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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB120N04S404ATMA1

Name: IPB120N04S404ATMA1
Brand: Infineon Technologies
SKU: IPB120N04S404ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB120N04S404ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB120N04S404ATMA1.pdf

Description:: MOSFET N-CH 40V 120A D2PAK

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Product details

Overview

IPB120N04S404ATMA1 from Infineon Technologies is an N-channel enhancement-mode automotive-qualified OptiMOS™-T2 power MOSFET in PG-TO263-3-2 package, rated for 40 V V_DS, 3.2 mΩ max R_DS(on) at V_GS = 10 V and I_D = 100 A, 120 A continuous drain current at T_C = 25°C, and 100% single-pulse avalanche tested to 75 mJ. It serves as a high-current synchronous rectifier or low-side switch in 12 V automotive DC-DC converters.

For engineers reviewing the IPB120N04S404ATMA1 datasheet, IPB120N04S404ATMA1 pinout, IPB120N04S404ATMA1 application, or IPB120N04S404ATMA1 equivalent, key selection criteria include its AEC-Q101 qualification, 175°C junction temperature rating, 1.9 K/W R_thJC, integrated body diode with 0.9–1.3 V V_SD, and 42–55 nC total gate charge for fast switching in high-efficiency power stages.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V automotive systems. Its gate threshold voltage (2.0–4.0 V) ensures robust turn-on margin under battery voltage variation, while the 6.0 V gate plateau supports stable Miller region control during hard-switching transitions.

The device integrates a co-packaged freewheeling diode with 45 ns t_rr and 50 nC Q_rr, enabling efficient synchronous rectification in buck converters and motor drive half-bridges without external diode addition. Thermal design leverages the TO263-3-2's low 1.9 K/W junction-to-case resistance for direct heatsink mounting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V automotive battery systems including load dump transients.
R_DS(on) max	3.6 mΩ at V_GS = 10 V, I_D = 100 A - Enables ≤ 36 W conduction loss at 100 A, critical for high-current DC-DC output stages.
I_D continuous	120 A at T_C = 25°C - Supports high-power motor drivers and starter solenoid control without parallel devices.
E_AS	75 mJ - Confirmed single-pulse avalanche energy rating allows safe operation under inductive switching stress without snubbers.
Q_g total	42–55 nC - Determines gate driver power requirement and switching speed; enables <100 ns turn-off with 3.5 Ω gate resistor.
t_r/t_f	18 ns / 15 ns - Fast edge rates reduce switching losses in PWM frequencies up to 200 kHz.
V_GS(th)	2.0–4.0 V - Ensures reliable turn-on across -40°C to +125°C ambient with standard 5 V or 12 V gate drivers.
R_thJC	1.9 K/W - Allows direct thermal path to heatsink; 79 W P_tot at T_C = 25°C reflects practical board-level cooling capability.

Pinout & Package

IPB120N04S404ATMA1 uses the PG-TO263-3-2 surface-mount package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in a single-row configuration: Pin 1 (Gate), Pin 2 (Source), Pin 3 (Drain).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate control input	Receives PWM signal; requires 42–55 nC charge to fully enhance channel; sensitive to ESD (±20 V absolute max).
Pin 2 (S)	Source reference node	Serves as return path for load current and gate driver ground; must be low-inductance layout to minimize switching oscillation.
Pin 3 (D)	Drain power terminal	High-current path for main load; electrically and thermally connected to large copper area on PCB; carries full I_D and avalanche energy.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive underhood applications per stress test requirements including HTGB, HTRB, and temperature cycling.
100% avalanche tested	Each unit subjected to single-pulse I_AS = 120 A test at V_DS = 40 V, guaranteeing ruggedness in inductive load switching.
Green package (lead-free)	Meets RoHS Directive 2011/65/EU; MSL1 rated for peak reflow up to 260°C, supporting lead-free SMT assembly.
Integrated body diode	Optimized for low V_SD (0.9–1.3 V) and fast t_rr (45 ns), enabling use as synchronous rectifier without external diode.
175°C operating temperature	Enables placement near heat sources (e.g., engine bay ECUs) without derating; extends system lifetime under thermal stress.

Applications

Automotive DC-DC Converters

Electric Power Steering (EPS)

Use Scenario: High-current step-down conversion from 12 V battery to 5 V or 3.3 V for ADAS sensors and microcontrollers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter, switching at 200–500 kHz.

Use Value: 3.6 mΩ R_DS(on) reduces conduction loss by >40% vs. comparable 5 mΩ MOSFETs, improving efficiency from 92% to 94.5% at 60 A.

Use Scenario: Motor phase switching in 12 V EPS systems requiring bidirectional torque control and regenerative braking.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter bridge, handling peak currents up to 120 A during assist mode.

Use Value: 75 mJ E_AS rating absorbs flyback energy during rapid PWM shutdown, eliminating need for external clamping diodes.

Start-Stop Battery Management

Automotive Body Control Modules (BCM)

Use Scenario: High-side load switch controlling starter solenoid or HVAC compressor clutch in start-stop systems.

IC Role / Device Role / Timing Role: High-current power switch activated via microcontroller GPIO with external level-shifting gate driver.

Use Value: 120 A I_D rating supports 300 A inrush current for solenoid engagement; 175°C T_j ensures reliability during extended cranking cycles.

Use Scenario: Power distribution for lighting, window lift, and seat actuation loads in centralized BCM architecture.

IC Role / Device Role / Timing Role: Protected high-side switch replacing electromechanical relays, controlled via LIN or CAN interface.

Use Value: Integrated avalanche ruggedness eliminates external TVS protection; AEC-Q101 qualification ensures zero field failures over 15-year vehicle life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4LF8AG	40 V, 2.8 mΩ R_DS(on), 220 A I_D, same PG-TO263-3-2 package but higher gate charge (75 nC)	Better conduction loss at ultra-high current (>150 A), but slower switching due to higher Q_g	Select when minimizing conduction loss dominates over switching loss; verify gate driver capability for 75 nC.
IRF1404ZPBF	40 V, 4.7 mΩ R_DS(on), 162 A I_D, TO-220 package, non-automotive grade	Larger footprint, no AEC-Q101 or avalanche testing; lower cost for non-automotive industrial use	Acceptable only for non-automotive prototypes or cost-sensitive non-safety applications; not suitable for production vehicles.

Compared with STL220N4LF8AG and IRF1404ZPBF, IPB120N04S404ATMA1 delivers optimal balance of low R_DS(on), moderate Q_g, AEC-Q101 compliance, and proven avalanche ruggedness-making it the preferred choice for production-grade 12 V automotive power stages where reliability and thermal performance are prioritized.

Availability

IPB120N04S404ATMA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering systems, and start-stop battery management requiring stable component supply and long-term lifecycle support.

Supply support for IPB120N04S404ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™-T2 product line, engineered specifically for high-efficiency, high-reliability 12 V automotive power conversion and motor control applications demanding AEC-Q101 compliance and rugged transient performance.

FAQ

What is the maximum allowable gate-source voltage for IPB120N04S404ATMA1?

The absolute maximum gate-source voltage is ±20 V, as specified in the datasheet's "Maximum ratings" table. Operation beyond this range risks permanent gate oxide damage. For reliable switching, gate drive should be limited to 10 V for full enhancement and kept below 15 V to avoid accelerated wear under repeated stress.

Does IPB120N04S404ATMA1 require a gate resistor, and what value is recommended?

Yes-a gate resistor is required to control dV/dt and prevent oscillation. With 42–55 nC total gate charge and typical driver output impedance, a 3.5 Ω resistor yields ~100 ns turn-off delay and dV/dt < 5 V/ns, balancing switching speed and EMI. Values below 2 Ω increase ringing risk; above 10 Ω significantly raises switching losses.

Can IPB120N04S404ATMA1 be used in parallel configurations?

Yes, but only with matched devices and symmetrical PCB layout. Its positive R_DS(on) temperature coefficient (R_DS(on) increases with T_j) enables inherent current sharing. Layout must ensure identical gate and source inductance per device, and thermal coupling via shared heatsink is recommended to maintain uniform junction temperatures.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes-the integrated body diode is characterized for continuous forward current up to 120 A at T_C = 25°C and pulse current up to 480 A. Its 0.9–1.3 V forward voltage and 45 ns reverse recovery time make it viable for synchronous rectification in buck converters up to 500 kHz, provided thermal design accommodates diode conduction losses.

IPB120N04S404ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.6mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 40µA

Gate Charge (Qg) (Max) @ Vgs:: 55 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4100 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB120N04S404ATMA1 FAQ

1.How can I place an order for IPB120N04S404ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB120N04S404ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB120N04S404ATMA1 reliable?

The price and inventory of IPB120N04S404ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB120N04S404ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB120N04S404ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB120N04S404ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB120N04S404ATMA1?

IPB120N04S404ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB120N04S404ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB120N04S404ATMA1?

For technical support, including IPB120N04S404ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB120N04S404ATMA1 requirements.

6.How does Aetrix verify that IPB120N04S404ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB120N04S404ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB120N04S404ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB120N04S404ATMA1?

All IPB120N04S404ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB120N04S404ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB120N04S404ATMA1 part is unused and in its original packaging.

Return procedure for IPB120N04S404ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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