of IPB120N03S4L03ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB120N03S4L03ATMA1 is usually 5 days.
3.What payment methods are accepted for IPB120N03S4L03ATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB120N03S4L03ATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPB120N03S4L03ATMA1?
IPB120N03S4L03ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPB120N03S4L03ATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPB120N03S4L03ATMA1?
For technical support, including IPB120N03S4L03ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB120N03S4L03ATMA1 requirements.
6.How does Aetrix verify that IPB120N03S4L03ATMA1 is sourced from the original manufacturer or authorized distributors?
All IPB120N03S4L03ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB120N03S4L03ATMA1 meets industry standards.
7.What is the process for return or replacement of IPB120N03S4L03ATMA1?
All IPB120N03S4L03ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB120N03S4L03ATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPB120N03S4L03ATMA1 part is unused and in its original packaging.
Return procedure for IPB120N03S4L03ATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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