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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB120N04S3-02

Name: IPB120N04S3-02
Brand: Infineon Technologies
SKU: IPB120N04S3-02
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB120N04S3-02

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB120N04S3-02.pdf

Description:: MOSFET N-CH 40V 120A D2PAK

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Product details

Overview

IPB120N04S3-02 from Infineon Technologies is an N-channel enhancement-mode automotive-grade OptiMOS™-T power MOSFET in PG-TO263-3-2 package, rated for 40 V V_DS, 120 A continuous drain current at T_C = 25 °C, and ultra-low 1.35–2.0 mΩ R_DS(on) (SMD version), used in high-efficiency DC-DC converters and motor control stages of 12 V/24 V automotive systems.

For engineers reviewing the IPB120N04S3-02 datasheet, IPB120N04S3-02 pinout, IPB120N04S3-02 application, or IPB120N04S3-02 equivalent, key selection criteria include R_DS(on) at 80 A/10 V, avalanche energy rating (1880 mJ), thermal resistance (R_thJC = 0.5 K/W), AEC-Q101 qualification, and TO263-3 footprint compatibility with high-current PCB layouts.

Technical Context

This device employs trench-gate silicon technology optimized for low conduction and switching losses in high-duty-cycle automotive power stages. Its gate threshold voltage (2.1–4.0 V) ensures robust turn-on margin under battery voltage variation, while the 11,000–14,300 pF input capacitance and 470–710 pF reverse transfer capacitance support fast, controlled switching with moderate gate drive strength.

The integrated body diode exhibits 0.83–1.2 V forward voltage at 80 A and 25 °C, with 70 ns reverse recovery time and 145 nC Q_rr, enabling synchronous rectification and freewheeling in buck and half-bridge topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V/24 V automotive battery rails including load dump transients.
R_DS(on) max (SMD)	2.0 mΩ - Enables ≤2.4 W conduction loss at 80 A, critical for thermally constrained engine bay modules.
I_D continuous	120 A @ T_C = 25 °C - Supported by 0.5 K/W junction-to-case thermal path and 300 W power dissipation rating.
E_AS	1880 mJ - Single-pulse avalanche ruggedness allows reliable operation during inductive switching faults in motor drives.
Q_g total	160–210 nC - Determines gate driver current requirement (~1.5 A peak for 100 ns rise time with 1.3 Ω R_G).
t_r/t_f	19 ns / 18 ns - Fast switching enables >200 kHz operation in compact DC-DC converters with low switching loss.
V_GS(th)	2.1–4.0 V - Ensures full enhancement at ≥6 V gate drive, compatible with standard 5 V or 8 V logic-level controllers.

Pinout & Package

IPB120N04S3-02 uses the PG-TO263-3-2 surface-mount package (D²PAK), with exposed drain pad for thermal and electrical connection to PCB copper area. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives voltage-controlled signal to modulate channel conductivity; requires low-impedance drive due to 210 nC Q_g.
Pin 2 (Drain)	Main current output terminal	Internally connected to large copper tab; must be soldered to ≥6 cm² PCB copper for R_thJA = 40 K/W thermal performance.
Pin 3 (Source)	Reference node for gate drive	Serves as return path for load current and gate drive loop; layout must minimize inductance to suppress ringing.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive underhood applications up to 175 °C junction temperature and MSL1 reflow profile.
Ultra-low R_DS(on)	1.35 mΩ typ. (SMD) reduces I²R losses by >30% vs. prior-generation 40 V MOSFETs at 80 A.
100% avalanche tested	Each unit undergoes single-pulse E_AS stress test to guarantee minimum 1880 mJ ruggedness.
Green RoHS package	Halogen-free, lead-free construction compliant with automotive environmental standards and end-of-life recycling requirements.
Optimized body diode	Q_rr = 145 nC and t_rr = 70 ns enable efficient freewheeling in synchronous buck converters without shoot-through risk.

Applications

Automotive DC-DC Converter

Electric Power Steering (EPS)

Use Scenario: Step-down conversion from 12 V battery to 5 V/3.3 V for ADAS camera and radar modules.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300–500 kHz with tight duty cycle control.

Use Value: 1.35 mΩ R_DS(on) limits conduction loss to <1.5 W at 60 A, enabling passive cooling in sealed ECUs.

Use Scenario: H-bridge motor driver for 12 V brushless EPS assist motor.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional 100 A peak currents during torque assist and regenerative braking.

Use Value: 1880 mJ E_AS withstands inductive kickback during rapid PWM commutation without snubber circuits.

Start-Stop Battery Management

48 V Mild Hybrid DC-DC

Use Scenario: Load switch isolating auxiliary systems during engine cranking to prevent brownout.

IC Role / Device Role / Timing Role: High-current electronic fuse with fast overcurrent response via gate monitoring.

Use Value: 120 A continuous rating supports 1.5 kW peak loads; 0.5 K/W R_thJC enables direct heatsink mounting in compact modules.

Use Scenario: Buck converter primary switch stepping down 48 V bus to 12 V for legacy vehicle subsystems.

IC Role / Device Role / Timing Role: Main power switch operating at 100–200 kHz with 80 A RMS current.

Use Value: Low Crss (470–710 pF) minimizes Miller-induced turn-on risk during high dv/dt transitions across 48 V rail.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP120N04S3-02	Same die, PG-TO220-3-1 through-hole package; R_thJC = 0.5 K/W but higher R_thJA (62 K/W on minimal PCB).	Better suited for prototyping or low-volume assemblies where manual soldering and mechanical mounting are preferred.	Select when board-level thermal design cannot accommodate TO263 footprint or when serviceability requires replaceable through-hole component.
IPI120N04S3-02	Same die, PG-TO262-3-1 (I²PAK) package; identical R_thJC and R_DS(on), but slightly lower creepage/clearance than TO263.	Used in space-constrained industrial inverters where TO262's smaller outline fits tighter chassis clearances.	Choose when PCB real estate is limited but thermal performance matching TO263 is required, and safety spacing permits I²PAK.

Compared with IPP120N04S3-02 and IPI120N04S3-02, IPB120N04S3-02 delivers optimal thermal performance in SMD automotive designs due to its TO263-3-2 footprint enabling direct copper-area attachment, while maintaining identical silicon characteristics and AEC-Q101 compliance.

Availability

IPB120N04S3-02 is available at Aetrix Electronics and suitable for automotive power conversion, electric power steering, and start-stop battery management systems requiring stable component supply and long-term lifecycle assurance.

Supply support for IPB120N04S3-02 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

This part belongs to the OptiMOS™-T product line, engineered specifically for high-current, high-temperature automotive power stages where low R_DS(on), avalanche ruggedness, and AEC-Q101 reliability are mandatory.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The IPB120N04S3-02 is rated for continuous operation up to 175 °C junction temperature, validated per AEC-Q101 stress testing. Derating curves in the datasheet define safe I_D and P_tot limits above 25 °C case temperature, with thermal shutdown recommended if T_j exceeds 165 °C in mission-critical applications.

Does this MOSFET require a gate resistor for stability in high-frequency switching?

Yes - a gate resistor (typically 1.3 Ω, as used in characterization) is required to dampen gate-source oscillation caused by L_GS and C_iss interaction. Layout inductance must be minimized; values below 1 Ω increase risk of ringing, while >5 Ω degrades switching speed and increases switching loss unnecessarily.

Can IPB120N04S3-02 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (increasing ~0.5%/°C) enables inherently stable current sharing. For two devices, ensure matched gate drive paths, symmetrical PCB copper, and individual source resistors (10–20 mΩ) for dynamic balancing; derate total current by 15% for thermal margin.

Is the body diode suitable for synchronous rectification in a buck converter?

Yes - the body diode has characterized Q_rr (145 nC) and t_rr (70 ns), allowing controlled commutation when paired with precise gate timing. However, for >95% efficiency targets at >100 kHz, an external Schottky may still be preferred to eliminate reverse recovery loss entirely.

IPB120N04S3-02 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 230µA

Gate Charge (Qg) (Max) @ Vgs:: 210 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 14300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB120N04S3-02 FAQ

1.How can I place an order for IPB120N04S3-02 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB120N04S3-02 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB120N04S3-02 reliable?

The price and inventory of IPB120N04S3-02 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB120N04S3-02 is usually 5 days.

3.What payment methods are accepted for IPB120N04S3-02?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB120N04S3-02 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB120N04S3-02?

IPB120N04S3-02 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB120N04S3-02 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB120N04S3-02?

For technical support, including IPB120N04S3-02 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB120N04S3-02 requirements.

6.How does Aetrix verify that IPB120N04S3-02 is sourced from the original manufacturer or authorized distributors?

All IPB120N04S3-02 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB120N04S3-02 meets industry standards.

7.What is the process for return or replacement of IPB120N04S3-02?

All IPB120N04S3-02 units undergo pre-shipment inspection (PSI). If there is an issue with IPB120N04S3-02, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB120N04S3-02 part is unused and in its original packaging.

Return procedure for IPB120N04S3-02:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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